Stefan Bengtsson

Rektor vid Rektor

Stefan Bengtsson är rektor och VD för Chalmers sedan augusti 2015. Han är professor i fasta tillståndets elektronik. Stefan Bengtssons forskningsfält är mikro- och nanoelektronik, särskilt kiselbaserade material och komponenter. Han har publicerad mer än 100 arbeten i internationella tidskrifter och konferenser. Utöver anställningar vid Chalmers har han varit anställd vid Malmö högskola och varit gästprofessor vid Institute National Polytechnique i Grenoble.Stefan Bengtsson har erfarenhet från akademiskt ledarskap som rektor vi Malmö högskola (2011 – 2015), prorektor (2007-2011) och vice VD (2009-2011) vid Chalmers samt från prefektuppdrag vid Chalmers.

Källa: chalmers.se

Visar 115 publikationer

2011

Vertically aligned carbon based varactors

Farzan Alavian Ghavanini, Peter Enoksson, Stefan Bengtsson et al
Journal of Applied Physics. Vol. 110 (2)
Artikel i vetenskaplig tidskrift
2011

Carbon-based nanoelectromechanical devices

Stefan Bengtsson, Peter Enoksson, Farzan Alavian Ghavanini et al
International Journal of High Speed Electronics and Systems. Vol. 20 (1), p. 195-204
Artikel i vetenskaplig tidskrift
2010

Wafer bonding: A retrospective

Stefan Bengtsson
ECS Transactions. Vol. 33 (4), p. 429-439
Paper i proceeding
2009

Carbon-based nanoelectromechanical devices

Stefan Bengtsson, Eleanor E B Campbell, J Ek-Weis et al
Advanced workshop on Frontiers in Electronics (invited paper)
Paper i proceeding
2008

CMOS considerations in nanoelectromechanical carbon nanotube-based switches

Mahdi Yousif, Farzan Alavian Ghavanini, Per Lundgren et al
Nanotechnology. Vol. 19 (28) (285204)
Artikel i vetenskaplig tidskrift
2008

CMOS considerations in nanoelectromechanical carbon nanotube-based switches

Farzan Alavian Ghavanini, Mahdi Yousif, Per Lundgren et al
Nanotechnology
Artikel i vetenskaplig tidskrift
2007

Planar double-gate SOI MOS devices: Fabrication by wafer bonding over pre-patterned cavities and electrical characterization

T.M Chung, B Olbrechts, Ulf Södervall et al
Solid State Electronics. Vol. 51 (2), p. 231-238
Artikel i vetenskaplig tidskrift
2006

Monolayers and nanoparticles on nickel silicide for molecular electronics

E Marx, M Chisea, Malin Borg et al
Applied Physics Letters. Vol. 88 (14), p. 143107-
Artikel i vetenskaplig tidskrift
2006

Fabrication of individual, vertically aligned carbon nanofibres on metal substrates from prefabricated catalyst dots

Mohammad Kabir, Raluca Elena Morjan, Oleg Nerushev et al
Nanotechnology. Vol. 17 (3), p. 790-794
Artikel i vetenskaplig tidskrift
2006

Sensors and actuators based on SOI materials

Anke Sanz-Velasco, Alexandra Nafari, Henrik Rödjegård et al
Solid-State Electronics. Vol. 50, p. 865-876
Artikel i vetenskaplig tidskrift
2005

Growth of Individual Vertically Aligned Nanotubes/Nanofibers with Small Diameter by PECVD on Different Metal Underlayers

Mohammad Kabir, Raluca Elena Morjan, Krister Svensson et al
NSTI conference, Anaheim, California
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2005

Applications of SOI materials to quantum devices and Microsystems

Johan Piscator, Alexandra Nafari, Martin Bring et al
EUROSOI-2005
Paper i proceeding
2005

Low-frequency noise in silicon nanogaps

Jonas Berg, Per Lundgren, Peter Enoksson et al
Applied Physics Letters. Vol. 87 (21), p. 223107-
Artikel i vetenskaplig tidskrift
2005

Plasma-enhanced chemical vapour deposition growth of carbon nanotubes on different metal underlayers

Mohammad Kabir, Raluca Elena Morjan, Oleg Nerushev et al
Nanotechnology. Vol. 16 (4), p. 458-466
Artikel i vetenskaplig tidskrift
2005

Electrical Properties of Si-SiO2-Si Nanogaps

Jonas Berg, Franklin Che, Per Lundgren et al
Nanotechnology. Vol. 16 (10), p. 2197-2202
Artikel i vetenskaplig tidskrift
2005

Wafer bonding for MEMS

Peter Enoksson, Cristina Rusu, Anke Sanz-Velasco et al
Proceeding of the 9th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applic, Canadaations, Quebec City
Paper i proceeding
2005

Semiconductor Wafer Bonding: Science, Technology and Applications. The Electrochemical Society Proceedings Series.

