1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy
Journal article, 2017
Gainnas
Recombination
Semiconductor-Lasers
laser diodes
quantum well
Gaas1-Xbix
Diodes
molecular beam epitaxy
Wavelength
Temperature-Dependence
uncooled laser
GaAsBi
Band-Gap
Author
X. Y. Wu
Technical University of Denmark (DTU)
Chinese Academy of Sciences
W. W. Pan
Chinese Academy of Sciences
Z. P. Zhang
Chinese Academy of Sciences
ShanghaiTech University
Y. Li
Chinese Academy of Sciences
C. F. Cao
Chinese Academy of Sciences
J. J. Liu
Chinese Academy of Sciences
L. Y. Zhang
Chinese Academy of Sciences
Y. X. Song
Chinese Academy of Sciences
H. Y. Ou
Technical University of Denmark (DTU)
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
ACS Photonics
2330-4022 (eISSN)
Vol. 4 6 1322-1326Subject Categories
Telecommunications
DOI
10.1021/acsphotonics.7b00240