Smart integration of GaN and SiC high power electronics for industrial and RF applications (SMARTPOWER)
Research Project, 2011 – 2015

For industrial motor-drive, UPS and solar inverters applications and aerospace or telecom RF applications, new emerging power semiconductor technologies, respectively SiC and GaN, have demonstrated their higher performances than the actual technologies (Si and GaAs) in terms of reduction of losses, increase of efficiency and power handling. But to increase the efficiency of the power modules and in the same time reduce their size and make them more cost effective, these SiC and GaN technologies still have to be associated with new efficient cooling and packaging solutions. The goal of SMARTPOWER is to carry out the packaging and thermal management developments required to achieve the efficient and cost-effective implementation of SiC- and GaN-based power modules respectively into industrial power inverters and RF transmitters systems. This main objective is supported in the project by two routes of research: - The developments of key enabling technologies required to the integration of the power modules into viable systems: efficient and reliable thermal interface materials and electrical interconnect, highly efficient thermoelectric modules andintegrated temperature sensor. - The development of new 3D packaging techniques and the associated thermal architectures that will allow to integrate the core chips, together with the enabling technologies, in a viable and cost effective manner. The RTD developments will be demonstrated into the realisation of two high power modules: (i) SiC-based inverter for UPS, solar and motor-drive applications (ii) GaN-based RF transmitter for aerospace and telecom applications. The SMARTPOWER consortium (15 partners from 7 European States) gathers all the competences required to achieve these objectives. It is well balanced and involves all the supply chain partners in order to anticipate the cost-effective introduction of these new technologies and future products on the market.


Johan Liu (contact)

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Murali Murugesan

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems


Berliner Nanotest und Design

Berlin, Germany

Budapest University of Technology and Economics

Budapest, Hungary

Foundation for Research and Technology Hellas (FORTH)

Heraklion, Greece

Fraunhofer-Gesellschaft Zur

Munchen, Germany

Infineon Technologies

Neubiberg, Germany

Institutul National de Cercetaredezvoltare Pentru Microtehnologie

Voluntari, Bucharest, Romania


Freiburg, Germany

Schneider Electric Industries

Rueil Malmaison, France

SHT Smart High-Tech

Göteborg, Sweden

Taipro Engineering

Liege (Angleur), Belgium

Technische Universität Chemnitz

Chemnitz, Germany

Thales Group

Neuilly Sur Seine, France

The French Alternative Energies and Atomic Energy Commission (CEA)

Gif-sur-Yvette, France


European Commission (EC)

Project ID: EC/FP7/288801
Funding Chalmers participation during 2011–2015

Related Areas of Advance and Infrastructure

Sustainable development

Driving Forces

Nanoscience and Nanotechnology

Areas of Advance


Areas of Advance

Nanofabrication Laboratory


Materials Science

Areas of Advance


More information

Latest update