Olof Engström

Professor vid Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Visar 130 publikationer

2017

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Marlene Bonmann, Andrei Vorobiev, Jan Stake et al
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. Vol. 35 (1), p. 01A115-
Artikel i vetenskaplig tidskrift
2017

Properties of Metal/High-k Oxide/Graphene Structures

Olof Engström, M. C. Lemme, Omid Habibpour
ECS Transactions. Vol. 80 (1), p. 157-176
Paper i proceeding
2014

Internal photoemission technique for high-k oxide/semiconductor band offset determination: The influence of semiconductor bulk properties

Olof Engström, H. M. Przewlocki, I.Z. Mitrovic et al
44th European Solid-State Device Research Conference, ESSDERC 2014, Palazzo del CasinoVenezia Lido, Italy, 22-26 September 2014, p. 369-372
Paper i proceeding
2014

The MOS System

Olof Engström
, p. 1-355
Bok
2013

Analysis of electron capture at oxide traps by electric field injection

Olof Engström, N. Sedghi, I. Z. Mitrovic et al
Applied Physics Letters. Vol. 102 (21)
Artikel i vetenskaplig tidskrift
2013

Compensation effects at electron traps in semiconductors

Olof Engström
Monatshefte für Chemie. Vol. 144 (1), p. 73-82
Artikel i vetenskaplig tidskrift
2013

Charge carrier traffic at self-assembled Ge quantum dots on Si

M Kaniewska, Olof Engström, A Karmous et al
Solid-State Electronics. Vol. 83, p. 99-
Artikel i vetenskaplig tidskrift
2013

Response to "Comment on a model for internal photoemission at high-k oxide silicon energy barriers, J. Appl. Phys. 112, 064115 (2012)"

Olof Engström
Journal of Applied Physics. Vol. 113 (16), p. 166102-
Artikel i vetenskaplig tidskrift
2012

Charge carrier traffic at self-assembled Ge quantum dots on Si

M. Kaniewska, Olof Engström, A. Karmous et al
6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, 4-6 June 2012, p. 70-71
Paper i proceeding
2012

A model for internal photoemission at high-k oxide/silicon energy barriers

Olof Engström
Journal of Applied Physics. Vol. 112 (6)
Artikel i vetenskaplig tidskrift
2012

Admittance spectroscopy of Si/LaLuO3 and Si/GdSiO MOS Structures (Invited)

F. Ducroquet, Olof Engström, H. D. B. Gottlob et al
ECS Transactions. Vol. 45 (3), p. 103 - 117
Artikel i vetenskaplig tidskrift
2012

The influence of gate material, SiO2 fabrication method and gate edge effect on interface trap density in 3C-SiC MOS capcitors

T. Gutt, T. Malachowski, H. M. Prewlocki et al
Materials Science Forum. Vol. 117, p. 109-
Artikel i vetenskaplig tidskrift
2012

Photoemission yield and the electron escape depth determination in metal-oxide-semiconductor structures on N+-type and P+-type silicon substrates

H. M. Przewlocki, D. Brzezinska, Olof Engström
Journal of Applied Physics. Vol. 111 (11), p. 114510-
Artikel i vetenskaplig tidskrift
2012

Influence of interlayer properties on the characteristics of high-k gate stacks

Olof Engström, I. Z. Mitrovic, S. Hall
Solid-State Electronics. Vol. 75, p. 63-68
Artikel i vetenskaplig tidskrift
2012

Investigation of gate edge effects on interface traps densities in 3C-SiC MOS capacitors

T. Gutt, T. Malakowski, H. M. Przewlocki et al
Material Science and Engineering B. Vol. 177, p. 1327-
Artikel i vetenskaplig tidskrift
2012

On the nature of the interfacial layer in ultra-thin TiN/LaluO3 gate stacks

I. Z. Mitrovic, S. Hall, N. Sedghi et al
Journal of Applied Physics. Vol. 112 (4), p. 044102-
Artikel i vetenskaplig tidskrift
2012

Physical trends of High-k oxides

Olof Engström
Tutorial at 23rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2012) October 1 - 5, 2012 Cagliari, Italy
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2011

Graphene Millimeter Wave Electronics

Jan Stake, Omid Habibpour, Josip Vukusic et al
6th ESA Workshop on Millimetre-Wave Technology and Applications and 4th Global Symposium on Millimeter Waves
Paper i proceeding
2011

