1060 nm GaAs VCSELs for Extended Reach Optical Interconnects in Data Centers
Licentiate thesis, 2018
With further improved OI performance, new hyperscale data center topologies can be realized and explored. This will lead to many more possible solutions in traffic engineering as well as for power management. 1060 nm VCSELs could open up for lane rates of 10, 25 and possibly 50 Gb/s over distances up to 2 km and help reach the Tb/s link speed aim of the Ethernet standard.
In this work we show that the 1060 nm GaAs VCSEL is a suitable light source for long-reach OIs by demonstrating its overall stable performance and capability of error-free data transmission up to 50 Gb/s back-to-back and 25 Gb/s over 1 km of MMF. These results stem from careful VCSEL design, including strained InGaAs QWs with GaAsP barriers, doped AlGaAs distributed Bragg reflectors, a short op-tical cavity and multiple oxide layers. We also show that the fabrication of such a device poses no increase in complexity and can be realized using standard processing techniques.
vertical-cavity surface-emitting laser
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
1060 nm single-mode vertical-cavity surface-emitting laser operating at 50 Gbit/s data rate
Electronics Letters,; Vol. 53(2017)p. 869-870
A. Larsson, E. Simpanen, J. S. Gustavsson, E. Haglund, E. P. Haglund, T. Lengyel, P. A. Andrekson, W. V. Sorin, S. Mathai, M. R. Tan, and S. R. Bickham. 1060 nm VCSELs for long-reach optical interconnects
Areas of Advance
Nanoscience and Nanotechnology (SO 2010-2017, EI 2018-)
Atom and Molecular Physics and Optics
Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: Technical Report MC2-389
Opponent: Nicolae Chitica, Finisar, Sweden