Growth and properties of AlSbBi thin films by molecular beam epitaxy
Journal article, 2019
AlSbBi thin films with a Bi content up to 15% have been successfully grown by molecular beam epitaxy for the first time. The effect of growth temperature, Sb flux and Bi flux on Bi incorporation are systematically studied. The incorporation of small size Al atoms is proven to be beneficial to improve the stability of AlSbBi with no change of Bi content in the growth temperature range of 360–420 °C. The AlBi lattice constant is determined to be about 6.37 Å by the combination of Rutherford backscattering spectroscopy and high resolution X-ray diffraction. The new AlBi vibration modes located at 286 cm−1 and 295 cm−1 are observed and attributed to AlBi TO and LO mode, respectively, in agreement with theoretical simulations.
Molecular beam epitaxy AlSbBi Bi incorporation Raman spectra
Author
Xiaolei Zhang
ShanghaiTech University
Chinese Academy of Sciences
Yanchao Zhang
Semiconductor Materials Co., Ltd
ShanghaiTech University
L. Yue
Chinese Academy of Sciences
Hao Liang
Chinese Academy of Sciences
Chaodan Chi
Chinese Academy of Sciences
Yufeng Wu
Chinese Academy of Sciences
Xin Ou
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Chinese Academy of Sciences
Journal of Alloys and Compounds
0925-8388 (ISSN)
Vol. 801 239-242Subject Categories
Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics
DOI
10.1016/j.jallcom.2019.05.300