Stefan Bengtsson
Rektor vid
Rektor
Stefan Bengtsson är rektor och VD för Chalmers sedan augusti 2015. Han är professor i fasta tillståndets elektronik. Stefan Bengtssons forskningsfält är mikro- och nanoelektronik, särskilt kiselbaserade material och komponenter. Han har publicerad mer än 100 arbeten i internationella tidskrifter och konferenser. Utöver anställningar vid Chalmers har han varit anställd vid Malmö högskola och varit gästprofessor vid Institute National Polytechnique i Grenoble.Stefan Bengtsson har erfarenhet från akademiskt ledarskap som rektor vi Malmö högskola (2011 – 2015), prorektor (2007-2011) och vice VD (2009-2011) vid Chalmers samt från prefektuppdrag vid Chalmers.
Källa: chalmers.se
Visar 115 publikationer
2011
Vertically aligned carbon based varactors
Farzan Alavian Ghavanini, Peter Enoksson, Stefan Bengtsson et al
Journal of Applied Physics. Vol. 110 (2)
Artikel i vetenskaplig tidskrift
2011
Carbon-based nanoelectromechanical devices
Stefan Bengtsson, Peter Enoksson, Farzan Alavian Ghavanini et al
International Journal of High Speed Electronics and Systems. Vol. 20 (1), p. 195-204
Artikel i vetenskaplig tidskrift
2010
Wafer bonding: A retrospective
Stefan Bengtsson
ECS Transactions. Vol. 33 (4), p. 429-439
Paper i proceeding
2009
Carbon-based nanoelectromechanical devices
Stefan Bengtsson, Eleanor E B Campbell, J Ek-Weis et al
Advanced workshop on Frontiers in Electronics (invited paper)
Paper i proceeding
2008
CMOS considerations in nanoelectromechanical carbon nanotube-based switches
Mahdi Yousif, Farzan Alavian Ghavanini, Per Lundgren et al
Nanotechnology. Vol. 19 (28) (285204)
Artikel i vetenskaplig tidskrift
2008
CMOS considerations in nanoelectromechanical carbon nanotube-based switches
Farzan Alavian Ghavanini, Mahdi Yousif, Per Lundgren et al
Nanotechnology
Artikel i vetenskaplig tidskrift
2007
Planar double-gate SOI MOS devices: Fabrication by wafer bonding over pre-patterned cavities and electrical characterization
T.M Chung, B Olbrechts, Ulf Södervall et al
Solid State Electronics. Vol. 51 (2), p. 231-238
Artikel i vetenskaplig tidskrift
2006
Monolayers and nanoparticles on nickel silicide for molecular electronics
E Marx, M Chisea, Malin Borg et al
Applied Physics Letters. Vol. 88 (14), p. 143107-
Artikel i vetenskaplig tidskrift
2006
Fabrication of individual, vertically aligned carbon nanofibres on metal substrates from prefabricated catalyst dots
Mohammad Kabir, Raluca Elena Morjan, Oleg Nerushev et al
Nanotechnology. Vol. 17 (3), p. 790-794
Artikel i vetenskaplig tidskrift
2006
Sensors and actuators based on SOI materials
Anke Sanz-Velasco, Alexandra Nafari, Henrik Rödjegård et al
Solid-State Electronics. Vol. 50, p. 865-876
Artikel i vetenskaplig tidskrift
2005
Growth of Individual Vertically Aligned Nanotubes/Nanofibers with Small Diameter by PECVD on Different Metal Underlayers
Mohammad Kabir, Raluca Elena Morjan, Krister Svensson et al
NSTI conference, Anaheim, California
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2005
Applications of SOI materials to quantum devices and Microsystems
Johan Piscator, Alexandra Nafari, Martin Bring et al
EUROSOI-2005
Paper i proceeding
2005
Low-frequency noise in silicon nanogaps
Jonas Berg, Per Lundgren, Peter Enoksson et al
Applied Physics Letters. Vol. 87 (21), p. 223107-
Artikel i vetenskaplig tidskrift
2005
Plasma-enhanced chemical vapour deposition growth of carbon nanotubes on different metal underlayers
Mohammad Kabir, Raluca Elena Morjan, Oleg Nerushev et al
Nanotechnology. Vol. 16 (4), p. 458-466
Artikel i vetenskaplig tidskrift
2005
Electrical Properties of Si-SiO2-Si Nanogaps
Jonas Berg, Franklin Che, Per Lundgren et al
Nanotechnology. Vol. 16 (10), p. 2197-2202
Artikel i vetenskaplig tidskrift
2005
Wafer bonding for MEMS
Peter Enoksson, Cristina Rusu, Anke Sanz-Velasco et al
Proceeding of the 9th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applic, Canadaations, Quebec City
Paper i proceeding
2005
Semiconductor Wafer Bonding: Science, Technology and Applications. The Electrochemical Society Proceedings Series.
