Bistable nanoelectromechanical devices
Artikel i vetenskaplig tidskrift, 2004

The force interactions of silicon and germanium nanowires with gold electrodes were analyzed. The current voltage data showed linear behavior between gold electrode and silicon nanowires but for germanium nanowires, they were point of contact dependant. It was found that TEM-STM demonstrated bistable silicon and germanium nanowire based nanoelectromechanical programable read-only memory (NEMPROM) devices. Analysis shows that the devices exhibited low switching potential and high stability, that made them ideal low-leakage electronic devices.

Författare

K.J. Ziegler

University College Cork

D.M. Lyons

University College Cork

JD. Holmes

University College Cork

Donats Érts

Latvijas Universitate

B. Polyakov

Latvijas Universitate

Håkan Olin

Chalmers, Institutionen för experimentell fysik

Krister Svensson

Chalmers, Institutionen för experimentell fysik, Fasta tillståndets fysik

Eva Olsson

Chalmers, Institutionen för experimentell fysik, Mikroskopi och mikroanalys

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 84 20 4074-4076

Ämneskategorier

Annan teknik

Fysik

DOI

10.1063/1.1751622