The influence of inhomogeneous trap distribution on results of DLTS study

M. Kaczmarczyk, M. Kaniewska, Olof Engström
Microelectronics and Reliability. Vol. 51 (7), p. 1159-1161
Artikel i vetenskaplig tidskrift
2011

Electron eigenstates in quantum dots revealed by temperature derivative capacitance spectroscopy

W. Jung, G. Zaremba, Olof Engström et al
Journal of Nanoscience and Nanotechnology. Vol. 11 (12), p. 1-
Artikel i vetenskaplig tidskrift
2011

Physical trends in high-k oxides: Report from a tour in the Periodic System

Olof Engström
Tutorial at INFOS 2011, New Challenges in Nanoelectronics, Grenoble June 21 (Invited)
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2011

Quantum dots and high-k MOS stacks: Research at Chalmers and ITE (Invited)

Olof Engström
Micro and Nano-Electronics 2DAYS, Sapienza, Rome, September 29 - 30, 2011
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2011

Electron states in MOS systems (Invited)

Olof Engström
ECS Transactions. Vol. 35 (4), p. 19 -38
Paper i proceeding
2011

Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents

Bahman Raeissi, Johan Piscator, Y. Y. Chen et al
Journal of the Electrochemical Society. Vol. 158 (3), p. G63-G70
Artikel i vetenskaplig tidskrift
2011

Hole emission mechanism in Ge/Si quantum dots

M. Kaniewska, Olof Engström, A. Karmous et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 8 (2), p. 411 -413
Artikel i vetenskaplig tidskrift
2011

Spatial variarion of hole eigen energies in Ge/Si quantum wells

M. Kaniewska, Olof Engström, A. Karmous et al
AIP Conference Proceedings. Vol. 1399, p. 293-294
Paper i proceeding
2011

Coulomb interaction between InAs/GaAs quantum dots and adjacent impurities

Olof Engström, M. Kaniewska, M Kaczmarczyk
American Institute of Physics, Conf. Proc.. Vol. 1399, p. 297-
Paper i proceeding
2010

Electron eigen states in quantum dots revealed by temperature derivative capacitance spectroscopy

W. Jung, G. Zaremba, Olof Engström et al
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, p. 702-703
Paper i proceeding
2010

Capture cross sections for holes at LaLuO/Si interfaces

Olof Engström, F Ducroquet, Bahman Raeissi et al
Proceedings of the 16th Workshop on Dielectrics in Microelectronics, p. 29, Bratislava, June 28 - 30 2010
Paper i proceeding
2010

Multiparameter admittance spectroscopy (Invited)

Olof Engström, Bahman Raeissi
ECS Transactions. Vol. 35 (3), p. 257-265
Paper i proceeding
2010

Interface state properties of high-k/SiOx/Si interfaces portrayed by multiparameter admittance spectroscopy

Bahman Raeissi, T Gutt, H. D. B. Gottlob et al
Proceedings of the 16th Workshop on Dielectrics in Microelectronics, p. 103, Bratislava, June 28 - 30 2010
Paper i proceeding
2010

Gate stacks

Olof Engström, I. Z. Mitrovic, S. Hall et al
Nanoscale CMOS: Innovative Materials, Modeling and Characterization, p. 23 - 67
Kapitel i bok
2010

Electrical properties of LaLuO3/Si(100) structures prepared by molecular beam deposition

Y. Y Gomeniuk, Y. V. Gomieniuk, A. N. Nazarov et al
ECS Transactions. Vol. 33 (3), p. 221-227
Paper i proceeding
2010

Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy

M. Kaniewska, Olof Engström, M. Kaczmarczyk
Journal of Electronic Materials. Vol. 39 (6), p. 766-772
Artikel i vetenskaplig tidskrift
2010

Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces

Bahman Raeissi, Johan Piscator, Olof Engström
IEEE Transactions on Electron Devices. Vol. 57 (7), p. 1702-1705
Artikel i vetenskaplig tidskrift
2010

Spatial variations of hole eigen energies in Ge/Si quantum wells

M Kaniewska, Olof Engström, A Karmous et al
30th International Conference on the Physics of Semiconductors, Seoul, July 25 - 30, 2010
Paper i proceeding
2010

Foreword

Olof Engström
Solid-State Electronics. Vol. 54 (2), p. 85-
Artikel i övriga tidskrifter
2010