Karl Hobart, Charles Hunt, Helmut Baumgart et al
Samlingsverk (redaktörskap)
2004
High-power SOI vertical DMOS transistors with lateral drain contacts: Process developments, characterization, and modeling
Kuntjoro Pinardi, Ulrich Heinle, Stefan Bengtsson et al
IEEE Transactions on Electron Devices. Vol. 51 (5), p. 790-796
Artikel i vetenskaplig tidskrift
2004
Selective growth of individual multiwalled carbon nanotubes
Raluca Elena Morjan, Mohammad Kabir, SangWook Lee et al
Current Applied Physics. Vol. 4 (6), p. 591-594
Artikel i vetenskaplig tidskrift
2004
Process optimization for SiGe pMOSFETs using low temperature oxides on ultra-thin cap layers
Mikael Johansson, M. Y. A. Yousif, Per Lundgren et al
Physica scripta. Topical Issues. Vol. T114, p. 97-99
Paper i proceeding
2004
Electrothermal simulations of high-power SOI vertical DMOS transistors with lateral drain contacts under unclamped inductive switching test
Kuntjoro Pinardi, Ulrich Heinle, Stefan Bengtsson et al
Solid-State Electronics. Vol. 48 (7), p. 1119-1126
Artikel i vetenskaplig tidskrift
2004
Wafer bonding: A flexible way to manufacture SOI materials for high performance applications
Stefan Bengtsson, Petra Amirfeiz, Mikael Johansson
Proc. 19th Symp. on Microelectronics Technology and Devices. Vol. 3, p. 241-
Paper i proceeding
2004
A study on integration of molecular devices into CMOS compatible technology
Jonas Berg, Mohammad Kabir, Per Lundgren et al
Physica Scripta. Vol. T114, p. 175-180
Artikel i vetenskaplig tidskrift
2003
Semiconductor Wafer Bonding VII: Science, Technology and Applications. The Electrochemical Society Proceedings series.
Stefan Bengtsson, Helmut Baumgart, Charles Hunt et al
Samlingsverk (redaktörskap)
2003
Plasma assisted low temperature wafer bonding: void formation in the oxide free interface
Petra Amirfeiz, Anke Sanz-Velasco, Stefan Bengtsson
Proceedings of the 7th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, Paris, France (2003)
Paper i proceeding
2003
Hydrophobic low temperature wafer bonding; void formation in the oxide free interface
Petra Amirfeiz, Anke Sanz-Velasco, Stefan Bengtsson
Proc. of the 7th Int. Symp. on Semiconductor Wafer Bonding. Vol. 19, p. 267-
Paper i proceeding
2003
HfO2 gate dielectrics on strained-Si and strained-SiGe layers
Mikael Johansson, Mahdi Yousif, Per Lundgren et al
Semiconductor Science And Technology. Vol. 18 (9), p. 820-826
Artikel i vetenskaplig tidskrift
2003
HfO2 for strained-Si and strained-SiGe MOSFETs
M. Y. A. Yousif, Mikael Johansson, Per Lundgren et al
ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03, p. 255-
Paper i proceeding
2003
Effect of Si cap layer on parasitic channel operation in Si/SiGe metal-oxide-semiconductor structures
Alok Sareen, Y. Wang, Ulf Södervall et al
Journal Of Applied Physics. Vol. 93 (6), p. 3545-3552
Artikel i vetenskaplig tidskrift
2003
Room temperature wafer bonding using oxygen plasma treatment in reactive ion etchers with and without inductively coupled plasma
Anke Sanz-Velasco, Petra Amirfeiz, Stefan Bengtsson et al
Journal Of The Electrochemical Society. Vol. 150 (2), p. G155-G162
Artikel i vetenskaplig tidskrift
2002
Analysis of CV characterisitcs of plasma bonded wafers
Cindy Colinge, Stefan Bengtsson, Petra Amirfeiz et al
Presented at TMS, Electronics Materials Conference, Santa Barbara, USA
Paper i proceeding
2002
Electrical characterization of low thermal budget gate oxides on Si/Si0.8Ge0.2/Si substrates