Karl Hobart, Charles Hunt, Helmut Baumgart et al
Samlingsverk (redaktörskap)
2004

High-power SOI vertical DMOS transistors with lateral drain contacts: Process developments, characterization, and modeling

Kuntjoro Pinardi, Ulrich Heinle, Stefan Bengtsson et al
IEEE Transactions on Electron Devices. Vol. 51 (5), p. 790-796
Artikel i vetenskaplig tidskrift
2004

Selective growth of individual multiwalled carbon nanotubes

Raluca Elena Morjan, Mohammad Kabir, SangWook Lee et al
Current Applied Physics. Vol. 4 (6), p. 591-594
Artikel i vetenskaplig tidskrift
2004

Process optimization for SiGe pMOSFETs using low temperature oxides on ultra-thin cap layers

Mikael Johansson, M. Y. A. Yousif, Per Lundgren et al
Physica scripta. Topical Issues. Vol. T114, p. 97-99
Paper i proceeding
2004

Electrothermal simulations of high-power SOI vertical DMOS transistors with lateral drain contacts under unclamped inductive switching test

Kuntjoro Pinardi, Ulrich Heinle, Stefan Bengtsson et al
Solid-State Electronics. Vol. 48 (7), p. 1119-1126
Artikel i vetenskaplig tidskrift
2004

Wafer bonding: A flexible way to manufacture SOI materials for high performance applications

Stefan Bengtsson, Petra Amirfeiz, Mikael Johansson
Proc. 19th Symp. on Microelectronics Technology and Devices. Vol. 3, p. 241-
Paper i proceeding
2004

A study on integration of molecular devices into CMOS compatible technology

Jonas Berg, Mohammad Kabir, Per Lundgren et al
Physica Scripta. Vol. T114, p. 175-180
Artikel i vetenskaplig tidskrift
2003

Semiconductor Wafer Bonding VII: Science, Technology and Applications. The Electrochemical Society Proceedings series.

Stefan Bengtsson, Helmut Baumgart, Charles Hunt et al
Samlingsverk (redaktörskap)
2003

Plasma assisted low temperature wafer bonding: void formation in the oxide free interface

Petra Amirfeiz, Anke Sanz-Velasco, Stefan Bengtsson
Proceedings of the 7th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, Paris, France (2003)
Paper i proceeding
2003

Hydrophobic low temperature wafer bonding; void formation in the oxide free interface

Petra Amirfeiz, Anke Sanz-Velasco, Stefan Bengtsson
Proc. of the 7th Int. Symp. on Semiconductor Wafer Bonding. Vol. 19, p. 267-
Paper i proceeding
2003

HfO2 gate dielectrics on strained-Si and strained-SiGe layers

Mikael Johansson, Mahdi Yousif, Per Lundgren et al
Semiconductor Science And Technology. Vol. 18 (9), p. 820-826
Artikel i vetenskaplig tidskrift
2003

HfO2 for strained-Si and strained-SiGe MOSFETs

M. Y. A. Yousif, Mikael Johansson, Per Lundgren et al
ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03, p. 255-
Paper i proceeding
2003

Effect of Si cap layer on parasitic channel operation in Si/SiGe metal-oxide-semiconductor structures

Alok Sareen, Y. Wang, Ulf Södervall et al
Journal Of Applied Physics. Vol. 93 (6), p. 3545-3552
Artikel i vetenskaplig tidskrift
2003

Room temperature wafer bonding using oxygen plasma treatment in reactive ion etchers with and without inductively coupled plasma

Anke Sanz-Velasco, Petra Amirfeiz, Stefan Bengtsson et al
Journal Of The Electrochemical Society. Vol. 150 (2), p. G155-G162
Artikel i vetenskaplig tidskrift
2002

