Analysis of the use of molecular resonant tunneling diodes for local refresh of dynamic random access memory cells
Paper i proceeding, 2001
Simulations have been made to analyze the use of molecular resonant tunneling diodes for local refresh of DRAM (Dynamic Random Access Memory) cells. Local refresh can be provided by a latch consisting of a pair of resonant tunneling diodes connected to the storage capacitor of the cell. Such a solution would significantly reduce the standby power consumption of the DRAM cell. We have compared the requirements on the resonant tunneling diodes for proper refresh operation with the electrical properties of published molecules with resonant IV-curves. The simulations show that no molecules with resonant electrical properties published so far in the literature have properties making them useful for this particular application. This is true also for low temperature operation. The issues of maximum tolerable series resistance and of maximum tolerable fluctuations in the number of attached molecules have also been addressed. Our results show that the focus for development of molecules with resonant electrical properties should be to find molecules with resonance for lower applied voltages and lower current levels than the molecules published so far. If the synthesis of new molecules with attractive properties is successful the merging of silicon technology and molecular electronics, for instance for new generations of DRAM cells, is a realistic future path of microelectronics.