Alok Sareen, A. C. Lindgren, Per Lundgren et al
Solid-State Electronics. Vol. 46 (7), p. 991-995
Artikel i vetenskaplig tidskrift
2002
Applications of plasma assisted wafer bonding
Petra Amirfeiz, Anke Sanz-Velasco, Martin Bring et al
Proceedings of the Workshop on wafer bonding, Barcelona, Spain
Paper i proceeding
2002
Self heating effects of high power SOI vertical DMOS transistor with lateral drain contacts
Kuntjoro Pinardi, Ulrich Heinle, Stefan Bengtsson et al
Physica Scripta. Vol. T101, p. 38-41
Artikel i vetenskaplig tidskrift
2002
ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes
Mikael Johansson, M. Y. A. Yousif, Alok Sareen et al
ASDAM '02. Conference Proceedings. Fourth International Conference on Advanced Semiconductor Devices and Microsystems, p. 279-
Paper i proceeding
2002
ZrO2 gate dielectrics prepared by e-beam deposition of Zr and YSZ films and post annealing processes
Mikael Johansson, M. Y. A. Yousif, Alok Sareen et al
ESSDERC 2002. Proceedings of the 32nd European Solid-State Device Research Conference, p. 419-
Paper i proceeding
2002
A silicon-oxide-silicon nanogap device structure
Per Lundgren, Stefan Bengtsson
Proceedings of the 2002 2nd IEEE Conference on Nanotechnology (Cat. No.02TH8630), p. 201-
Paper i proceeding
2002
Unclamped inductive switching behaviour of high power SOI vertical DMOS transistors with lateral drain contacts
Kuntjoro Pinardi, Ulrich Heinle, Stefan Bengtsson et al
Solid-State Electronics. Vol. 46 (12), p. 2105-2110
Artikel i vetenskaplig tidskrift
2002
A novel depleted semi-insulating silicon material for high frequency applications
Mikael Johansson, Stefan Bengtsson
Progress in SOI Structures and Devices Operating at Extreme Conditions. Proceedings of the NATO Advanced Research Workshop, p. 333-
Paper i proceeding
2001
A silicon structure for electrical characterisation of nanoscale elements
Pier Sazio, Jonas Berg, Patrick See et al
MRS Spring Meeting 16-20 April 2001. Vol. 679E, p. B2.3-
Paper i proceeding
2001
Formation of silicon structures by plasma activated wafer bonding
Petra Amirfeiz, Stefan Bengtsson, Mats Bergh et al
Semiconductor Wafer Bonding: Science, Technology, And Applications V, Proceedings. Vol. 99, p. 29-39
Paper i proceeding
2001
A Si/SiO2/Si heterostructure barrier varactor diode made by wafer bonding
Stefan Bengtsson
Proc. 6th International Symposium on Semiconductor Wafer Bonding. The Electrochemical Society.. Vol. 2001 (27), p. 205-
Artikel i vetenskaplig tidskrift
2001
Wafer bonding using oxygen plasma treatment in RIE and ICP RIE
Anke Sanz-Velasco, Petra Amirfeiz, Stefan Bengtsson
Proc. 6th International Symposium on Semiconductor Wafer Bonding. The Electrochemical Society.. Vol. 2001 (27), p. 31-40
Artikel i vetenskaplig tidskrift
2001
Semiconductor nanogaps for the fabrication of molecular electronic devices
Neil Greenham, Pier Sazio, Patrick See et al
6th European Conference on Molecular Electronics
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2001
Semiconductor Wafer Bonding: Science Technology, and Applications VI
Helmut Baumgart, Charles Hunt, Stefan Bengtsson et al
Samlingsverk (redaktörskap)
2001
High frequency properties of silicon-on-insulator and novel depleted silicon materials
Mikael Johansson, Jonas Berg, Stefan Bengtsson
Solid-State Electronics. Vol. 45 (4), p. 567-573
Artikel i vetenskaplig tidskrift
2001
Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?
