Novel group IV nano- and micro-structures for light sources on silicon
Paper in proceeding, 2017
We present our recent researches on novel group IV nano- and micro-structures for potential light sources on Si, including the tensile strained Ge quantum dots (QDs), GeSn thin films and microstructures, and Ge(Sn) nanowires. Tensile-strained Ge QDs were grown by SS-MBE, and photoluminescence was achieved. The GeSn thin films were demonstrated with Sn concentration above the bandgap transition critical point, and partially suspended GeSn microstructures were fabricated for relaxing the compressive strain.
Author
Y. Li
Chinese Academy of Sciences
Y. Han
Chinese Academy of Sciences
Y. X. Song
Chinese Academy of Sciences
Z. P. Zhang
ShanghaiTech University
Chinese Academy of Sciences
Z. S. Zhu
ShanghaiTech University
Chinese Academy of Sciences
Q. M. Chen
Chinese Academy of Sciences
J. J. Liu
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017; San Juan Marriott ResortSan Juan; Puerto Rico; 10 July 2017 through 12 July 2017
43-44
978-150906570-7 (ISBN)
Subject Categories
Nano Technology
DOI
10.1109/PHOSST.2017.8012642
ISBN
978-150906570-7