Stefan Bengtsson

Carbon-based nanoelectromechanical devices

2011

Vertically aligned carbon based varactors

Wafer bonding: A retrospective

Carbon-based nanoelectromechanical devices

CMOS considerations in nanoelectromechanical carbon nanotube-based switches

CMOS considerations in nanoelectromechanical carbon nanotube-based switches

Planar double-gate SOI MOS devices: Fabrication by wafer bonding over pre-patterned cavities and electrical characterization

Fabrication of individual, vertically aligned carbon nanofibres on metal substrates from prefabricated catalyst dots

Sensors and actuators based on SOI materials

Monolayers and nanoparticles on nickel silicide for molecular electronics

Semiconductor Wafer Bonding: Science, Technology and Applications. The Electrochemical Society Proceedings Series.

Growth of Individual Vertically Aligned Nanotubes/Nanofibers with Small Diameter by PECVD on Different Metal Underlayers

Applications of SOI materials to quantum devices and Microsystems

Low-frequency noise in silicon nanogaps

Electrical Properties of Si-SiO2-Si Nanogaps

Wafer bonding for MEMS

Plasma-enhanced chemical vapour deposition growth of carbon nanotubes on different metal underlayers

High-power SOI vertical DMOS transistors with lateral drain contacts: Process developments, characterization, and modeling

Selective growth of individual multiwalled carbon nanotubes

Electrothermal simulations of high-power SOI vertical DMOS transistors with lateral drain contacts under unclamped inductive switching test

Process optimization for SiGe pMOSFETs using low temperature oxides on ultra-thin cap layers

Wafer bonding: A flexible way to manufacture SOI materials for high performance applications

A study on integration of molecular devices into CMOS compatible technology

Hydrophobic low temperature wafer bonding; void formation in the oxide free interface

HfO2 gate dielectrics on strained-Si and strained-SiGe layers

Semiconductor Wafer Bonding VII: Science, Technology and Applications. The Electrochemical Society Proceedings series.

Plasma assisted low temperature wafer bonding: void formation in the oxide free interface

HfO2 for strained-Si and strained-SiGe MOSFETs

Room temperature wafer bonding using oxygen plasma treatment in reactive ion etchers with and without inductively coupled plasma

Effect of Si cap layer on parasitic channel operation in Si/SiGe metal-oxide-semiconductor structures

A novel depleted semi-insulating silicon material for high frequency applications

Applications of plasma assisted wafer bonding

A silicon-oxide-silicon nanogap device structure

Analysis of CV characterisitcs of plasma bonded wafers

Unclamped inductive switching behaviour of high power SOI vertical DMOS transistors with lateral drain contacts

Electrical characterization of low thermal budget gate oxides on Si/Si0.8Ge0.2/Si substrates

ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes

ZrO2 gate dielectrics prepared by e-beam deposition of Zr and YSZ films and post annealing processes

Self heating effects of high power SOI vertical DMOS transistor with lateral drain contacts

A Si/SiO2/Si heterostructure barrier varactor diode made by wafer bonding

A silicon structure for electrical characterisation of nanoscale elements

High frequency properties of silicon-on-insulator and novel depleted silicon materials

Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor

Semiconductor nanogaps for the fabrication of molecular electronic devices

Semiconductor Wafer Bonding: Science Technology, and Applications VI

Plasma assisted room temperature bonding for MST

Formation of silicon structures by plasma activated wafer bonding

Wafer bonding using oxygen plasma treatment in RIE and ICP RIE

Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?

Analysis of the use of molecular resonant tunneling diodes for local refresh of dynamic random access memory cells

Depleted semi-insulating silicon/silicon material formed by wafer bonding

Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?

