Low-frequency noise in silicon nanogaps
Artikel i vetenskaplig tidskrift, 2005

Silicon nanogaps are contact structures for connecting organic molecules. An insulating layer is removed by etching, and this dramatically increases the current levels and the noise, which closely resembles a 1/f-law and scales with the square of the current. After etching the noise level at 30 Hz and 10 nA is in the order of 10-21 A2/Hz, which is more than two orders of magnitude larger than before etching. We model the noisy behavior by several percolation paths in parallel at the etched surface between the electrodes, and compare with soft breakdown in thin oxide.

Molecular electronics

Low-frequency noise

Silicon nanogaps

Författare

Jonas Berg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Per Lundgren

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Peter Enoksson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Stefan Bengtsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 87 21 223107-

Ämneskategorier

Fysik

DOI

10.1063/1.2135215