Jan Grahn

Showing 115 publications
Sub-mW Cryogenic InP HEMT LNA for Qubit Readout
A 100-mu W 4-6 GHz Cryogenic InP HEMT LNA Achieving an Average Noise Temperature of 2.6 K
A 100-µW 4-6 GHz Cryogenic InP HEMT LNA Achieving an Average Noise Temperature of 2.6 K
Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs
On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs
III-V HEMTs for cryogenic low noise amplifiers
A 300-mu W Cryogenic HEMT LNA for Quantum Computing
InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers
A 300-µW Cryogenic HEMT LNA for Quantum Computing
Strong Geometrical Magnetoresistance and Angular Dependence in InP HEMTs for cryogenic LNAs
Magnetic Influence on CryogenicInP HEMT LNAs
0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
Magnetic Influence on Cryogenic InP HEMT DC Characteristics
Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs
Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs
Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers
Cryogenic LNAs for SKA band 2 to 5
Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K
10 K Room Temperature LNA for SKA Band 1
Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
Cryogenic low-noise InP HEMTs: A source-drain distance study
Shot-noise suppression effects in InGaAs planar diodes at room temperature
Cryogenic Kink Effect in InP pHEMTs: A Pulsed Measurements Study
Zero-Bias Self-Switching In65Ga35As channel Diodes for Terahertz Detection,
Graphene self-switching diodes as zero-bias microwave detectors
SWI 1200/600 GHz highly integrated receiver front-ends
Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Phonon black-body radiation limit for heat dissipation in electronics
Cryogenic noise performance of InGAAs/InAlAs HEMTs grown on InP and GaAs substrate
Low noise GaAs Schottky TMIC and InP HEMT MMIC based Receivers for the ISMAR and SWI Instruments
On the effect of delta-doping in self-switching diodes
Reliability Assessment of Mixers, Multipliers and Low Noise Amplifiers for Space Applications
An InP MMIC process optimized for low noise at Cryo
True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study
Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT
Terahertz detection in zero-bias InAs self-switching diodes at room temperature
Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes
Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs
Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications
Influence of gate-channel distance in low-noise InP HEMTs
200 GHz communication system using unipolar InAs THz rectifiers
Room temperature THz detection and emission with semiconductor nanodevices
Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
Fabrication and DC characterization of InAs/AlSb self-switching diodes
Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
Source-drain scaling of ion-implanted InAs/AlSb HEMTs
Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors
Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs
Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
Optimized InP HEMTs for low noise at cryogenic temperatures
Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
Highly linear 1-3 GHz GaN HEMT low-noise amplifier
Design and characterization of a highly linear 3 GHz GaN HEMT amplifier
Monte Carlo study of the noise performance of isolated-gate InAs HEMTs
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection
Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate
Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition
Optimization of MBE-grown AlSb/InAs High Electron Mobility Transistor Structures
Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs
Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study
Band-reconfigurable LDMOS power amplifier
Anisotropic transport properties in InAs/AlSb heterostructures
Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors
DC and RF cryogenic behaviour of InAs/AlSb HEMTs
Sb-HEMT: Toward 100-mV Cryogenic Electronics
Linearization of Efficiency-Optimized Dynamic Load Modulation Transmitter Architectures
Epitaxial optimization of 130 nm gate-length InGaAs/InAlAs/InP HEMTs for low-noise applications
Gate-recess Technology for InAs/AlSb HEMTs
InAs/AlSb HEMTs characterised at cryogenic temperatures
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Narrow band gap III-V based-FET for ultra low power high frequency analog applications
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain
Epitaxial optimization of 130-nm gate-length InGaAs/InAlAs HEMTs for high-frequency applications
(Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs
DC and RF performance of 0.2-0.4µm gate length InAs/AlSb HEMTs
Characterization of insulated-gate versus Schottky-gate InAs/AlSb HEMTs
Benchmarking of low band gap III-V based HEMTs and sub-100nm CMOS under low drain voltage regime
Development of InAs/AlSb HEMT technology for high-frequency operation
Physical Simulations of Pseudomorphic InP HEMTs
Noise optimization of InP HEMTs
Novel devices for (sub)millimeter-wave space applications
An SiC MESFET-based MMIC process
Effect of Schottky layer thickness on DC, RF and noise of 70-nm gate length InP HEMTs
W-band MMIC amplifier using pseudomorphic InP HEMT wiht sub 100-nm gate length
A W-band MMIC amplifier using 70-nm gate length InP HEMT technology
Fabrication of InP HEMTs for cryogenically cooled low noise amplifiers
Optimization of sub-100 nm InP HEMT technology
Vertical scaling of gate-to-channel distance for a 70 nm InP pseudomorphic HEMT technology
Scaling of epitaxial layers in a 70 nm gate length InGaAs-InAlAs-InP HEMT technology
Novel devices for (sub)millimeter-wave space applications
InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance
A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifier
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Showing 10 research projects
Channel noise in two-dimensional field-effect electron devices
Pulsed low-noise amplifiers for quantum information systems
Components for Quantum Computers
Transistorförstärkning vid millikelvin
Kompetensnav antenn-, mikrovåg- och terahertzsystem (AMT)
Super/semiconductor quantum-noise-limited broadband amplifier (SuperSemiQ)
Ultra-low power transitors for millimetre-wave amplification
Semiconductor Nanodevices for Room temperature THz Emission and Detection (ROOTHz)