Effect of Schottky layer thickness on DC, RF and noise of 70-nm gate length InP HEMTs
Paper in proceedings, 2006

Author

Mikael Malmkvist

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Malin Borg

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

18th International Conference on Indium Phosphide and Related Materials, pp. 386-388

329-331

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/6/2017