Mikael Malmkvist
Visar 31 publikationer
Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study
Gate-recess Technology for InAs/AlSb HEMTs
Narrow band gap III-V based-FET for ultra low power high frequency analog applications
Epitaxial optimization of 130 nm gate-length InGaAs/InAlAs/InP HEMTs for low-noise applications
InAs/AlSb HEMTs characterised at cryogenic temperatures
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Epitaxial optimization of 130-nm gate-length InGaAs/InAlAs HEMTs for high-frequency applications
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain
Optimization of narrow bandgap HEMTs for low-noise and low-power applications
Development of InAs/AlSb HEMT technology for high-frequency operation
(Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs
DC and RF performance of 0.2-0.4µm gate length InAs/AlSb HEMTs
Characterization of insulated-gate versus Schottky-gate InAs/AlSb HEMTs
Benchmarking of low band gap III-V based HEMTs and sub-100nm CMOS under low drain voltage regime
Physical Simulations of Pseudomorphic InP HEMTs
RF and Noise Optimization of Pseudomorphic inP HEMT Technology
Noise optimization of InP HEMTs
Effect of Schottky layer thickness on DC, RF and noise of 70-nm gate length InP HEMTs
A W-band MMIC amplifier using 70-nm gate length InP HEMT technology
Optimization of sub-100 nm InP HEMT technology
W-band MMIC amplifier using pseudomorphic InP HEMT wiht sub 100-nm gate length
InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance
Electron capture cross sections of InAs/GaAs quantum dots
A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifier
Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots
Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots
Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots
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