Analysis of CV characterisitcs of plasma bonded wafers

Cindy Colinge, Stefan Bengtsson, Petra Amirfeiz et al
Presented at TMS, Electronics Materials Conference, Santa Barbara, USA
Paper i proceeding
2002

Electrical characterization of low thermal budget gate oxides on Si/Si0.8Ge0.2/Si substrates

Alok Sareen, A. C. Lindgren, Per Lundgren et al
Solid-State Electronics. Vol. 46 (7), p. 991-995
Artikel i vetenskaplig tidskrift
2002

Applications of plasma assisted wafer bonding

Petra Amirfeiz, Anke Sanz-Velasco, Martin Bring et al
Proceedings of the Workshop on wafer bonding, Barcelona, Spain
Paper i proceeding
2002

Self heating effects of high power SOI vertical DMOS transistor with lateral drain contacts

Kuntjoro Pinardi, Ulrich Heinle, Stefan Bengtsson et al
Physica Scripta. Vol. T101, p. 38-41
Artikel i vetenskaplig tidskrift
2002

ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes

Mikael Johansson, M. Y. A. Yousif, Alok Sareen et al
ASDAM '02. Conference Proceedings. Fourth International Conference on Advanced Semiconductor Devices and Microsystems, p. 279-
Paper i proceeding
2002

ZrO2 gate dielectrics prepared by e-beam deposition of Zr and YSZ films and post annealing processes

Mikael Johansson, M. Y. A. Yousif, Alok Sareen et al
ESSDERC 2002. Proceedings of the 32nd European Solid-State Device Research Conference, p. 419-
Paper i proceeding
2002

A silicon-oxide-silicon nanogap device structure

Per Lundgren, Stefan Bengtsson
Proceedings of the 2002 2nd IEEE Conference on Nanotechnology (Cat. No.02TH8630), p. 201-
Paper i proceeding
2002

Unclamped inductive switching behaviour of high power SOI vertical DMOS transistors with lateral drain contacts

Kuntjoro Pinardi, Ulrich Heinle, Stefan Bengtsson et al
Solid-State Electronics. Vol. 46 (12), p. 2105-2110
Artikel i vetenskaplig tidskrift
2002

A novel depleted semi-insulating silicon material for high frequency applications

Mikael Johansson, Stefan Bengtsson
Progress in SOI Structures and Devices Operating at Extreme Conditions. Proceedings of the NATO Advanced Research Workshop, p. 333-
Paper i proceeding
2001

A silicon structure for electrical characterisation of nanoscale elements

Pier Sazio, Jonas Berg, Patrick See et al
MRS Spring Meeting 16-20 April 2001. Vol. 679E, p. B2.3-
Paper i proceeding
2001

Formation of silicon structures by plasma activated wafer bonding

Petra Amirfeiz, Stefan Bengtsson, Mats Bergh et al
Semiconductor Wafer Bonding: Science, Technology, And Applications V, Proceedings. Vol. 99, p. 29-39
Paper i proceeding
2001

A Si/SiO2/Si heterostructure barrier varactor diode made by wafer bonding

Stefan Bengtsson
Proc. 6th International Symposium on Semiconductor Wafer Bonding. The Electrochemical Society.. Vol. 2001 (27), p. 205-
Artikel i vetenskaplig tidskrift
2001

Wafer bonding using oxygen plasma treatment in RIE and ICP RIE

Anke Sanz-Velasco, Petra Amirfeiz, Stefan Bengtsson
Proc. 6th International Symposium on Semiconductor Wafer Bonding. The Electrochemical Society.. Vol. 2001 (27), p. 31-40
Artikel i vetenskaplig tidskrift
2001

Semiconductor nanogaps for the fabrication of molecular electronic devices

Neil Greenham, Pier Sazio, Patrick See et al
6th European Conference on Molecular Electronics
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2001

Semiconductor Wafer Bonding: Science Technology, and Applications VI

Helmut Baumgart, Charles Hunt, Stefan Bengtsson et al
Samlingsverk (redaktörskap)
2001

High frequency properties of silicon-on-insulator and novel depleted silicon materials

Mikael Johansson, Jonas Berg, Stefan Bengtsson
Solid-State Electronics. Vol. 45 (4), p. 567-573
Artikel i vetenskaplig tidskrift
2001

Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?

