CMOS considerations in nanoelectromechanical carbon nanotube-based switches
Journal article, 2008

In this paper, we focus on critical issues directly related to the viability of carbon nanotube-based nanoelectromechanical switches, to perform their intended functionality as logic and memory elements, through assessment of typical performance parameters with reference to complementary metal-oxide-semiconductor devices. A detailed analysis of performance metrics regarding threshold voltage control, static and dynamic power dissipation, speed, and integration density is presented. Apart from packaging and reliability issues, these switches seem to be competitive in low power, particularly low-standby power, logic and memory applications.

Author

Farzan Alavian Ghavanini

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Per Lundgren

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Peter Enoksson

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Stefan Bengtsson

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Nanotechnology

0957-4484 (ISSN) 1361-6528 (eISSN)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/6/2017