Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k center dot p Model
Journal article, 2018

Optical gains of type-II InGaAs/GaAsBi quantum wells (QWs) with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent k . p Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-II QWs are a promising structure for making 1.3 mu m lasers at room temperature because they can easily be used to obtain 1.3 mu m for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain.

Author

Chang Wang

Chinese Academy of Sciences

ShanghaiTech University

Wenwu Pan

Chinese Academy of Sciences

ShanghaiTech University

Konstantin Kolokolov

Moscow State University

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Chinese Physics Letters

0256-307X (ISSN)

Vol. 35 5 057801

Subject Categories

Atom and Molecular Physics and Optics

Other Physics Topics

Condensed Matter Physics

DOI

10.1088/0256-307X/35/5/057801

More information

Latest update

9/3/2018 1