Effect of Schottky layer thickness on DC, RF and noise of 70-nm gate length InP HEMTs
Paper in proceeding, 2006
Author
Mikael Malmkvist
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Malin Borg
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
18th International Conference on Indium Phosphide and Related Materials, pp. 386-388
329-331
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering