High resolution STEM investigation of interface layers in cemented carbides
Journal article, 2018

Cemented carbides with sub-micron grain size have increased the need to restrict grain growth during sintering. Commonly used inhibitors like V, Ti, and Cr have been observed to form interface layers in the interfaces between WC grains and the Co binder. Atomistic modeling has predicted the composition and thickness of the interface layers. Earlier, the interface layers have been characterized qualitatively using high resolution transmission electron microscopy (TEM). To get more information about the structure and composition of the interface layers in a Ti containing cemented carbide in this work, Z contrast imaging and spectroscopy using scanning transmission electron microscopy (STEM) have been combined. Elemental maps revealing the structure of the interface layers will be presented.

EDXS

WC

Co

SEM

Ti

STEM

Author

Arno Meingast

Sandvik

E. Coronel

Sandvik

A. Blomqvist

Sandvik

S. Norgren

Uppsala University

Sandvik

Göran Wahnström

Chalmers, Physics, Materials and Surface Theory

Martina Lattemann

Sandvik

International Journal of Refractory Metals and Hard Materials

0263-4368 (ISSN) 2213-3917 (eISSN)

Vol. 72 135-140

Subject Categories

Ceramics

Materials Chemistry

Condensed Matter Physics

DOI

10.1016/j.ijrmhm.2017.12.028

More information

Latest update

5/30/2018