Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces
Paper i proceeding, 1990

Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs. applied voltage

elemental semiconductors

interface electron states

semiconductor junctions

bonds (chemical)

silicon

Författare

Stefan Bengtsson

Institutionen för fasta tillståndets elektronik

Olof Engström

Institutionen för fasta tillståndets elektronik

ESSDERC 90. 20th European Solid State Device Research Conference

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Ämneskategorier

Annan elektroteknik och elektronik