Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application
Review article, 2017

Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

surfactant

III-Sb-Bi

III-N-Bi

III-As-Bi

dilute bismide

droplet

MOCVD

MBE

III-P-Bi

Author

L Wang

Chinese Academy of Sciences

L. Y. Zhang

Chinese Academy of Sciences

L. Yue

Chinese Academy of Sciences

D. Liang

Beijing University of Posts and Telecommunications (BUPT)

X Chen

Chinese Academy of Sciences

Y. Li

Chinese Academy of Sciences

P. F. Lu

Beijing University of Posts and Telecommunications (BUPT)

J. Shao

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Crystals

20734352 (eISSN)

Vol. 7 3 Article no 63 - 63

Subject Categories

Materials Engineering

DOI

10.3390/cryst7030063

More information

Latest update

10/25/2022