Olof Engström

Properties of Metal/High-k Oxide/Graphene Structures

2017

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

The MOS System

Internal photoemission technique for high-k oxide/semiconductor band offset determination: The influence of semiconductor bulk properties

Gate stacks

Charge carrier traffic at self-assembled Ge quantum dots on Si

2013

Analysis of electron capture at oxide traps by electric field injection

Compensation effects at electron traps in semiconductors

Response to "Comment on a model for internal photoemission at high-k oxide silicon energy barriers, J. Appl. Phys. 112, 064115 (2012)"

Characterization of Interface Defects

The influence of gate material, SiO2 fabrication method and gate edge effect on interface trap density in 3C-SiC MOS capcitors

2012

On the nature of the interfacial layer in ultra-thin TiN/LaluO3 gate stacks

Admittance spectroscopy of Si/LaLuO3 and Si/GdSiO MOS Structures (Invited)

2012

A model for internal photoemission at high-k oxide/silicon energy barriers

Influence of interlayer properties on the characteristics of high-k gate stacks

Charge carrier traffic at self-assembled Ge quantum dots on Si

Investigation of gate edge effects on interface traps densities in 3C-SiC MOS capacitors

Physical trends of High-k oxides

2012

Photoemission yield and the electron escape depth determination in metal-oxide-semiconductor structures on N+-type and P+-type silicon substrates

Graphene Millimeter Wave Electronics

Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents

Quantum dots and high-k MOS stacks: Research at Chalmers and ITE (Invited)

Electron states in MOS systems (Invited)

Hole emission mechanism in Ge/Si quantum dots

Spatial variarion of hole eigen energies in Ge/Si quantum wells

Physical trends in high-k oxides: Report from a tour in the Periodic System

Coulomb interaction between InAs/GaAs quantum dots and adjacent impurities

The influence of inhomogeneous trap distribution on results of DLTS study

Electron eigenstates in quantum dots revealed by temperature derivative capacitance spectroscopy

Interface state properties of high-k/SiOx/Si interfaces portrayed by multiparameter admittance spectroscopy

The Role of Mobile Charge in Oxygen Plasma-Enhanced Silicon-to-Silicon Wafer Bonding

Capture cross sections for holes at LaLuO/Si interfaces

Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers (Invited)

Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces

Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy

Coulomb interaction between InAs/GaAs quantum dots and adjacent impurities

Foreword

Multiparameter admittance spectroscopy (Invited)

Electron eigen states in quantum dots revealed by temperature derivative capacitance spectroscopy

Spatial variations of hole eigen energies in Ge/Si quantum wells

Electrical properties of LaLuO3/Si(100) structures prepared by molecular beam deposition

CMOS technology: Is this the end of the beginning or the end of the end? (Invited)

Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors

The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces

Confined energy states in quantum dots detected by a resonant differential capacitance method

Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems

NANOSIL network of excellence - silicon based nanostructures and nanodevices for long-term nanoelectronics applications

Classification of energy levels in quantum dot structures by means of depletion layer spectroscopy methods

Wafer bonding strength increased by mobile ions

Comprehensive study of InAs/GaAs quantum dots by means of complementary methods

Limitations in future high-k materials

Charging phenomena at the interface between high-k dielectrics and SiOx interlayers

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

Comprehensive study of InAs/GaAs quantum dots by means of complementary methods

Deep level spectroscopy in quantum dot characterization

Metastable behavior of 1 eV trap in InAs/GaAs quantum dot structures

Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/MetalGate Structures on Silicon

Future high-k gate stack materials

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Schottky barriers on silicon nanowires influenced by charge configuration

A new mechanism for modulation of Schottky barrier heights on silicon nanowires

Method for identifying confined electron states in quantum dot structures

Multiphonon capture of electrons at high-k-silicon interfaces

Leakage current effects on C-V plots of high-k MOS capacitors

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Gd silicate: A high-k dielectric compatible with high temperature annealing

A generalised methodology for oxide leakage current metric

Characterization of deep levels and quantum confined energy levels in InAs/GaAs quantum dot structures by electrical methods