Diamond based silicon-on-insulator materials and devices

Formation of silicon structures by plasma-activated wafer bonding

Depleted semi-insulating silicon/silicon material formed by wafer bonding

Simulation of SOI MOSFETs at GHz frequencies

Room temperature wafer bonding of silicon, oxidized silicon, and crystalline quartz

n-Si/SiO2/Si heterostructure barrier varactor diode design

High frequency losses in transmission lines made on SIMOX, bulk silicon and depleted silicon/silicon structures formed by wafer bonding

Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials

Bonded Al2O3-covered Si-wafers for highly thermally conductive SOI-materials

Electroluminescence from silicon p-n junctions prepared by wafer bonding

Effect of an inhomogeneous insulating film on the capacitance of metal-insulator-semiconductor structures

Wafer bonding and smartcut for formation of silicon-on-insulator materials

Ultra-clean Si/Si interface formation by surface preparation and direct bonding in ultra-high vacuum

Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

Steady-state and transient current transport in undoped polycrystalline diamond films

Proceedings of the 1997 10th Biennial Conference on Insulating Films on Semiconductor (INFOS)

Oxygen partial pressure influence on internal oxidation of SIMOX wafers

SPFM pre-cleaning for formation of silicon interfaces by wafer bonding

Formation of directly bonded Si/Si interfaces in ultra-high vacuum

Properties of Al2O3-films deposited on silicon by atomic layer epitaxy

Internal oxidation of low dose separation by implanted oxygen wafers in different oxygen/nitrogen mixtures

Formation of directly bonded Si/Si interfaces in ultra-high vacuum

Modification of silicon surfaces with H2SO4:H2O2:HF and HNO3:HF for wafer bonding applications

Optimized cleaning processes for silicon wafer bonding

Reliability evaluation of manufacturing processes for bipolar and MOS devices on silicon-on-diamond materials

Influence of SC-1/SC-2 cleaning on wafer-bonded silicon dioxide structures

Applications of aluminium nitride films deposited by reactive sputtering to silicon-on-insulator materials

The influence of wafer dimensions on the contact wave velocity in silicon wafer bonding

Electrical properties of undoped polycrystalline diamond thin films on silicon

Evaluation of silicon device processes aimed for silicon-on-diamond material

Modification of silicon surfaces with H2SO4:H2O2:HF and HNO3:HF for wafer bonding applications

Wafer Bonding Induced Degradation Of Thermal Silicon Dioxide Layers On Silicon

The influence of surface micro-roughness on bondability

Effects of different prebonding cleaning procedures on the buried oxides of bond-and-etchback silicon-on-insulator materials

Influence Of Prebonding Cleaning On The Electrical-Properties Of The Buried Oxide Of Bond-And-Etchback Silicon-On-Insulator Materials

The Effects Of Hf Cleaning Prior To Silicon-Wafer Bonding

Characterization of thin SOI layers

Charge-Carrier Injection Into The Buried Oxide Of Wafer-Bonded Silicon-On-Insulator Materials

Low temperature oxides deposited by remote plasma enhanced CVD

Thermal and electrical instabilities in wafer bonded SiO2 layers

Silicon on aluminum nitride structures formed by wafer bonding

Characterization Of Spontaneously Bonded Hydrophobic Silicon Surfaces

Microroughness characterisation using 2D fourier transform of AFM images

Charge carrier injection into the buried oxide of wafer bonded silicon-on-insulator materials

Charge transport in polycrystalline diamond thin films on silicon

Spontaneity of hydrophobic Si-Si bonding and properties of the bonded interfaces

Photoinjection in SiO2-SiO2/Si structures formed by wafer bonding

Electrical Characterization Of Bonding Interfaces

Electrical characterization of bonding interfaces

Oxide Degradation Of Wafer Bonded Metal-Oxide Semiconductor Capacitors Following Fowler-Nordheim Electron Injection

Oxide degradation of wafer bonded MOS capacitors following Fowler-Nordheim electron injection

Charge trapping in wafer bonded structures

Semiconductor Wafer Bonding - A Review Of Interfacial Properties And Applications

Charge Trapping In Wafer Bonded Mos Structures

The Bonded Unipolar Silicon-Silicon Junction

Preparation and electrical characterization of silicon structures formed by wafer bonding

Electrical Methods For Characterizing Directly Bonded Silicon Silicon Interfaces

Charge densities at silicon interfaces prepared by wafer bonding

Low-Temperature Preparation Of Silicon Silicon Interfaces By The Silicon-To-Silicon Direct Bonding Method

Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces

Interface Charge Control Of Directly Bonded Silicon Structures

IC process compatible preparation of silicon interfaces using the silicon-to-silicon direct bonding method

Electronic-Properties Of Silicon Interfaces Prepared By Direct Bonding