Jan Grahn

Full Professor at Terahertz and Millimetre Wave Laboratory

I am exploring low-noise semiconductor devices. My driving force is to break the current sensitivity limit for transistor-based amplifiers in the microwave- and millimeterwave range.

My research team has demonstrated transistors with a noise level just a few times the quantum noise limit. The device is a high-electron mobility transistor using an InAlAs- InGaAs heterojunction. Our research considers material science, transistor technology, device physics, electrical modelling, microwave amplifier design and high-frequency measurements.

Our results have impact on quantum computing, radio astronomy and climate satellites. From our group, Low Noise Factory AB was started which delivers amplifier products to nearly every quantum group worldwide.

I am teaching Electrical Circuits and Systems at Engineering Physics B.Sc. programme. I also give a Ph.D. course on High-Speed Transistors every second year.

Source: chalmers.se

Contact Details ORCID

Publications (121)
Projects (10)

Showing 121 publications

2024

Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content

Junjie Li, Johan Bergsten, Arsalan Pourkabirian et al

IEEE Journal of the Electron Devices Society. Vol. 12, p. 243-248

Journal article

2024

Sub-mW Cryogenic InP HEMT LNA for Qubit Readout

Yin Zeng, Jorgen Stenarson, Peter Sobis et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 72 (3), p. 1606-1617

Journal article

2024

Transient Noise and Gain Characterization for Pulse-Operated LNAs

Yin Zeng, Jörgen Stenarson, Peter Sobis et al

IEEE Microwave and Wireless Technology Letters. Vol. 34 (7), p. 911-914

Journal article

2024

Investigation of Noise Performance in InP HEMTs with Varying Indium Channel Composition from 80 K to 300 K

Junjie Li, Justin Chen, A. J. Minnich et al

Other conference contribution

2023

100-μW Cryogenic HEMT LNAs for Quantum Computing

Yin Zeng, Junjie Li, Jörgen Stenarson et al

2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023, p. 71-74

Paper in proceeding

2023

Optimization of InGaAs Channel for Cryogenic InP HEMT Low-Noise Amplifiers

Junjie Li, Johan Bergsten, Arsalan Pourkabirian et al

Other conference contribution

2023

Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation

Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti et al

IEEE Transactions on Electron Devices. Vol. 70 (5), p. 2431-2436

Journal article

2022

A 100-µW 4-6 GHz Cryogenic InP HEMT LNA Achieving an Average Noise Temperature of 2.6 K

Yin Zeng, Jörgen Stenarson, Peter Sobis et al

Asia-Pacific Microwave Conference Proceedings, APMC. Vol. 2022-November, p. 13-15

Paper in proceeding

2022

Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs

Junjie Li, Arsalan Pourkabirian, Johan Bergsten et al

IEEE Electron Device Letters. Vol. 43 (7), p. 1029-1032

Journal article

2022

On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs

Junjie Li, Arsalan Pourkabirian, Johan Bergsten et al

Asia-Pacific Microwave Conference Proceedings, APMC. Vol. 2022-November, p. 10-12

Paper in proceeding

2022

A 100-mu W 4-6 GHz Cryogenic InP HEMT LNA Achieving an Average Noise Temperature of 2.6 K

Yin Zeng, Jorgen Stenarson, Peter Sobis et al

2022 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), p. 13-15

Paper in proceeding

2021

Reduction of Noise Temperature in Cryogenic InP HEMT Low Noise Amplifiers with Increased Spacer Thickness in InAlAs-InGaAs-InP Heterostructures

Junjie Li, Arsalan Pourkabirian, Johan Bergsten et al

Other conference contribution

2020

InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers

Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti et al

IEEE Electron Device Letters. Vol. 41 (7), p. 1005-1008

Journal article

2020

A 300-mu W Cryogenic HEMT LNA for Quantum Computing

Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti et al

PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), p. 1299-1302

Paper in proceeding

2020

III-V HEMTs for cryogenic low noise amplifiers

Jan Grahn, Eunjung Cha, Arsalan Pourkabirian et al

Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2020-December, p. 25.6.1-25.6.4

Paper in proceeding

2020

A 300-µW Cryogenic HEMT LNA for Quantum Computing

Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti et al

IEEE MTT-S International Microwave Symposium Digest. Vol. 2020-August, p. 1299-1302

Paper in proceeding

2019

Strong Geometrical Magnetoresistance and Angular Dependence in InP HEMTs for cryogenic LNAs

