Fabrication of nanowire growth templates by forming pinholes in SiOx on Si
Paper in proceeding, 2016

InAs nanowire growth is carried out on a thin grainy layer of SiOx on Si (111), utilizing the openings of pinholes in the SiOx layer by isotropic wet etching. SiOx layers with different thicknesses were deposited and etched down to different thicknesses, to investigate how the initial layer roughness and the etching depth influence the formation of pinholes and thereafter the NW growth.

Author

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Elham Fadaly

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

The 43rd International Symposium on Compound Semiconductor


978-1-5090-1964-9 (ISBN)

Areas of Advance

Information and Communication Technology

Materials Science

Subject Categories

Materials Engineering

Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/ICIPRM.2016.7528561

ISBN

978-1-5090-1964-9

More information

Created

10/8/2017