The Role of Mobile Charge in Oxygen Plasma-Enhanced Silicon-to-Silicon Wafer Bonding

Bahman Raeissi, Anke Sanz-Velasco, Olof Engström
Electrochemical and Solid-State Letters. Vol. 13 (6), p. H179-H181
Artikel i vetenskaplig tidskrift
2010

Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers (Invited)

Olof Engström, Bahman Raeissi, Johan Piscator et al
Journal of Telecommunications and Information Technology. Vol. 1, p. 10-
Artikel i vetenskaplig tidskrift
2010

Coulomb interaction between InAs/GaAs quantum dots and adjacent impurities

Olof Engström, M Kaniewska, M Kaczmarczyk
30th International Conference on the Physics of Semiconductors, Seoul, July 25 - 30, 2010
Paper i proceeding
2010

Characterization of Interface Defects

P.K. Hurley, Olof Engström, D. Bauza et al
Nanoscale CMOS (ed. Balestra), p. 545-573
Kapitel i bok
2009

Wafer bonding strength increased by mobile ions

Bahman Raeissi, Anke Sanz-Velasco, Olof Engström
Proceeding of EUROSOI 2009, p. 99-100
Paper i proceeding
2009

The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces

Johan Piscator, Bahman Raeissi, Olof Engström
Applied Physics Letters. Vol. 94 (21), p. 213507-
Artikel i vetenskaplig tidskrift
2009

Limitations in future high-k materials

Olof Engström
NANOSIL Workshop at ESSDERC, Athens, Sept. 14 - 18, 2009 (Invited)
Paper i proceeding
2009

Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems

Johan Piscator, Bahman Raeissi, Olof Engström
Journal of Applied Physics. Vol. 106 (5), p. 054510-
Artikel i vetenskaplig tidskrift
2009

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

H. D. B. Gottlob, M. Schmidt, M Schmidt et al
Microelectronic Engineering. Vol. 86 (7-9), p. 1642-1645
Artikel i vetenskaplig tidskrift
2009

Comprehensive study of InAs/GaAs quantum dots by means of complementary methods

M Kaczmarczyk, M Kaniewska, Johan Piscator et al
Materials Science & Engineering B: Solid-State Materials for Advanced Technology. Vol. 165 (1-2), p. 98-102
Paper i proceeding
2009

Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors

Y. Lu, S. Hall, L. Z. Tan et al
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. Vol. 27 (1), p. 352-
Artikel i vetenskaplig tidskrift
2009

NANOSIL network of excellence - silicon based nanostructures and nanodevices for long-term nanoelectronics applications

F Balestra, E Parker, D Leadley et al
Materials Science in Semiconductor Processing. Vol. 11 (5), p. 148-
Artikel i vetenskaplig tidskrift
2009

CMOS technology: Is this the end of the beginning or the end of the end? (Invited)

Olof Engström
Nordic Semiconductor Meeting, Reykiavik, June 15 - 17, 2009
Paper i proceeding
2009

Classification of energy levels in quantum dot structures by means of depletion layer spectroscopy methods

M Kaniewska, Olof Engström, M Kaczmarczyk
13th Internation Conference on Defects-Recognition, Imaging and Physics in Semiconductors, Wheeling, West Virginia, USA, September 13-17, 2009 (Invited)
Paper i proceeding
2009

Confined energy states in quantum dots detected by a resonant differential capacitance method

Olof Engström, M Kaniewska, M Kaczmarczyk
Applied Physics Letters. Vol. 95 (1), p. 013104-
Artikel i vetenskaplig tidskrift
2009

Charging phenomena at the interface between high-k dielectrics and SiOx interlayers

Olof Engström, Bahman Raeissi, Johan Piscator et al
8th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for the ULSI Era, Warsaw, June 22 - 24, 2009 (Invited)
Paper i proceeding
2008

Leakage current effects on C-V plots of high-k MOS capacitors

Y Lu, S. Hall, I. Z. Mitrovic et al
WODIM, Berlin, June 2008
Paper i proceeding
2008

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Olof Engström, Bahman Raeissi, Johan Piscator
Journal of Applied Physics. Vol. 103 (10), p. Art. no. 104101-
Artikel i vetenskaplig tidskrift
2008