Jonas Berg, Stefan Bengtsson, Per Lundgren
7th MELARI/NID workshop
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2001

Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor

Mamor Mamor, Ying Fu, Omer Nur et al
Applied Physics A-Materials Science & Processing. Vol. 72 (5), p. 633-637
Artikel i vetenskaplig tidskrift
2001

Plasma assisted room temperature bonding for MST

Anke Weinert, Petra Amirfeiz, Stefan Bengtsson
Sensors And Actuators A-Physical. Vol. 92 (1-3), p. 214-222
Artikel i vetenskaplig tidskrift
2001

Analysis of the use of molecular resonant tunneling diodes for local refresh of dynamic random access memory cells

Jonas Berg, Stefan Bengtsson, Per Lundgren
MRS Spring Meeting. Vol. 679E, p. B1.6-
Paper i proceeding
2001

Depleted semi-insulating silicon/silicon material formed by wafer bonding

Mikael Johansson, Stefan Bengtsson
Semiconductor Wafer Bonding: Science, Technology, And Applications V, Proceedings. Vol. 99, p. 420-428
Paper i proceeding
2000

Diamond based silicon-on-insulator materials and devices

Stefan Bengtsson, Mats Bergh
Perspectives, Science And Technologies For Novel Silicon On Insulator Devices. Vol. 73, p. 97-107
Paper i proceeding
2000

Formation of silicon structures by plasma-activated wafer bonding

Petra Amirfeiz, Stefan Bengtsson, Mats Bergh et al
Journal Of The Electrochemical Society. Vol. 147 (7), p. 2693-2698
Artikel i vetenskaplig tidskrift
2000

Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?

Jonas Berg, Per Lundgren, Stefan Bengtsson
Solid-State Electronics. Vol. 44 (12), p. 2247-2252
Artikel i vetenskaplig tidskrift
2000

Depleted semi-insulating silicon/silicon material formed by wafer bonding

Mikael Johansson, Stefan Bengtsson
Journal Of Applied Physics. Vol. 88 (2), p. 1118-1123
Artikel i vetenskaplig tidskrift
2000

Simulation of SOI MOSFETs at GHz frequencies

Jonas Berg, Stefan Bengtsson, Jörgen Olsson
GHz 2000, p. 399-402
Poster (konferens)
2000

n-Si/SiO2/Si heterostructure barrier varactor diode design

Ying Fu, Mamor Mamor, Magnus Willander et al
Applied Physics Letters. Vol. 77 (1), p. 103-105
Artikel i vetenskaplig tidskrift
2000

Room temperature wafer bonding of silicon, oxidized silicon, and crystalline quartz

Stefan Bengtsson, Petra Amirfeiz
Journal Of Electronic Materials. Vol. 29 (7), p. 909-915
Artikel i vetenskaplig tidskrift
1999

Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials

Stefan Bengtsson, Mats Bergh, Anders Soderbarg et al
conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium., p. 133-
Paper i proceeding
1999

High frequency losses in transmission lines made on SIMOX, bulk silicon and depleted silicon/silicon structures formed by wafer bonding

Mikael Johansson, Mats Bergh, Stefan Bengtsson
1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345), p. 30-
Paper i proceeding
1998

Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

Karin Hermansson, Francois Grey, Stefan Bengtsson et al
Journal Of The Electrochemical Society. Vol. 145 (5), p. 1645-1649
Artikel i vetenskaplig tidskrift
1998

Electroluminescence from silicon p-n junctions prepared by wafer bonding

Einar Sveinbjörnsson, Stefan Bengtsson, J. Weber et al
Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, p. 264-
Paper i proceeding
1998

Wafer bonding and smartcut for formation of silicon-on-insulator materials

Stefan Bengtsson
International Conference on Solid-State and Integrated Circuit Technology Proceedings, p. 745-
Paper i proceeding
1998

Bonded Al2O3-covered Si-wafers for highly thermally conductive SOI-materials

Per Ericsson, Stefan Bengtsson, Jarmo Skarp et al
Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, p. 576-
Paper i proceeding
1998

Ultra-clean Si/Si interface formation by surface preparation and direct bonding in ultra-high vacuum

Karin Hermansson, Francois Grey, Stefan Bengtsson et al
Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, p. 401-
Paper i proceeding
1998

Effect of an inhomogeneous insulating film on the capacitance of metal-insulator-semiconductor structures

