Influence of bismuth atoms on electron g factor of InGaAs(Bi) quantum wells investigated by magneto photoluminescence
Paper in proceedings, 2017

Author

Liangqing Zhu

X Chen

yuxin song

Zhen Qi

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Jun Shao

8th International Workshop on Bismuth Containing Semiconductors, Marburg, Germany, July 23-26, 2017

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017