Low-frequency noise in silicon nanogaps
Journal article, 2005

Silicon nanogaps are contact structures for connecting organic molecules. An insulating layer is removed by etching, and this dramatically increases the current levels and the noise, which closely resembles a 1/f-law and scales with the square of the current. After etching the noise level at 30 Hz and 10 nA is in the order of 10-21 A2/Hz, which is more than two orders of magnitude larger than before etching. We model the noisy behavior by several percolation paths in parallel at the etched surface between the electrodes, and compare with soft breakdown in thin oxide.

Molecular electronics

Low-frequency noise

Silicon nanogaps

Author

Jonas Berg

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Per Lundgren

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Peter Enoksson

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Stefan Bengtsson

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 87 21 223107-

Subject Categories

Physical Sciences

DOI

10.1063/1.2135215

More information

Created

10/6/2017