In situ Raman studies of single-walled carbon nanotubes grown by local
Journal article, 2008

Using in situ Raman spectroscopy we investigate single wall carbon nanotube growth on Mo electrodes, using a highly localized resistive heating technique. Small diameter semiconducting single wall nanotubes grow very rapidly when the catalyst support is heated to a temperature of 800 C. The G/D ratio shows an interesting time-dependent behaviour. It first decreases, indicating the presence of amorphous carbon and then significantly increases again after ca. 5 min growth while retaining the position and shape expected for predominantly semiconducting carbon nanotubes.

carbon nanotubes


Staffan Dittmer

University of Gothenburg

Chalmers, Applied Physics

Niklas Olofsson

University of Gothenburg

Johan Ek Weis

Andrei Gromov

Eleanor E B Campbell

University of Gothenburg

Chemical Physics Letters

0009-2614 (ISSN)

Vol. 457 206-

Subject Categories

Condensed Matter Physics



More information