Electrical study of InAs/GaAs quantum dots with two different environments

M Kaniewska, Olof Engström, M Kaczmarczyk et al
Phys. Stat. Sol. (c). Vol. 5, p. 2926-
Artikel i vetenskaplig tidskrift
2008

Gd silicate: A high-k dielectric compatible with high temperature annealing

H.D.B. Gottlob, M Schmidt, M.C. Lemme et al
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. Vol. 27 (1), p. 249-252
Artikel i vetenskaplig tidskrift
2008

Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/MetalGate Structures on Silicon

P.K. Hurley, K. Cherkaoui, E O'Connor et al
J. Electrochem. Soc.. Vol. 155 (2), p. G13-G20
Artikel i vetenskaplig tidskrift
2008

Deep level transient spectroscopy in quantum dot characterization

Olof Engström, M Kaniewska
Nanotech. Res. Lett.. Vol. 3, p. 179-
Artikel i vetenskaplig tidskrift
2008

Thermal instability of electron traps in InAs/GaAs quantum dot structures

M Kaniewska, Olof Engström, M Kacsmarczyk et al
J. Mater. Sci: Mater. Electron. Vol. 19, p. 101-
Artikel i vetenskaplig tidskrift
2008

Schottky barriers on silicon nanowires influenced by charge configuration

Johan Piscator, Olof Engström
Journal of Applied Physics. Vol. 104 (5), p. 054515-
Artikel i vetenskaplig tidskrift
2008

Multiphonon capture of electrons at high-k-silicon interfaces

Olof Engström, Bahman Raeissi, Johan Piscator
Gordon Conference, New London, New Hampshire, August, 2008
Paper i proceeding
2008

Characterization of deep levels and quantum confined energy levels in InAs/GaAs quantum dot structures by electrical methods

M Kaniewska, Olof Engström, M Kaczmarczyk et al
ICCE 16, Kunming, China, July 2008
Paper i proceeding
2008

High-k dielectrics and metal gates

Olof Engström
MIGAS '8, Summer School, Autrans, July 2008
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2008

A generalised methodology for oxide leakage current metric

Olof Engström, Johan Piscator, Bahman Raeissi et al
Proceeding of 9th European Workshop on Ultimate Integration of Silicon (ULIS), Udine, Italy, p. 167-
Paper i proceeding
2008

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Bahman Raeissi, Johan Piscator, Olof Engström et al
Solid-State Electronics. Vol. 52 (9), p. 1274-1279
Artikel i vetenskaplig tidskrift
2008

Deep level spectroscopy in quantum dot characterization

Olof Engström, M Kaniewska
Villa Conference on Interaction among Nanostructures, Orlando, Florida
Paper i proceeding
2008

Electron traps at HfO2/SiOx interfaces

Bahman Raeissi, Yang Yin Chen, Johan Piscator et al
Proceeding of 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, Scotland, UK, p. 130-133
Paper i proceeding
2008

A new mechanism for modulation of Schottky barrier heights on silicon nanowires

Johan Piscator, Olof Engström
Physica E: Low-Dimensional Systems and Nanostructures. Vol. 40 (7), p. 2508-2512
Artikel i vetenskaplig tidskrift
2008

Comprehensive study of InAs/GaAs quantum dots by means of complementary methods

M Kaczmarczyk, Olof Engström, Johan Piscator et al
9th Exmatec, Lodz, June 2008
Paper i proceeding
2008

Method for identifying confined electron states in quantum dot structures

M Kaczmarczyk, Olof Engström, M Kaniewska
Exmatec, Lodz, June 2008
Paper i proceeding
2008

Metastable behavior of 1 eV trap in InAs/GaAs quantum dot structures

G Zaremba, Olof Engström, M Kaniewska et al
Exmatec, Lodz, June, 2008
Paper i proceeding
2008

Quest for an optimal gadolinium silicate gate dielectric stack

I. Z. Mitrovic, Maria Werner, W.M. Davey et al
39th IEEE Semiconductor Interface Specialists Conference (SISC 2009), December 11-13, 2008,
Paper i proceeding
2008

Future high-k gate stack materials

Olof Engström
Tutorial, ESSDERC 08, Edinburgh, September, 2008
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2007

Electronic properties of InAs/GaAs quantum dots in two different environments

M Kaniewska, Olof Engström, W Jung et al
Proc. International Conference on Compound Semiconductors (ISCS), Kyoto, October 2007
Paper i proceeding
2007