Anders Jauhiainen, David Westberg, Stefan Bengtsson
Journal Of Applied Physics. Vol. 84 (7), p. 3960-3965
Artikel i vetenskaplig tidskrift
1997

Steady-state and transient current transport in undoped polycrystalline diamond films

Anders Jauhiainen, Stefan Bengtsson, Olof Engström
Journal Of Applied Physics. Vol. 82 (10), p. 4966-4976
Artikel i vetenskaplig tidskrift
1997

SPFM pre-cleaning for formation of silicon interfaces by wafer bonding

Stefan Bengtsson, Karin Ljungberg
Science and Technology of Semiconductor Surface Preparation. Symposium, p. 267-
Paper i proceeding
1997

Proceedings of the 1997 10th Biennial Conference on Insulating Films on Semiconductor (INFOS)

Olof Engström, Stefan Bengtsson
Samlingsverk (redaktörskap)
1997

Oxygen partial pressure influence on internal oxidation of SIMOX wafers

Per Ericsson, Stefan Bengtsson
1997 IEEE International SOI Conference Proceedings (Cat. No.97CH36069), p. 48-
Paper i proceeding
1997

Formation of directly bonded Si/Si interfaces in ultra-high vacuum

Karin Ljungberg, Francois Grey, Stefan Bengtsson
Applied Surface Science. Vol. 117, p. 813-819
Artikel i vetenskaplig tidskrift
1997

Properties of Al2O3-films deposited on silicon by atomic layer epitaxy

Per Ericsson, Stefan Bengtsson, Jarmo Skarp
Microelectronic Engineering. Vol. 36 (1-4), p. 91-94
Artikel i vetenskaplig tidskrift
1997

Formation of directly bonded Si/Si interfaces in ultra-high vacuum

Karin Ljungberg, Francois Grey, Stefan Bengtsson
Proc 2nd International Symposium on Control of Semiconductor Interfaces. North-Holland., p. 813-
Paper i proceeding
1997

Internal oxidation of low dose separation by implanted oxygen wafers in different oxygen/nitrogen mixtures

Per Ericsson, Stefan Bengtsson
Applied Physics Letters. Vol. 71 (16), p. 2310-2312
Artikel i vetenskaplig tidskrift
1996

Modification of silicon surfaces with H2SO4:H2O2:HF and HNO3:HF for wafer bonding applications

Karin Ljungberg, Ulf Jansson, Stefan Bengtsson et al
Journal Of The Electrochemical Society. Vol. 143 (5), p. 1709-1714
Artikel i vetenskaplig tidskrift
1996

The influence of wafer dimensions on the contact wave velocity in silicon wafer bonding

Stefan Bengtsson, Karin Ljungberg, Jan Vedde
Applied Physics Letters. Vol. 69 (22), p. 3381-3383
Artikel i vetenskaplig tidskrift
1996

Optimized cleaning processes for silicon wafer bonding

Karin Ljungberg, Stefan Bengtsson
Proceedings of the Third International Symposium on Ultra Clean Processing of Silicon Surfaces. UCPSS '96, p. 123-
Paper i proceeding
1996

Electrical properties of undoped polycrystalline diamond thin films on silicon

Anders Jauhiainen, Stefan Bengtsson, Olof Engström
Diamond for Electronic Applications. Symposium, p. 331-
Paper i proceeding
1996

Applications of aluminium nitride films deposited by reactive sputtering to silicon-on-insulator materials

Stefan Bengtsson, Mats Bergh, Manolis Choumas et al
Japanese Journal Of Applied Physics Part 1-Regular Papers Short Notes & Review Papers. Vol. 35 (8), p. 4175-4181
Artikel i vetenskaplig tidskrift
1996

Reliability evaluation of manufacturing processes for bipolar and MOS devices on silicon-on-diamond materials

Bengt Edholm, Anders Soderbarg, Stefan Bengtsson
Journal Of The Electrochemical Society. Vol. 143 (4), p. 1326-1334
Artikel i vetenskaplig tidskrift
1996

Influence of SC-1/SC-2 cleaning on wafer-bonded silicon dioxide structures

Per Ericsson, Stefan Bengtsson
Journal Of The Electrochemical Society. Vol. 143 (11), p. 3722-3727
Artikel i vetenskaplig tidskrift
1995

Characterization of thin SOI layers

Stefan Bengtsson
Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications, p. 221-
Paper i proceeding
1995

Wafer Bonding Induced Degradation Of Thermal Silicon Dioxide Layers On Silicon

V. V. Afanasev, Per Ericsson, Stefan Bengtsson et al
Applied Physics Letters. Vol. 66 (13), p. 1653-1655
Artikel i vetenskaplig tidskrift
1995

The influence of surface micro-roughness on bondability

Mats Bergh, Stefan Bengtsson, Mats O. Andersson
Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications, p. 126-
Paper i proceeding
1995

Influence Of Prebonding Cleaning On The Electrical-Properties Of The Buried Oxide Of Bond-And-Etchback Silicon-On-Insulator Materials

Per Ericsson, Stefan Bengtsson, Ulf Södervall
Journal Of Applied Physics. Vol. 78 (5), p. 3472-3480
Artikel i vetenskaplig tidskrift
1995

The Effects Of Hf Cleaning Prior To Silicon-Wafer Bonding

Karin Ljungberg, Ylva Backlund, Anders Soderbarg et al
Journal Of The Electrochemical Society. Vol. 142 (4), p. 1297-1303
Artikel i vetenskaplig tidskrift
1995

Effects of different prebonding cleaning procedures on the buried oxides of bond-and-etchback silicon-on-insulator materials

Per Ericsson, Stefan Bengtsson
Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications, p. 115-
Paper i proceeding
1995

Evaluation of silicon device processes aimed for silicon-on-diamond material

Anders Soderbarg, Bengt Edholm, Stefan Bengtsson
1995 IEEE International SOI Conference Proceedings, p. 104-
Paper i proceeding
1995

Charge-Carrier Injection Into The Buried Oxide Of Wafer-Bonded Silicon-On-Insulator Materials

Stefan Bengtsson, Per Ericsson, Ulf Södervall et al
Journal Of The Electrochemical Society. Vol. 142 (8), p. 2721-2726
Artikel i vetenskaplig tidskrift
1995

Modification of silicon surfaces with H2SO4:H2O2:HF and HNO3:HF for wafer bonding applications

Karin Ljungberg, Ulf Jansson, Anders Soderbarg et al
Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications, p. 163-
Paper i proceeding
1994

Charge carrier injection into the buried oxide of wafer bonded silicon-on-insulator materials

Stefan Bengtsson, Per Ericsson, K Mitani et al
Proc. 6th International Symposium on Silicon-On-Insulator Technology and Devices. The Electrochemical Society.. Vol. 94 (11), p. 245-
Artikel i vetenskaplig tidskrift
1994

Low temperature oxides deposited by remote plasma enhanced CVD

Lars-Åke Ragnarsson, Stefan Bengtsson, Mats O. Andersson et al
Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces (UCPSS '94), p. 117-
Artikel i vetenskaplig tidskrift
1994

Silicon on aluminum nitride structures formed by wafer bonding

Stefan Bengtsson, Manolis Choumas, W. P. Maszara et al
1994 IEEE International SOI Conference Proceedings, p. 35-
Artikel i vetenskaplig tidskrift
1994

Characterization Of Spontaneously Bonded Hydrophobic Silicon Surfaces

Karin Ljungberg, Anders Soderbarg, Stefan Bengtsson et al
Journal Of The Electrochemical Society. Vol. 141 (2), p. 562-566
Artikel i vetenskaplig tidskrift
1994

Thermal and electrical instabilities in wafer bonded SiO2 layers

Per Ericsson, Stefan Bengtsson
Artikel i vetenskaplig tidskrift
1994

Microroughness characterisation using 2D fourier transform of AFM images

Mats Bergh, Mats O. Andersson, Stefan Bengtsson
Artikel i vetenskaplig tidskrift
1993

Charge transport in polycrystalline diamond thin films on silicon

Anders Jauhiainen, Stefan Bengtsson, Olof Engström et al
Proc. 3rd International Sympoisum on Diamond Materials. The Electrochemical Society.. Vol. 93 (17), p. 927-
Artikel i vetenskaplig tidskrift
1993

Spontaneity of hydrophobic Si-Si bonding and properties of the bonded interfaces

Karin Ljungberg, Anders Söderbärg, Stefan Bengtsson et al
Proc of the 2nd International Symposium on Semiconductor Wafer Bonding. The Electrochemical Society. Vol. 93 (29), p. 473-
Artikel i vetenskaplig tidskrift
1993