Jonas Berg, Stefan Bengtsson, Per Lundgren
7th MELARI/NID workshop
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2001
Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor
Mamor Mamor, Ying Fu, Omer Nur et al
Applied Physics A-Materials Science & Processing. Vol. 72 (5), p. 633-637
Artikel i vetenskaplig tidskrift
2001
Plasma assisted room temperature bonding for MST
Anke Weinert, Petra Amirfeiz, Stefan Bengtsson
Sensors And Actuators A-Physical. Vol. 92 (1-3), p. 214-222
Artikel i vetenskaplig tidskrift
2001
Analysis of the use of molecular resonant tunneling diodes for local refresh of dynamic random access memory cells
Jonas Berg, Stefan Bengtsson, Per Lundgren
MRS Spring Meeting. Vol. 679E, p. B1.6-
Paper i proceeding
2001
Depleted semi-insulating silicon/silicon material formed by wafer bonding
Mikael Johansson, Stefan Bengtsson
Semiconductor Wafer Bonding: Science, Technology, And Applications V, Proceedings. Vol. 99, p. 420-428
Paper i proceeding
2000
Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?
Jonas Berg, Per Lundgren, Stefan Bengtsson
Solid-State Electronics. Vol. 44 (12), p. 2247-2252
Artikel i vetenskaplig tidskrift
2000
Diamond based silicon-on-insulator materials and devices
Stefan Bengtsson, Mats Bergh
Perspectives, Science And Technologies For Novel Silicon On Insulator Devices. Vol. 73, p. 97-107
Paper i proceeding
2000
Formation of silicon structures by plasma-activated wafer bonding
Petra Amirfeiz, Stefan Bengtsson, Mats Bergh et al
Journal Of The Electrochemical Society. Vol. 147 (7), p. 2693-2698
Artikel i vetenskaplig tidskrift
2000
Depleted semi-insulating silicon/silicon material formed by wafer bonding
Mikael Johansson, Stefan Bengtsson
Journal Of Applied Physics. Vol. 88 (2), p. 1118-1123
Artikel i vetenskaplig tidskrift
2000
Simulation of SOI MOSFETs at GHz frequencies
Jonas Berg, Stefan Bengtsson, Jörgen Olsson
GHz 2000, p. 399-402
Poster (konferens)
2000
Room temperature wafer bonding of silicon, oxidized silicon, and crystalline quartz
Stefan Bengtsson, Petra Amirfeiz
Journal Of Electronic Materials. Vol. 29 (7), p. 909-915
Artikel i vetenskaplig tidskrift
2000
n-Si/SiO2/Si heterostructure barrier varactor diode design
Ying Fu, Mamor Mamor, Magnus Willander et al
Applied Physics Letters. Vol. 77 (1), p. 103-105
Artikel i vetenskaplig tidskrift
1999
Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
Stefan Bengtsson, Mats Bergh, Anders Soderbarg et al
conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium., p. 133-
Paper i proceeding
1999
High frequency losses in transmission lines made on SIMOX, bulk silicon and depleted silicon/silicon structures formed by wafer bonding
Mikael Johansson, Mats Bergh, Stefan Bengtsson
1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345), p. 30-
Paper i proceeding
1998
Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum
Karin Hermansson, Francois Grey, Stefan Bengtsson et al
Journal Of The Electrochemical Society. Vol. 145 (5), p. 1645-1649
Artikel i vetenskaplig tidskrift
1998
Electroluminescence from silicon p-n junctions prepared by wafer bonding
Einar Sveinbjörnsson, Stefan Bengtsson, J. Weber et al
Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, p. 264-
Paper i proceeding
1998
Wafer bonding and smartcut for formation of silicon-on-insulator materials
Stefan Bengtsson
International Conference on Solid-State and Integrated Circuit Technology Proceedings, p. 745-
Paper i proceeding
1998
Bonded Al2O3-covered Si-wafers for highly thermally conductive SOI-materials
Per Ericsson, Stefan Bengtsson, Jarmo Skarp et al
Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, p. 576-
Paper i proceeding
1998
Ultra-clean Si/Si interface formation by surface preparation and direct bonding in ultra-high vacuum
Karin Hermansson, Francois Grey, Stefan Bengtsson et al
Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, p. 401-
Paper i proceeding
1998
Effect of an inhomogeneous insulating film on the capacitance of metal-insulator-semiconductor structures
Anders Jauhiainen, David Westberg, Stefan Bengtsson
Journal Of Applied Physics. Vol. 84 (7), p. 3960-3965
Artikel i vetenskaplig tidskrift
1997
Steady-state and transient current transport in undoped polycrystalline diamond films
Anders Jauhiainen, Stefan Bengtsson, Olof Engström
Journal Of Applied Physics. Vol. 82 (10), p. 4966-4976
Artikel i vetenskaplig tidskrift
1997
SPFM pre-cleaning for formation of silicon interfaces by wafer bonding
Stefan Bengtsson, Karin Ljungberg
Science and Technology of Semiconductor Surface Preparation. Symposium, p. 267-
Paper i proceeding
1997
Proceedings of the 1997 10th Biennial Conference on Insulating Films on Semiconductor (INFOS)
Olof Engström, Stefan Bengtsson
Samlingsverk (redaktörskap)
1997
Oxygen partial pressure influence on internal oxidation of SIMOX wafers
Per Ericsson, Stefan Bengtsson
1997 IEEE International SOI Conference Proceedings (Cat. No.97CH36069), p. 48-
Paper i proceeding
1997
Formation of directly bonded Si/Si interfaces in ultra-high vacuum
Karin Ljungberg, Francois Grey, Stefan Bengtsson
Applied Surface Science. Vol. 117, p. 813-819
Artikel i vetenskaplig tidskrift
1997
Properties of Al2O3-films deposited on silicon by atomic layer epitaxy
Per Ericsson, Stefan Bengtsson, Jarmo Skarp
Microelectronic Engineering. Vol. 36 (1-4), p. 91-94
Artikel i vetenskaplig tidskrift
1997
Formation of directly bonded Si/Si interfaces in ultra-high vacuum
Karin Ljungberg, Francois Grey, Stefan Bengtsson
Proc 2nd International Symposium on Control of Semiconductor Interfaces. North-Holland., p. 813-
Paper i proceeding
1997
Internal oxidation of low dose separation by implanted oxygen wafers in different oxygen/nitrogen mixtures
Per Ericsson, Stefan Bengtsson
Applied Physics Letters. Vol. 71 (16), p. 2310-2312
Artikel i vetenskaplig tidskrift
1996
Modification of silicon surfaces with H2SO4:H2O2:HF and HNO3:HF for wafer bonding applications
Karin Ljungberg, Ulf Jansson, Stefan Bengtsson et al
Journal Of The Electrochemical Society. Vol. 143 (5), p. 1709-1714
Artikel i vetenskaplig tidskrift
1996
The influence of wafer dimensions on the contact wave velocity in silicon wafer bonding
Stefan Bengtsson, Karin Ljungberg, Jan Vedde
Applied Physics Letters. Vol. 69 (22), p. 3381-3383
Artikel i vetenskaplig tidskrift
1996
Optimized cleaning processes for silicon wafer bonding
Karin Ljungberg, Stefan Bengtsson
Proceedings of the Third International Symposium on Ultra Clean Processing of Silicon Surfaces. UCPSS '96, p. 123-
Paper i proceeding
1996
Electrical properties of undoped polycrystalline diamond thin films on silicon
Anders Jauhiainen, Stefan Bengtsson, Olof Engström
Diamond for Electronic Applications. Symposium, p. 331-
Paper i proceeding
1996
Reliability evaluation of manufacturing processes for bipolar and MOS devices on silicon-on-diamond materials
Bengt Edholm, Anders Soderbarg, Stefan Bengtsson
Journal Of The Electrochemical Society. Vol. 143 (4), p. 1326-1334
Artikel i vetenskaplig tidskrift
1996
Applications of aluminium nitride films deposited by reactive sputtering to silicon-on-insulator materials
Stefan Bengtsson, Mats Bergh, Manolis Choumas et al
Japanese Journal Of Applied Physics Part 1-Regular Papers Short Notes & Review Papers. Vol. 35 (8), p. 4175-4181
Artikel i vetenskaplig tidskrift
1996
Influence of SC-1/SC-2 cleaning on wafer-bonded silicon dioxide structures
Per Ericsson, Stefan Bengtsson
Journal Of The Electrochemical Society. Vol. 143 (11), p. 3722-3727
Artikel i vetenskaplig tidskrift
1995
Characterization of thin SOI layers
Stefan Bengtsson
Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications, p. 221-
Paper i proceeding
1995
Wafer Bonding Induced Degradation Of Thermal Silicon Dioxide Layers On Silicon
V. V. Afanasev, Per Ericsson, Stefan Bengtsson et al