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al

Other conference contribution

2019

Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Giuseppe Moschetti et al

IIS UTokyo SYMPOSIUM No.100

Paper in proceeding

2019

On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al

AIP Advances. Vol. 9 (8)

Journal article

2018

Magnetic Influence on CryogenicInP HEMT LNAs

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al

Other conference contribution

2018

Magnetic Influence on Cryogenic InP HEMT DC Characteristics

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al

CSW 2018 Proceedings, p. 183-183

Other conference contribution

2018

0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers

Eunjung Cha, Niklas Wadefalk, Per Ake Nilsson et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (11), p. 4860-4869

Journal article

2017

Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K

Yulung Tang, Niklas Wadefalk, J. Kooi et al

IEEE MTT-S International Microwave Symposium Digest, p. 176-179

Paper in proceeding

2017

Cryogenic LNAs for SKA band 2 to 5

Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al

IEEE MTT-S International Microwave Symposium Digest, p. 164-167

Paper in proceeding

2017

Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

M. A. McCulloch, Jan Grahn, S. J. Melhuish et al

Journal of Astronomical Telescopes, Instruments, and Systems. Vol. 3 (1)

Journal article

2017

Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs

Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 65 (12), p. 5171-5180

Journal article

2017

Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs

Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al

IEEE MTT-S International Microwave Symposium Digest, p. 168-171

Paper in proceeding

2016

Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process

Per-Åke Nilsson, Arsalan Pourkabirian, Joel Schleeh et al

Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. Vol. 1, p. Art. no. 7411746-

Paper in proceeding

2016

Cryogenic low-noise InP HEMTs: A source-drain distance study

Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al

2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-

Paper in proceeding

2016

10 K Room Temperature LNA for SKA Band 1

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al

IEEE MTT-S International Microwave Symposium Digest. Vol. 2016-August, p. Art no 7540344-

Paper in proceeding

2016

Ultra Low Noise 600/1200 GHz and 874 GHz GaAs Schottky Receivers for SWI and ISMAR

Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al

Twenty-seventh International Symposium on Space Terahertz Technology (ISSTT)

Paper in proceeding

2015

Zero-Bias Self-Switching In65Ga35As channel Diodes for Terahertz Detection,

Andreas Westlund, Per-Åke Nilsson, P. Sangaré et al

IEEE International Conference on Indium Phosphide and Related Materials Conference Proceedings 2015. Vol. CSW 2015, p. 82-83

Paper in proceeding

2015

Phonon black-body radiation limit for heat dissipation in electronics

Joel Schleeh, J. Mateos, Ignacio Íñiguez-De-La-Torre et al

Nature Materials. Vol. 14 (2), p. 187-192

Journal article

2015

Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties

Andreas Westlund, Per-Åke Nilsson, P. Sangaré et al

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. Vol. 33 (2), p. 021207-

Journal article

2015

Experimental analysis of shot-noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature

Ó García-Pérez, J. Mateos, Susana Muñoz Pérez et al

2015 International Conference on Noise and Fluctuations, ICNF 2015

Paper in proceeding

2015

Shot-noise suppression effects in InGaAs planar diodes at room temperature

Ó García-Pérez, H. Sánchez-Martín, J. Mateos et al

Journal of Physics: Conference Series. Vol. 647 (1)

Paper in proceeding

2015

Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

Andreas Westlund, P. Sangare, G. Ducournau et al

Solid-State Electronics. Vol. 104 (Feb), p. 79-85

Journal article

2015

SWI 1200/600 GHz highly integrated receiver front-ends

Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al

36th ESA Antenna Workshop on Antennas and RF Systems for Space Science, ESA/ESTEC ,Noordwijk, The Netherlands; 6-9 Oct. 2015. Vol. session S3.1.2

Paper in proceeding

2015

Cryogenic Kink Effect in InP pHEMTs: A Pulsed Measurements Study

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al

IEEE Transactions on Electron Devices. Vol. 62 (2), p. 532-537

Journal article

2015

Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

A. Rodriguez-Fernandez, Ignacio Íñiguez-De-La-Torre, Ó García-Pérez et al

Journal of Physics: Conference Series. Vol. 647 (1)

Paper in proceeding

2015

Graphene self-switching diodes as zero-bias microwave detectors

Andreas Westlund, Michael Winters, I. G. Ivanov et al

Applied Physics Letters. Vol. 106 (9), p. 093116-

Journal article

2014

Reliability Assessment of Mixers, Multipliers and Low Noise Amplifiers for Space Applications

