High frequency losses in transmission lines made on SIMOX, bulk silicon and depleted silicon/silicon structures formed by wafer bonding
Paper i proceeding, 1999
Wafer bonding and etch-back has been used to manufacture a silicon material intended as substrate for high frequency applications. The space charge region surrounding the bonded silicon/silicon interface depletes the silicon, thereby causing semi-insulating behaviour at high frequencies. The formed material was characterized using measurements on metal transmission lines and the results were compared to similar measurements on SIMOX and bulk silicon wafers
SIMOX
interface structure
elemental semiconductors
high-frequency transmission lines
etching
space charge
integrated circuit measurement
microwave integrated circuits
integrated circuit interconnections
integrated circuit metallisation
interface states
silicon
wafer bonding
Författare
Mikael Johansson
Institutionen för mikroelektronik, Fasta tillståndets elektronik
Mats Bergh
Institutionen för mikroelektronik, Fasta tillståndets elektronik
Stefan Bengtsson
Institutionen för mikroelektronik, Fasta tillståndets elektronik
1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)
30-
Ämneskategorier
Annan elektroteknik och elektronik
DOI
10.1109/SOI.1999.819843