Applied Physics Letters. Vol. 66 (13), p. 1653-1655
Artikel i vetenskaplig tidskrift
1995
The influence of surface micro-roughness on bondability
Mats Bergh, Stefan Bengtsson, Mats O. Andersson
Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications, p. 126-
Paper i proceeding
1995
Influence Of Prebonding Cleaning On The Electrical-Properties Of The Buried Oxide Of Bond-And-Etchback Silicon-On-Insulator Materials
Per Ericsson, Stefan Bengtsson, Ulf Södervall
Journal Of Applied Physics. Vol. 78 (5), p. 3472-3480
Artikel i vetenskaplig tidskrift
1995
The Effects Of Hf Cleaning Prior To Silicon-Wafer Bonding
Karin Ljungberg, Ylva Backlund, Anders Soderbarg et al
Journal Of The Electrochemical Society. Vol. 142 (4), p. 1297-1303
Artikel i vetenskaplig tidskrift
1995
Effects of different prebonding cleaning procedures on the buried oxides of bond-and-etchback silicon-on-insulator materials
Per Ericsson, Stefan Bengtsson
Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications, p. 115-
Paper i proceeding
1995
Evaluation of silicon device processes aimed for silicon-on-diamond material
Anders Soderbarg, Bengt Edholm, Stefan Bengtsson
1995 IEEE International SOI Conference Proceedings, p. 104-
Paper i proceeding
1995
Charge-Carrier Injection Into The Buried Oxide Of Wafer-Bonded Silicon-On-Insulator Materials
Stefan Bengtsson, Per Ericsson, Ulf Södervall et al
Journal Of The Electrochemical Society. Vol. 142 (8), p. 2721-2726
Artikel i vetenskaplig tidskrift
1995
Modification of silicon surfaces with H2SO4:H2O2:HF and HNO3:HF for wafer bonding applications
Karin Ljungberg, Ulf Jansson, Anders Soderbarg et al
Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications, p. 163-
Paper i proceeding
1994
Charge carrier injection into the buried oxide of wafer bonded silicon-on-insulator materials
Stefan Bengtsson, Per Ericsson, K Mitani et al
Proc. 6th International Symposium on Silicon-On-Insulator Technology and Devices. The Electrochemical Society.. Vol. 94 (11), p. 245-
Artikel i vetenskaplig tidskrift
1994
Low temperature oxides deposited by remote plasma enhanced CVD
Lars-Åke Ragnarsson, Stefan Bengtsson, Mats O. Andersson et al
Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces (UCPSS '94), p. 117-
Artikel i vetenskaplig tidskrift
1994
Silicon on aluminum nitride structures formed by wafer bonding
Stefan Bengtsson, Manolis Choumas, W. P. Maszara et al
1994 IEEE International SOI Conference Proceedings, p. 35-
Artikel i vetenskaplig tidskrift
1994
Characterization Of Spontaneously Bonded Hydrophobic Silicon Surfaces
Karin Ljungberg, Anders Soderbarg, Stefan Bengtsson et al
Journal Of The Electrochemical Society. Vol. 141 (2), p. 562-566
Artikel i vetenskaplig tidskrift
1994
Thermal and electrical instabilities in wafer bonded SiO2 layers
Per Ericsson, Stefan Bengtsson
Proc. 25th IEEE Semiconductor Interface Specialists Conference. IEEE
Artikel i vetenskaplig tidskrift
1994
Microroughness characterisation using 2D fourier transform of AFM images
Mats Bergh, Mats O. Andersson, Stefan Bengtsson
Proc. 25th IEEE Semiconductor Interface Specialists Conference. IEEE.
Artikel i vetenskaplig tidskrift
1993
Charge transport in polycrystalline diamond thin films on silicon
Anders Jauhiainen, Stefan Bengtsson, Olof Engström et al
Proc. 3rd International Sympoisum on Diamond Materials. The Electrochemical Society.. Vol. 93 (17), p. 927-
Artikel i vetenskaplig tidskrift
1993
Spontaneity of hydrophobic Si-Si bonding and properties of the bonded interfaces
Karin Ljungberg, Anders Söderbärg, Stefan Bengtsson et al
Proc of the 2nd International Symposium on Semiconductor Wafer Bonding. The Electrochemical Society. Vol. 93 (29), p. 473-
Artikel i vetenskaplig tidskrift
1993
Photoinjection in SiO2-SiO2/Si structures formed by wafer bonding
Per Ericsson, Stefan Bengtsson
Proc. 24th IEEE Semiconductor Interface Specialists Conference. IEEE.
