Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces
Paper i proceeding, 1990
Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs. applied voltage
elemental semiconductors
interface electron states
semiconductor junctions
bonds (chemical)
silicon
Författare
Stefan Bengtsson
Institutionen för fasta tillståndets elektronik
Olof Engström
Institutionen för fasta tillståndets elektronik
ESSDERC 90. 20th European Solid State Device Research Conference
1-
Ämneskategorier
Annan elektroteknik och elektronik