Bistable nanoelectromechanical devices

Journal article, 2004

The force interactions of silicon and germanium nanowires with gold electrodes were analyzed. The current voltage data showed linear behavior between gold electrode and silicon nanowires but for germanium nanowires, they were point of contact dependant. It was found that TEM-STM demonstrated bistable silicon and germanium nanowire based nanoelectromechanical programable read-only memory (NEMPROM) devices. Analysis shows that the devices exhibited low switching potential and high stability, that made them ideal low-leakage electronic devices.