Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?
Conference contribution, 2001

The use of molecular resonant tunneling diodes (RTDs) for use as local refresh of low-power DRAM cells has been studied. A pair of RTDs connected to the cell forms a latch that provides local refresh. This reduces the standby power of the cell, as the refresh operation is very power consuming. In this work, we compare the demands of future DRAM generations with the electrical properties of published molecules showing negative differential resistance. Simulations show that no one of the so far published molecular RTDs, other low-current RTDs made in SiGe, or III-V-materials fulfill these requirements. The simulations show that the focus of molecule development should be to find molecules with resonance for lower applied voltages and with lower current levels in general. The issues of maximum tolerable series resistance in the connection between the molecules and the silicon, and the maximum tolerable fluctuations in the number of attached molecules are also addressed.


Jonas Berg

Department of Microelectronics, Solid State Electronics

Stefan Bengtsson

Department of Microelectronics, Solid State Electronics

Per Lundgren

Department of Microelectronics, Solid State Electronics

7th MELARI/NID workshop

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

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