Three dimensional mapping of thermal and tunnelling electron emission from InAs/GaAs quantum dots

Olof Engström, M Kaniewska, W Jung et al
Applied Physics Letters. Vol. 91, p. 033110-
Artikel i vetenskaplig tidskrift
2007

Energy concepts involved in MOS characterization

Olof Engström, T Gutt, H.M. Przewlocki
Journal of Telecommunication and Information Technology. Vol. 2, p. 86-
Artikel i vetenskaplig tidskrift
2007

Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

Olof Engström, Bahman Raeissi, S. Hall et al
Solid State Electronics. Vol. 51, p. 622-
Artikel i vetenskaplig tidskrift
2007

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Bahman Raeissi, Johan Piscator, Olof Engström et al
ESSDERC 2007 - 37th European Solid-State Device Research Conference; Munich; Germany; 11 September 2007 through 13 September 2007, p. 283-286
Paper i proceeding
2007

Thermal instability of electron traps in InAs/GaAs quantum dot structures

M Kaniewska, Olof Engström, M Kaczmarczyk et al
Proc. 11th international Conference on Defects Recognition, Imaging and Physics of Semiconductors (DRIP), Berlin, september 2007
Paper i proceeding
2007

Extremely small hole capture cross sections in HfO2/ HfxSiyOz/p-Si structures

M. Y. A. Yousif, Mikael Johansson, Olof Engström
Applied Physics Letters. Vol. 90, p. 203506-
Artikel i vetenskaplig tidskrift
2007

Electron tunneling from quantum dots characterized by deep level transient spectroscopy

Olof Engström, M Kaniewska, M Kaczmarczyk et al
Applied Physics Letters. Vol. 91, p. 133117-
Artikel i vetenskaplig tidskrift
2007

Schottky barrier modulation on silicon nanowires

Johan Piscator, Olof Engström
Applied Physics Letters. Vol. 90, p. 132197-1
Artikel i vetenskaplig tidskrift
2007

Deep traps at GaAs/GaAs interfaces grown by MBE interrupted growth technique

M Kaniewska, Olof Engström
Materials Science and Engineering C. Vol. 27, p. 1069-
Artikel i vetenskaplig tidskrift
2007

Will the insulated gate transistor survuve next decade?

Olof Engström
Future trends in microelectronics: Up the nanocreek (John Wiley & Son, 2007), p. 192-
Kapitel i bok
2007

A new mechanism for modulation of Schottky barrier heights on silicon nanowires

Johan Piscator, Olof Engström
European Materials research Society Meeting, Strasbourg, May 2007
Paper i proceeding
2007

Electrical characterization of InAs/GaAs quantum dots by frequency spectroscopy

Olof Engström, Ali Eghtedari, M Kaniewska
Materials Science and Engineering C. Vol. 27, p. 936-
Artikel i vetenskaplig tidskrift
2007

Novel high-k/metal gate materials

Olof Engström, P.K. Hurley, O Buiu et al
SiNANO Worksshop at ESSDERC 07, Munich
Paper i proceeding
2007

Extracting the relative dielectric constant for “high-k layers”from CV measurements – errors and error propagation

Octavian Buiu, S. Hall, Olof Engström et al
Microelectronics Reliability. Vol. 47, p. 678-
Artikel i vetenskaplig tidskrift
2007

Schottky barrier lowering on silicon nanowires by introduction of positive charge

Johan Piscator, Olof Engström
ICON 2007 Proceedings booklet: The Second International Conference on One-dimensional Nanomaterials
Paper i proceeding
2007

Relation between charge carrier emission mechanisms and materials properties of InAs/GaAs quantum dots

Olof Engström, M Kaniewska, W Jung et al
European materials Research Society Meeting, Strasbourg, may 2007
Paper i proceeding
2007

Interface defects in HfO2, LaSiOx and Gd2O3 high-k/metal gate structures on silicon: Energy distribution and passivation

P.K. Hurley, K. Cherkaoui, E O'Connor et al
Proc. Electrochemical Society Meeting, Washington DC, October 2007
Paper i proceeding
2007

Discovery of classes among deep level centers in GaAs

Olof Engström, M Kaniewska
Material Science and Engineering B. Vol. 138, p. 12-
Artikel i vetenskaplig tidskrift
2007

Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique

M Kaniewska, Olof Engström, M Pacholak-Cybulska et al
Physica Status Solidi (a). Vol. 204, p. 987-
Artikel i vetenskaplig tidskrift
2006

Navigation aids in the search for future high-k dielectrics: physical and electrical trends

Olof Engström, Bahman Raeissi, Steve Hall et al
Proceeding of 7th European Workshop on Ultimate Integration of Silicon (ULIS 2006), p.115-118, April 20-21, Grenoble, France (2006)., p. 115-118
Artikel i vetenskaplig tidskrift
2006

Relation between Electrical and Mechanical Characteristics of Low-Temperature Bonded Si/Si Interfaces

Bahman Raeissi, Anke Sanz-Velasco, Olof Engström
Proceeding of 210th ECS Meeting, Semiconductor Wafer Bonding 9: Science, Technology, and Applications, Vol. 3, No .6,. Vol. 3 (6), p. 217-226
Artikel i vetenskaplig tidskrift
2006

Deep levels induced by InAs/GaAs quantum dots

M Kaniewska, Olof Engström, A Barcz et al
Journal of Material Science and Engineering C. Vol. 26 (5-7), p. 871-875
Artikel i vetenskaplig tidskrift
2006

Carrier emission of electronic states of self-assembled indium arsenide quantum dots

S.W. Lin, A.M. Song, M. Missous et al
Material Science and Engeineering. Vol. 26, p. 760-
Artikel i vetenskaplig tidskrift
2006

Electron wave packet transmission through a Si quantum wire under the influence of an ionized impurity scattering potential

Ying Fu, Olof Engström
Journal of Nanoelectronics and Optoelectronics. Vol. 1, p. 108-
Artikel i vetenskaplig tidskrift
2006

Statistics of Electron Emission from InAs/GaAs quantum dots

Olof Engström, P.T. Landsberg, Y Fu
Material Science and Engineering: C. Vol. 26 (5-7), p. 739-744
Artikel i vetenskaplig tidskrift
2006

Electrical activity of deep levels in the presence of InAs/GaAs quantum dots

M Kaniewska, Olof Engström, A Barcz et al
Material Science in Semiconductor Processing. Vol. 9 (1-3), p. 36-40
Artikel i vetenskaplig tidskrift
2005

Applications of SOI materials to quantum devices and Microsystems

Johan Piscator, Alexandra Nafari, Martin Bring et al
EUROSOI-2005
Paper i proceeding
2005

Entropy associated with electron emission from InAs/GaAs quantum dots

Olof Engström, Ying Fu, Ali Eghtedari
Physica E. Vol. 27, p. 380-
Artikel i vetenskaplig tidskrift
2005

Charge carrier statistics at quantum dots

Olof Engström, P.T. Landsberg
Physical Review B. Vol. 72, p. 075360-
Artikel i vetenskaplig tidskrift
2005

Electrical properties of low-temperature bonded uni-polar Si/Si junctions

Bahman Raeissi, Petra Amirfeiz, Olof Engström
Proc. 207th ECS-Meeting, Quebec 2005, Semiconductor Wafer Bonding VII, p. 205-
Artikel i vetenskaplig tidskrift
2005

Deep levels induced by InAs/GaAs quantum dots

M Kaniewska, Olof Engström, A Barcz et al
E-MRS Meeting, Strasbourg, 2004
Paper i proceeding
2004

Emission rates for electron tunneling from InAs quantum dots to GaAs substrate

Ying Fu, Olof Engström, Y Luo
Journal of Applied Physics. Vol. 96 (11), p. 6477-6481
Artikel i vetenskaplig tidskrift
2004

Electron capture at InAs/GaAs quantum dots

Olof Engström, M Kaniewska
8th International Conference on Nanometer Scale Science and Technology, Venice, Italy, 2004
Paper i proceeding
2004

Electron capture cross sections of InAs/GaAs quantum dots

Olof Engström, M. Kaniewska, Ying Fu et al
Applied Physics Letters. Vol. 85 (14), p. 2908-2910
Artikel i vetenskaplig tidskrift
2003

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al
Applied Physics Letters. Vol. 83, p. 3578-
Artikel i vetenskaplig tidskrift
2003

Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al
International Conference on Trends in Nanotechnology, Salamanca, Spain
Paper i proceeding
1997

Steady-state and transient current transport in undoped polycrystalline diamond films

