Smart integration of GaN and SiC high power electronics for industrial and RF applications (SMARTPOWER)
Research Project, 2011
– 2015
For industrial motor-drive, UPS and solar inverters applications and aerospace or telecom RF applications, new emerging power semiconductor technologies, respectively SiC and GaN, have demonstrated their higher performances than the actual technologies (Si and GaAs) in terms of reduction of losses, increase of efficiency and power handling. But to increase the efficiency of the power modules and in the same time reduce their size and make them more cost effective, these SiC and GaN technologies still have to be associated with new efficient cooling and packaging solutions. The goal of SMARTPOWER is to carry out the packaging and thermal management developments required to achieve the efficient and cost-effective implementation of SiC- and GaN-based power modules respectively into industrial power inverters and RF transmitters systems. This main objective is supported in the project by two routes of research: - The developments of key enabling technologies required to the integration of the power modules into viable systems: efficient and reliable thermal interface materials and electrical interconnect, highly efficient thermoelectric modules andintegrated temperature sensor. - The development of new 3D packaging techniques and the associated thermal architectures that will allow to integrate the core chips, together with the enabling technologies, in a viable and cost effective manner. The RTD developments will be demonstrated into the realisation of two high power modules: (i) SiC-based inverter for UPS, solar and motor-drive applications (ii) GaN-based RF transmitter for aerospace and telecom applications. The SMARTPOWER consortium (15 partners from 7 European States) gathers all the competences required to achieve these objectives. It is well balanced and involves all the supply chain partners in order to anticipate the cost-effective introduction of these new technologies and future products on the market.
Participants
Johan Liu (contact)
Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems
Murali Murugesan
Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems
Collaborations
Berliner Nanotest und Design
Berlin, Germany
Budapest University of Technology and Economics
Budapest, Hungary
Foundation for Research and Technology Hellas (FORTH)
Heraklion, Greece
Fraunhofer-Gesellschaft Zur
Munchen, Germany
Infineon Technologies
Neubiberg, Germany
Institutul National de Cercetaredezvoltare Pentru Microtehnologie
Voluntari, Bucharest, Romania
Micropelt
Freiburg, Germany
SHT Smart High-Tech
Göteborg, Sweden
Schneider Electric Industries
Rueil Malmaison, France
Taipro Engineering
Liege (Angleur), Belgium
Technische Universität Chemnitz
Chemnitz, Germany
Thales Group
Neuilly Sur Seine, France
The French Alternative Energies and Atomic Energy Commission (CEA)
Gif-sur-Yvette, France
Funding
European Commission (EC)
Project ID: EC/FP7/288801
Funding Chalmers participation during 2011–2015
Related Areas of Advance and Infrastructure
Sustainable development
Driving Forces
Nanoscience and Nanotechnology
Areas of Advance
Energy
Areas of Advance
Nanofabrication Laboratory
Infrastructure
Materials Science
Areas of Advance