Influence of GaAsBi capping layer on morphology of InAs quantum dots
Paper in proceedings, 2016

Author

L Wang

W Pan

X Wu

F Zhang

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

7th International Workshop on Bismuth Containing Semiconductors, Shanghai, China, July 24th-27th, 2016

Subject Categories

Physical Sciences

More information

Created

10/7/2017