Electrical study of InAs/GaAs quantum dots with two different environments

Quest for an optimal gadolinium silicate gate dielectric stack

High-k dielectrics and metal gates

Thermal instability of electron traps in InAs/GaAs quantum dot structures

Electron traps at HfO2/SiOx interfaces

Deep level transient spectroscopy in quantum dot characterization

Novel high-k/metal gate materials

The formation and characterisation of lanthanum oxide based Si/High-k/NiSi gate stacks by electron beam evaporation: An examination of in-situ amorphous silicon capping and NiSi formation

Schottky barrier modulation on silicon nanowires

Thermal instability of electron traps in InAs/GaAs quantum dot structures

Electronic properties of InAs/GaAs quantum dots in two different environments

Energy concepts involved in MOS characterization

Interface defects in HfO2, LaSiOx and Gd2O3 high-k/metal gate structures on silicon: Energy distribution and passivation

Relation between charge carrier emission mechanisms and materials properties of InAs/GaAs quantum dots

Electron tunneling from quantum dots characterized by deep level transient spectroscopy

A new mechanism for modulation of Schottky barrier heights on silicon nanowires

Electrical characterization of InAs/GaAs quantum dots by frequency spectroscopy

Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique

Extracting the relative dielectric constant for “high-k layers”from CV measurements – errors and error propagation

Extremely small hole capture cross sections in HfO2/ HfxSiyOz/p-Si structures

Three dimensional mapping of thermal and tunnelling electron emission from InAs/GaAs quantum dots

Deep traps at GaAs/GaAs interfaces grown by MBE interrupted growth technique

Discovery of classes among deep level centers in GaAs

Schottky barrier lowering on silicon nanowires by introduction of positive charge

Will the insulated gate transistor survuve next decade?

Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Relation between Electrical and Mechanical Characteristics of Low-Temperature Bonded Si/Si Interfaces

Deep levels induced by InAs/GaAs quantum dots

Carrier emission of electronic states of self-assembled indium arsenide quantum dots

Electron wave packet transmission through a Si quantum wire under the influence of an ionized impurity scattering potential

Navigation aids in the search for future high-k dielectrics: physical and electrical trends

Electrical activity of deep levels in the presence of InAs/GaAs quantum dots

Statistics of Electron Emission from InAs/GaAs quantum dots

Applications of SOI materials to quantum devices and Microsystems

Entropy associated with electron emission from InAs/GaAs quantum dots

Electrical properties of low-temperature bonded uni-polar Si/Si junctions

Deep levels induced by InAs/GaAs quantum dots

Charge carrier statistics at quantum dots

Electron capture cross sections of InAs/GaAs quantum dots

Electron capture at InAs/GaAs quantum dots

Emission rates for electron tunneling from InAs quantum dots to GaAs substrate

Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Steady-state and transient current transport in undoped polycrystalline diamond films

Proceedings of the 1997 10th Biennial Conference on Insulating Films on Semiconductor (INFOS)

Electrical properties of undoped polycrystalline diamond thin films on silicon

Charge transport in polycrystalline diamond thin films on silicon

Electrical Characterization Of Bonding Interfaces

Electrical characterization of bonding interfaces

Oxide Degradation Of Wafer Bonded Metal-Oxide Semiconductor Capacitors Following Fowler-Nordheim Electron Injection

Oxide degradation of wafer bonded MOS capacitors following Fowler-Nordheim electron injection

Charge trapping in wafer bonded structures

Charge Trapping In Wafer Bonded Mos Structures

The Bonded Unipolar Silicon-Silicon Junction

Electrical Methods For Characterizing Directly Bonded Silicon Silicon Interfaces

Charge densities at silicon interfaces prepared by wafer bonding

Low-Temperature Preparation Of Silicon Silicon Interfaces By The Silicon-To-Silicon Direct Bonding Method

Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces

Interface Charge Control Of Directly Bonded Silicon Structures

IC process compatible preparation of silicon interfaces using the silicon-to-silicon direct bonding method

Electronic-Properties Of Silicon Interfaces Prepared By Direct Bonding