Nanopatterning of oxide 2-dimensional electron systems using low-temperature ion milling
Journal article, 2022

We present a 'top-down' patterning technique based on ion milling performed at low-temperature, for the realization of oxide two-dimensional electron system devices with dimensions down to 160 nm. Using electrical transport and scanning Superconducting QUantum Interference Device measurements we demonstrate that the low-temperature ion milling process does not damage the 2DES properties nor creates oxygen vacancies-related conducting paths in the STO substrate. As opposed to other procedures used to realize oxide 2DES devices, the one we propose gives lateral access to the 2DES along the in-plane directions, finally opening the way to coupling with other materials, including superconductors.

oxide field effect devices

nanodevices

oxide 2DES

Author

M. D'Antuono

University of Naples Federico II

National Research Council of Italy (CNR)

Alexei Kalaboukhov

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

R. Caruso

Brookhaven National Laboratory

National Research Council of Italy (CNR)

University of Naples Federico II

S. Wissberg

Bar-Ilan University

S. Weitz Sobelman

Bar-Ilan University

B. Kalisky

Bar-Ilan University

G. Ausanio

National Research Council of Italy (CNR)

University of Naples Federico II

M. Salluzzo

National Research Council of Italy (CNR)

D. Stornaiuolo

University of Naples Federico II

National Research Council of Italy (CNR)

Nanotechnology

0957-4484 (ISSN) 1361-6528 (eISSN)

Vol. 33 8 085301

Subject Categories

Ceramics

Materials Chemistry

Condensed Matter Physics

DOI

10.1088/1361-6528/ac385e

PubMed

34757952

More information

Latest update

12/10/2021