Behavior of Raman modes in InPBi alloys under hydrostatic pressure
Journal article, 2019

Raman spectra of InPBi alloys with bismuth amount 0.3%-2.0% were measured under hydrostatic pressure in diamond anvil cell up to ∼4 GPa at room temperature. Two bismuth related Raman modes were identified and their evolutions under pressure were studied. The linear pressure coefficients of these two modes are determined to be 1.292 and 2.169 cm -1 /GPa, respectively. The different behaviors of these two modes under pressure suggest that they may have distinct origins. InP related Raman modes were also investigated including two InP related modes caused by Bi doping.

Author

Changcheng Zheng

Chinese Academy of Sciences

Xi'an Jiaotong-Liverpool University

Xiaohu Wang

Tsinghua University

Jiqiang Ning

Chinese Academy of Sciences

Kun Ding

Chinese Academy of Sciences

Baoquan Sun

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Chinese Academy of Sciences

S. Xu

The University of Hong Kong

AIP Advances

2158-3226 (ISSN) 21583226 (eISSN)

Vol. 9 3 035120

Subject Categories

Physiology

Other Materials Engineering

Condensed Matter Physics

DOI

10.1063/1.5085132

More information

Latest update

7/21/2019