Simulation of SOI MOSFETs at GHz frequencies
Poster (konferens), 2000
Silicon-on-Insulator (SOI) technology shows advantages over bulk silicon technology at high frequencies. In this work, the performance of SOI MOSFETs has been simulated at GHz frequencies for SOI materials of different substrate resistivities using the device simulator Atlas. The transistors with an effective channel length of 0.24 µm were assumed to be made in a fully depleted SOI material consisting of a 30 nm silicon film on top of 100 nm buried silicon dioxide on top of a silicon substrate. The substrate resistivity was varied from 0.01 Ohmcm to 10 kOhmcm. The simulated transistors had a maximum oscillation frequency (fmax) of approximately 62 GHz. It was found that the high frequency properties of intrinsic transistors were independent of the substrate resistivity, but a system consisting of both active and passive components showed reduced fmax and fT for low substrate resistivity.