SINIS bolometer with a suspended absorber
Paper in proceeding, 2018

We have developed a Superconductor-Insulator-Normal Metal-Insulator-Superconductor (SINIS) bolometer with a suspended normal metal bridge. The suspended bridge acts as a bolometric absorber with reduced heat losses to the substrate. Such bolometers were characterized at 100-350 mK bath temperatures and electrical responsivity of over 10 9 V/W was measured by dc heating the absorber through additional contacts. Suspended bolometers were also integrated in planar twin-slot and log-periodic antennas for operation in the submillimetre-band of radiation. The measured voltage response to radiation at 300 GHz and at 100 mK bath temperature is 3∗10 8 V/W and a current response is 1.1∗10 4 A/W which corresponds to a quantum efficiency of ∼15 electrons per photon. An important feature of such suspended bolometers is the thermalization of electrons in the absorber heated by optical radiation, which in turn provides better quantum efficiency. This has been confirmed by comparison of bolometric response to dc and rf heating. We investigate the performance of direct SN traps and NIS traps with a tunnel barrier between the superconductor and normal metal trap. Increasing the volume of superconducting electrode helps to reduce overheating of superconductor. Influence of Andreev reflection and Kapitza resistance, as well as electron-phonon heat conductivity and thermal conductivity of N-wiring are estimated for such SINIS devices.

Author

Mikhail Tarasov

National Research University of Electronic Technology (MIET)

Russian Academy of Sciences

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Valerian S. Edelman

Russian Academy of Sciences

Sumedh Mahashabde

University of Oxford

M. Fominsky

National Research University of Electronic Technology (MIET)

S. Lemzyakov

Moscow Institute of Physics and Technology

Russian Academy of Sciences

Artem Chekushkin

National Research University of Electronic Technology (MIET)

Moscow Institute of Physics and Technology

R. Yusupov

National Research University of Electronic Technology (MIET)

Moscow Institute of Physics and Technology

Dag Winkler

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Avgust Yurgens

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Journal of Physics: Conference Series

17426588 (ISSN) 17426596 (eISSN)

Vol. 969 1 012088

28th International Conference on Low Temperature Physics, LT 2018
Gothenburg, Sweden,

Two dimensional materials in radiation detectors

Swedish Research Council (VR) (2014-5468), 2015-01-01 -- 2016-12-31.

Subject Categories

Energy Engineering

Other Physics Topics

Condensed Matter Physics

DOI

10.1088/1742-6596/969/1/012088

More information

Latest update

1/18/2019