High frequency losses in transmission lines made on SIMOX, bulk silicon and depleted silicon/silicon structures formed by wafer bonding
Paper i proceeding, 1999

Wafer bonding and etch-back has been used to manufacture a silicon material intended as substrate for high frequency applications. The space charge region surrounding the bonded silicon/silicon interface depletes the silicon, thereby causing semi-insulating behaviour at high frequencies. The formed material was characterized using measurements on metal transmission lines and the results were compared to similar measurements on SIMOX and bulk silicon wafers

SIMOX

interface structure

elemental semiconductors

high-frequency transmission lines

etching

space charge

integrated circuit measurement

microwave integrated circuits

integrated circuit interconnections

integrated circuit metallisation

interface states

silicon

wafer bonding

Författare

Mikael Johansson

Institutionen för mikroelektronik, Fasta tillståndets elektronik

Mats Bergh

Institutionen för mikroelektronik, Fasta tillståndets elektronik

Stefan Bengtsson

Institutionen för mikroelektronik, Fasta tillståndets elektronik

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)

30-

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/SOI.1999.819843