Anders Jauhiainen, Stefan Bengtsson, Olof Engström
Journal Of Applied Physics. Vol. 82 (10), p. 4966-4976
Artikel i vetenskaplig tidskrift
1997

Proceedings of the 1997 10th Biennial Conference on Insulating Films on Semiconductor (INFOS)

Olof Engström, Stefan Bengtsson
Samlingsverk (redaktörskap)
1996

Electrical properties of undoped polycrystalline diamond thin films on silicon

Anders Jauhiainen, Stefan Bengtsson, Olof Engström
Diamond for Electronic Applications. Symposium, p. 331-
Paper i proceeding
1993

Charge transport in polycrystalline diamond thin films on silicon

Anders Jauhiainen, Stefan Bengtsson, Olof Engström et al
Proc. 3rd International Sympoisum on Diamond Materials. The Electrochemical Society.. Vol. 93 (17), p. 927-
Artikel i vetenskaplig tidskrift
1992

Charge trapping in wafer bonded structures

Anders Jauhiainen, Stefan Bengtsson, Olof Engström
Proc of the 2nd European Solid State Device Research Conference. ESSDERC, p. 597-
Artikel i vetenskaplig tidskrift
1992

Oxide Degradation Of Wafer Bonded Metal-Oxide Semiconductor Capacitors Following Fowler-Nordheim Electron Injection

Stefan Bengtsson, Anders Jauhiainen, Olof Engström
Journal Of The Electrochemical Society. Vol. 139 (8), p. 2302-2306
Artikel i vetenskaplig tidskrift
1992

Oxide degradation of wafer bonded MOS capacitors following Fowler-Nordheim electron injection

Stefan Bengtsson, Anders Jauhiainen, Olof Engström
Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, p. 339-
Paper i proceeding
1992

The Bonded Unipolar Silicon-Silicon Junction

Stefan Bengtsson, G. Andersson, Mats O. Andersson et al
Journal Of Applied Physics. Vol. 72 (1), p. 124-140
Artikel i vetenskaplig tidskrift
1992

Electrical characterization of bonding interfaces

Olof Engström, Stefan Bengtsson
Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, p. 295-
Paper i proceeding
1992

Electrical Characterization Of Bonding Interfaces

Olof Engström, Stefan Bengtsson, G. Andersson et al
Journal Of The Electrochemical Society. Vol. 139 (12), p. 3638-3643
Artikel i vetenskaplig tidskrift
1992

Charge Trapping In Wafer Bonded Mos Structures

Anders Jauhiainen, Stefan Bengtsson, Olof Engström
Microelectronic Engineering. Vol. 19 (1-4), p. 597-600
Artikel i vetenskaplig tidskrift
1991

Electrical Methods For Characterizing Directly Bonded Silicon Silicon Interfaces

Stefan Bengtsson, Olof Engström
Japanese Journal Of Applied Physics Part 1-Regular Papers Short Notes & Review Papers. Vol. 30 (2), p. 356-361
Artikel i vetenskaplig tidskrift
1990

Low-Temperature Preparation Of Silicon Silicon Interfaces By The Silicon-To-Silicon Direct Bonding Method

Stefan Bengtsson, Olof Engström
Journal Of The Electrochemical Society. Vol. 137 (7), p. 2297-2303
Artikel i vetenskaplig tidskrift
1990

Charge densities at silicon interfaces prepared by wafer bonding

Stefan Bengtsson, Olof Engström
1990 IEEE SOS/SOI Technology Conference., p. 77-
Artikel i vetenskaplig tidskrift
1990

Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces

Stefan Bengtsson, Olof Engström
ESSDERC 90. 20th European Solid State Device Research Conference, p. 1-
Paper i proceeding
1989

Interface Charge Control Of Directly Bonded Silicon Structures

Stefan Bengtsson, Olof Engström
Journal Of Applied Physics. Vol. 66 (3), p. 1231-1239
Artikel i vetenskaplig tidskrift
1989

IC process compatible preparation of silicon interfaces using the silicon-to-silicon direct bonding method

Stefan Bengtsson, Olof Engström
ESSDERC '89. 19th European Solid State Devices Research Conference, p. 353-
Paper i proceeding
1988

Electronic-Properties Of Silicon Interfaces Prepared By Direct Bonding

Stefan Bengtsson, Olof Engström
Journal De Physique. Vol. 49 (C-4), p. 63-66
Artikel i vetenskaplig tidskrift

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