Photoinjection in SiO2-SiO2/Si structures formed by wafer bonding

Per Ericsson, Stefan Bengtsson
Artikel i vetenskaplig tidskrift
1992

Charge trapping in wafer bonded structures

Anders Jauhiainen, Stefan Bengtsson, Olof Engström
Proc of the 2nd European Solid State Device Research Conference. ESSDERC, p. 597-
Artikel i vetenskaplig tidskrift
1992

Oxide Degradation Of Wafer Bonded Metal-Oxide Semiconductor Capacitors Following Fowler-Nordheim Electron Injection

Stefan Bengtsson, Anders Jauhiainen, Olof Engström
Journal Of The Electrochemical Society. Vol. 139 (8), p. 2302-2306
Artikel i vetenskaplig tidskrift
1992

Oxide degradation of wafer bonded MOS capacitors following Fowler-Nordheim electron injection

Stefan Bengtsson, Anders Jauhiainen, Olof Engström
Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, p. 339-
Paper i proceeding
1992

The Bonded Unipolar Silicon-Silicon Junction

Stefan Bengtsson, G. Andersson, Mats O. Andersson et al
Journal Of Applied Physics. Vol. 72 (1), p. 124-140
Artikel i vetenskaplig tidskrift
1992

Electrical characterization of bonding interfaces

Olof Engström, Stefan Bengtsson
Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, p. 295-
Paper i proceeding
1992

Electrical Characterization Of Bonding Interfaces

Olof Engström, Stefan Bengtsson, G. Andersson et al
Journal Of The Electrochemical Society. Vol. 139 (12), p. 3638-3643
Artikel i vetenskaplig tidskrift
1992

Semiconductor Wafer Bonding - A Review Of Interfacial Properties And Applications

Stefan Bengtsson
Journal Of Electronic Materials. Vol. 21 (8), p. 841-862
Artikel i vetenskaplig tidskrift
1992

Charge Trapping In Wafer Bonded Mos Structures

Anders Jauhiainen, Stefan Bengtsson, Olof Engström
Microelectronic Engineering. Vol. 19 (1-4), p. 597-600
Artikel i vetenskaplig tidskrift
1991

Electrical Methods For Characterizing Directly Bonded Silicon Silicon Interfaces

Stefan Bengtsson, Olof Engström
Japanese Journal Of Applied Physics Part 1-Regular Papers Short Notes & Review Papers. Vol. 30 (2), p. 356-361
Artikel i vetenskaplig tidskrift
1990

Low-Temperature Preparation Of Silicon Silicon Interfaces By The Silicon-To-Silicon Direct Bonding Method

Stefan Bengtsson, Olof Engström
Journal Of The Electrochemical Society. Vol. 137 (7), p. 2297-2303
Artikel i vetenskaplig tidskrift
1990

Charge densities at silicon interfaces prepared by wafer bonding

Stefan Bengtsson, Olof Engström
1990 IEEE SOS/SOI Technology Conference., p. 77-
Artikel i vetenskaplig tidskrift
1990

Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces

Stefan Bengtsson, Olof Engström
ESSDERC 90. 20th European Solid State Device Research Conference, p. 1-
Paper i proceeding
1989

Interface Charge Control Of Directly Bonded Silicon Structures

Stefan Bengtsson, Olof Engström
Journal Of Applied Physics. Vol. 66 (3), p. 1231-1239
Artikel i vetenskaplig tidskrift
1989

IC process compatible preparation of silicon interfaces using the silicon-to-silicon direct bonding method

Stefan Bengtsson, Olof Engström
ESSDERC '89. 19th European Solid State Devices Research Conference, p. 353-
Paper i proceeding
1988

Electronic-Properties Of Silicon Interfaces Prepared By Direct Bonding

Stefan Bengtsson, Olof Engström
Journal De Physique. Vol. 49 (C-4), p. 63-66
Artikel i vetenskaplig tidskrift

Spara referenser

Om du har installerat Zotero eller Mendeley på din dator kan du direkt ta ut referenser från de publikationer du ser i listan.

Du laddar ner dessa pluginer här:
Zotero
Mendeley

Det finns inga projekt att visa.
Det kan finnas fler projekt där Stefan Bengtsson medverkar, men du måste vara inloggad som anställd på Chalmers för att kunna se dem.