Driver Topologies for RF Doherty Power Amplifiers
Journal article, 2017

In this letter, class-B, embedded class-B, and Doherty driver topologies are investigated for RF Doherty Power Amplifiers (PAs). The investigation is firstly conducted theoretically and by simulations and then verified by design and implementation of the different topologies at 2.1 GHz using GaN-HEMT transistors. The results show that the highest lineup efficiency can be achieved when using a Doherty driver. Modulated measurements using the same LTE signal and the same digital per-distorter (DPD), show about 2% and 4% higher average lineup efficiency when the Doherty driver is used compared to the class-B and embedded class-B drivers, respectively.

two-stage power amplifier

Doherty power amplifier

driver amplifier

GaN-HEMT

Author

Paul Saad

Ericsson AB

Zahra Asghari

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Hossein Mashad Nemati

Ericsson AB

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 27 1 67-69

Areas of Advance

Information and Communication Technology

Subject Categories

Telecommunications

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LMWC.2016.2629977

More information

Latest update

11/19/2018