Application of angle-resolved XPS for characterisation of SiC/Ni2Si thin film systems
Journal article, 2006

Ultrathin nickel silicide layers (3 nm) on SiC, heat-treated at 800 and 950 °C, were analysed by means of angle-resolved X-ray photoelectron spectroscopy (ARXPS) in order to characterise the systems. The core level spectra of Si, C and Ni were correlated with the modelling of the arrangement of the surface layers. The model derived from this suggests that the silicide formed covers the SiC only in part (less than about half) and that the graphite forms a thin (<1 nm) layer on top of the whole surface. The model agrees fairly well with the relative amount of phases expected from the mass balance of the reaction between the initial Ni layer (1.2 nm) and the SiC substrate. Electronic structure was also investigated from the valence band spectra. Copyright © 2006 John Wiley & Sons, Ltd.

nickel silicide

silicon carbide

thin layers

ARXPS

Author

S. A. Perez-Garcia

Chalmers, Materials and Manufacturing Technology, Surface and Microstructure Engineering

Lars Nyborg

Chalmers, Materials and Manufacturing Technology, Surface and Microstructure Engineering

Surface and Interface Analysis

0142-2421 (ISSN) 1096-9918 (eISSN)

Vol. 38 4 859-862

Subject Categories

Manufacturing, Surface and Joining Technology

DOI

10.1002/sia.2215

More information

Created

10/7/2017