Ag-catalyzed InAs nanowires grown on transferable graphite flakes
Journal article, 2016

Semiconducting nanowires grown by quasi-van-der-Waals epitaxy on graphite flakes are a new class of hybrid materials that hold promise for scalable nanostructured devices within opto-electronics. Here we report on high aspect ratio and stacking fault free Ag-seeded InAs nanowires grown on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro-needle manipulator. Besides the possibilities for fabricating novel nanostructure device designs, we show how this method is used to study the parasitic growth and bicrystal match between the graphite flake and the nanowires by transmission electron microscopy.

molecular beam epitaxy


Ag-seeded nanowire



hybrid structures


J. Meyer-Holdt

Niels Bohr Institute

Chinese Academy of Sciences

T. Kanne

Niels Bohr Institute

J. E. Sestoft

Niels Bohr Institute

A. Gejl

Niels Bohr Institute

Lunjie Zeng

Chalmers, Physics, Eva Olsson Group

E. Johnson

Technical University of Denmark (DTU)

Niels Bohr Institute

Eva Olsson

Chalmers, Physics, Eva Olsson Group

J. Nygard

Niels Bohr Institute

P. Krogstrup

Niels Bohr Institute


0957-4484 (ISSN) 1361-6528 (eISSN)

Vol. 27 36

Subject Categories

Materials Engineering

Nano Technology





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