Artikel i vetenskaplig tidskrift
1992
Charge trapping in wafer bonded structures
Anders Jauhiainen, Stefan Bengtsson, Olof Engström
Proc of the 2nd European Solid State Device Research Conference. ESSDERC, p. 597-
Artikel i vetenskaplig tidskrift
1992
Oxide Degradation Of Wafer Bonded Metal-Oxide Semiconductor Capacitors Following Fowler-Nordheim Electron Injection
Stefan Bengtsson, Anders Jauhiainen, Olof Engström
Journal Of The Electrochemical Society. Vol. 139 (8), p. 2302-2306
Artikel i vetenskaplig tidskrift
1992
Oxide degradation of wafer bonded MOS capacitors following Fowler-Nordheim electron injection
Stefan Bengtsson, Anders Jauhiainen, Olof Engström
Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, p. 339-
Paper i proceeding
1992
The Bonded Unipolar Silicon-Silicon Junction
Stefan Bengtsson, G. Andersson, Mats O. Andersson et al
Journal Of Applied Physics. Vol. 72 (1), p. 124-140
Artikel i vetenskaplig tidskrift
1992
Electrical characterization of bonding interfaces
Olof Engström, Stefan Bengtsson
Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, p. 295-
Paper i proceeding
1992
Electrical Characterization Of Bonding Interfaces
Olof Engström, Stefan Bengtsson, G. Andersson et al
Journal Of The Electrochemical Society. Vol. 139 (12), p. 3638-3643
Artikel i vetenskaplig tidskrift
1992
Semiconductor Wafer Bonding - A Review Of Interfacial Properties And Applications
Stefan Bengtsson
Journal Of Electronic Materials. Vol. 21 (8), p. 841-862
Artikel i vetenskaplig tidskrift
1992
Charge Trapping In Wafer Bonded Mos Structures
Anders Jauhiainen, Stefan Bengtsson, Olof Engström
Microelectronic Engineering. Vol. 19 (1-4), p. 597-600
Artikel i vetenskaplig tidskrift
1991
Preparation and electrical characterization of silicon structures formed by wafer bonding
Stefan Bengtsson
Doktorsavhandling
1991
Electrical Methods For Characterizing Directly Bonded Silicon Silicon Interfaces
Stefan Bengtsson, Olof Engström
Japanese Journal Of Applied Physics Part 1-Regular Papers Short Notes & Review Papers. Vol. 30 (2), p. 356-361
Artikel i vetenskaplig tidskrift
1990
Low-Temperature Preparation Of Silicon Silicon Interfaces By The Silicon-To-Silicon Direct Bonding Method
Stefan Bengtsson, Olof Engström
Journal Of The Electrochemical Society. Vol. 137 (7), p. 2297-2303
Artikel i vetenskaplig tidskrift
1990
Charge densities at silicon interfaces prepared by wafer bonding
Stefan Bengtsson, Olof Engström
1990 IEEE SOS/SOI Technology Conference., p. 77-
Artikel i vetenskaplig tidskrift
1990
Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces
Stefan Bengtsson, Olof Engström
ESSDERC 90. 20th European Solid State Device Research Conference, p. 1-
Paper i proceeding
1989
Interface Charge Control Of Directly Bonded Silicon Structures
Stefan Bengtsson, Olof Engström
Journal Of Applied Physics. Vol. 66 (3), p. 1231-1239
Artikel i vetenskaplig tidskrift
1989
IC process compatible preparation of silicon interfaces using the silicon-to-silicon direct bonding method
Stefan Bengtsson, Olof Engström
ESSDERC '89. 19th European Solid State Devices Research Conference, p. 353-
Paper i proceeding
1988
Electronic-Properties Of Silicon Interfaces Prepared By Direct Bonding
Stefan Bengtsson, Olof Engström
Journal De Physique. Vol. 49 (C-4), p. 63-66
Artikel i vetenskaplig tidskrift
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