Electron capture cross sections of InAs/GaAs quantum dots
Artikel i vetenskaplig tidskrift, 2004

The thermal emission rates of electrons from InAs/GaAs quantum dots were measured, to found the capture cross sections in the extremely high region of 10-11-10-10 cm2. An additional method based on a static measurement at thermal equilibrium was used where the Fermi level was positioned at the free energy level of the quantum dot s shell. A Schottky diode with a plane of QDs grown in its depletion region and back-biased in such a way that the Fermi level coincides with the electron energy level. The Fermi level passes the lowest energy level of the QD, at the voltage marked by Vp in the graphs.

Författare

Olof Engström

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

M. Kaniewska

Instytut Technologii Elektronowej (ITE)

Ying Fu

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Piscator

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Mikael Malmkvist

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 85 14 2908-2910

Ämneskategorier

Fysik

DOI

10.1063/1.1802377

Mer information

Senast uppdaterat

2018-09-06