Novel group IV nano- and micro-structures for light sources on silicon
Paper in proceedings, 2017
We present our recent researches on novel group IV nano- and micro-structures for potential light sources on Si, including the tensile strained Ge quantum dots (QDs), GeSn thin films and microstructures, and Ge(Sn) nanowires. Tensile-strained Ge QDs were grown by SS-MBE, and photoluminescence was achieved. The GeSn thin films were demonstrated with Sn concentration above the bandgap transition critical point, and partially suspended GeSn microstructures were fabricated for relaxing the compressive strain.
Author
[Person 8c8e4f35-5e40-405a-a7a0-7c82f97d5b49 not found]
Chinese Academy of Sciences
[Person 6e58567b-a171-49cf-b540-806085a59952 not found]
Chinese Academy of Sciences
[Person 8b38ffae-df3d-4546-be3d-2b95aaa88c42 not found]
Chinese Academy of Sciences
[Person 3f9a0d0d-3e2a-4347-bb97-9f924d65748d not found]
ShanghaiTech University
Chinese Academy of Sciences
[Person bad9b37b-3489-49d8-b607-1d6ecf688b52 not found]
ShanghaiTech University
Chinese Academy of Sciences
[Person 44ec6970-06ef-406a-a536-79b6af6a427b not found]
Chinese Academy of Sciences
[Person 538593ae-7a75-4df7-ae53-ab29bc85902f not found]
Chinese Academy of Sciences
[Person 34ff7880-7fcb-4712-94e4-77094f7cdabc not found]
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017; San Juan Marriott ResortSan Juan; Puerto Rico; 10 July 2017 through 12 July 2017
43-44
Subject Categories
Nano Technology
DOI
10.1109/PHOSST.2017.8012642
ISBN
978-150906570-7