Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes
Journal article, 2016

We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist Of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobelts, visualize the processes occurring in the device under the influence of applied external voltage, and establish the limitations to the possible operational conditions.

nanostructured interlayers


nanoelectromechanical switching

sandwich device

bismuth selenide


J. Kosmaca

University of Latvia

J. Andzane

University of Latvia

M. Baitimirova

University of Latvia

Floriana Lombardi

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

D. Erts

University of Latvia

ACS Applied Materials & Interfaces

1944-8244 (ISSN) 1944-8252 (eISSN)

Vol. 8 19 12257-12262

Subject Categories

Condensed Matter Physics



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3/1/2018 1