Mikael Malmkvist
Showing 31 publications
Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study
Narrow band gap III-V based-FET for ultra low power high frequency analog applications
Epitaxial optimization of 130 nm gate-length InGaAs/InAlAs/InP HEMTs for low-noise applications
InAs/AlSb HEMTs characterised at cryogenic temperatures
Gate-recess Technology for InAs/AlSb HEMTs
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Epitaxial optimization of 130-nm gate-length InGaAs/InAlAs HEMTs for high-frequency applications
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain
Optimization of narrow bandgap HEMTs for low-noise and low-power applications
(Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs
DC and RF performance of 0.2-0.4µm gate length InAs/AlSb HEMTs
Development of InAs/AlSb HEMT technology for high-frequency operation
Benchmarking of low band gap III-V based HEMTs and sub-100nm CMOS under low drain voltage regime
Characterization of insulated-gate versus Schottky-gate InAs/AlSb HEMTs
RF and Noise Optimization of Pseudomorphic inP HEMT Technology
Physical Simulations of Pseudomorphic InP HEMTs
Effect of Schottky layer thickness on DC, RF and noise of 70-nm gate length InP HEMTs
Noise optimization of InP HEMTs
A W-band MMIC amplifier using 70-nm gate length InP HEMT technology
Optimization of sub-100 nm InP HEMT technology
InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance
W-band MMIC amplifier using pseudomorphic InP HEMT wiht sub 100-nm gate length
Electron capture cross sections of InAs/GaAs quantum dots
A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifier
Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots
Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots
Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots
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