Aik-Yean Tang, Peter Sobis, Niklas Wadefalk et al

GigaHertz Symposium

Paper in proceeding

2014

On the effect of delta-doping in self-switching diodes

Andreas Westlund, I. Iniguez-de-la-Torre, Per-Åke Nilsson et al

Applied Physics Letters. Vol. 105 (9), p. Article Number: 093505 -

Journal article

Show project

2014

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

Eric Lefebvre, Giuseppe Moschetti, Mikael Malmkvist et al

Semiconductor Science and Technology. Vol. 29 (3)

Journal article

2014

Low noise GaAs Schottky TMIC and InP HEMT MMIC based Receivers for the ISMAR and SWI Instruments

Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al

ESA Workshop on Micro and Millimetre Wave Technology and Techniques, Estec, the Netherlands

Paper in proceeding

2014

Cryogenic noise performance of InGAAs/InAlAs HEMTs grown on InP and GaAs substrate

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al

Solid-State Electronics. Vol. 91, p. 74-77

Journal article

2014

An InP MMIC process optimized for low noise at Cryo

Per-Åke Nilsson, Joel Schleeh, Niklas Wadefalk et al

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Paper in proceeding

2013

Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes

Andreas Westlund, Giuseppe Moschetti, Per-Åke Nilsson et al

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Paper in proceeding

2013

Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 61 (2), p. 871-877

Journal article

2013

DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation

Giuseppe Moschetti, Eric Lefebvre, Martin Fagerlind et al

Solid-State Electronics. Vol. 87, p. 85-89

Journal article

2013

200 GHz communication system using unipolar InAs THz rectifiers

G. Ducournau, Andreas Westlund, P. Sangaré et al

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

Paper in proceeding

2013

Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al

IEEE Transactions on Electron Devices. Vol. 60 (1), p. 206-212

Journal article

2013

Room temperature THz detection and emission with semiconductor nanodevices

J. Mateos, Jean François Millithaler, Ignacio Íñiguez-De-La-Torre et al

Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013, p. 215-218

Paper in proceeding

2013

Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al

IEEE Transactions on Electron Devices. Vol. 60 (5), p. 1625-1631

Journal article

2013

Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Paper in proceeding

2013

Influence of gate-channel distance in low-noise InP HEMTs

Per-Åke Nilsson, Helena Rodilla, Joel Schleeh et al

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Paper in proceeding

2013

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

Andreas Westlund, P. Sangare, G. Ducournau et al

Applied Physics Letters. Vol. 103 (13)

Journal article

Show project

2013

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

Giuseppe Moschetti, Morteza Abbasi, Per-Åke Nilsson et al

Solid-State Electronics. Vol. 79, p. 268-273

Journal article

2012

Fabrication and DC characterization of InAs/AlSb self-switching diodes

Andreas Westlund, Giuseppe Moschetti, Huan Zhao Ternehäll et al

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 65-68

Paper in proceeding

2012

Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al

IEEE MTT-S International Microwave Symposium Digest

Paper in proceeding

2012

Optimized InP HEMTs for low noise at cryogenic temperatures

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 241-244

Paper in proceeding

2012

Planar InAs/AlSb HEMTs With Ion-Implanted Isolation

Giuseppe Moschetti, Per-Åke Nilsson, A. Hallen et al

IEEE Electron Device Letters. Vol. 33 (4), p. 510-512

Journal article

2012

Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Joel Schleeh, Göran Alestig, John Halonen et al

IEEE Electron Device Letters. Vol. 33 (5), p. 664-666

Journal article

2012

European Microwaves

R. Sorrentino, Jan Grahn

IEEE Microwave Magazine. Vol. 13 (6), p. 65-79

Magazine article

2012

Source-drain scaling of ion-implanted InAs/AlSb HEMTs

Giuseppe Moschetti, Per-Åke Nilsson, A. Hallen et al

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 57-60

Paper in proceeding

2012

Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

Beatriz G. Vasallo, Helena Rodilla, T. Gonzalez et al

Semiconductor Science and Technology. Vol. 27 (6), p. Article Number: 065018-

Journal article

2012

Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications

Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al

IEEE Microwave and Wireless Components Letters. Vol. 22 (3), p. 144-146

Journal article

2012

Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs

Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al

15th European Microwave Week - Space for Microwaves Conference Proceedings. Amsterdam, NETHERLANDS. OCT 28-NOV 02, 2012, p. 373-376

Paper in proceeding

2012

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque, S. El Kazzi, J. L. Codron et al

Applied Physics Letters. Vol. 100 (26)

Journal article

2012

Highly linear 1-3 GHz GaN HEMT low-noise amplifier

Pirooz Chehrenegar, Morteza Abbasi, Jan Grahn et al

IEEE MTT-S International Microwave Symposium Digest

Paper in proceeding

2012

Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

Helena Rodilla, T. Gonzalez, Giuseppe Moschetti et al

Semiconductor Science and Technology. Vol. 27 (1), p. 015008-

Journal article

2011

Design and characterization of a highly linear 3 GHz GaN HEMT amplifier

Pirooz Chehrenegar, Olle Axelsson, Jan Grahn et al

2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2011. Vienna, 18-19 April 2011

Paper in proceeding

2011

Optimization of MBE-grown AlSb/InAs High Electron Mobility Transistor Structures

Huan Zhao Ternehäll, Giuseppe Moschetti, Shu Min Wang et al

16th European MBE conference, France, p. 133-134

Paper in proceeding

2011

Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs

Helena Rodilla, T. Gonzalez, J. Mateos et al

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February through 11 February

Paper in proceeding

2011

Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

Beatriz G. Vasallo, Helena Rodilla, T. Gonzalez et al

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February 2011 through 11 February

Paper in proceeding

2011

Monte carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors

Beatriz G. Vasallo, H. Rodilla, T. Gonzalez et al

Acta Physica Polonica A. Vol. 119 (2), p. 222-224

Paper in proceeding

Show project

2011

InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation

Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al

Solid-State Electronics. Vol. 64 (1), p. 47-53

Journal article

2011

Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection

L.Q.Zhang, Y.Alimi, C.Balocco et al

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on (2-7 Oct. 2011), p. 1-2

Paper in proceeding

2011

Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

H. Rodilla, T. Gonzalez, Giuseppe Moschetti et al

Semiconductor Science and Technology. Vol. 26 (2)

Journal article

2011

Monte Carlo study of the noise performance of isolated-gate InAs HEMTs

H. Rodilla, Beatriz G. Vasallo, J. Mateos et al

21st International Conference on Noise and Fluctuations, ICNF 2011; Toronto, ON; 12 June 2011 through 16 June 2011, p. 184-187

Paper in proceeding

2011

Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition

Joel Schleeh, John Halonen, Bengt Nilsson et al

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011

Paper in proceeding

2010

Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

Beatriz G. Vasallo, H. Rodilla, T. Gonzalez et al

Journal of Applied Physics. Vol. 108 (9)

Journal article

Show project

2010

Sb-HEMT: Toward 100-mV Cryogenic Electronics

A. Noudeviwa, Y. Roelens, F. Danneville et al

IEEE Transactions on Electron Devices. Vol. 57 (8), p. 1903-1909

Journal article

2010

Band-reconfigurable LDMOS power amplifier

Hossein Mashad Nemati, Jan Grahn, Christian Fager

2010 European Microwave Conference, p. 978-981

Paper in proceeding

2010

Linearization of Efficiency-Optimized Dynamic Load Modulation Transmitter Architectures

Haiying Cao, Hossein Mashad Nemati, Ali Soltani Tehrani et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 58 (4), p. 873-881

Journal article

2010

Anisotropic transport properties in InAs/AlSb heterostructures

Giuseppe Moschetti, Huan Zhao Ternehäll, Per-Åke Nilsson et al

Applied Physics Letters. Vol. 97 (24), p. 3-

Journal article

2010

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

Giuseppe Moschetti, Per-Åke Nilsson, Ludovic Desplanque et al

International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010, p. 321-324

Paper in proceeding

2010

Evaluation of a GaN HEMT transistor for load- and supply-modulation applications using intrinsic waveform measurements

Hossein Mashad Nemati, Alan L. Clarke, Steve C. Cripps et al

IEEE MTT-S International Microwave Symposium Digest, p. 509-512

Paper in proceeding

2010

Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study

H. Rodilla, T. Gonzalez, Mikael Malmkvist et al

Paper in proceeding

2009

Gate-recess Technology for InAs/AlSb HEMTs

Eric Lefebvre, Mikael Malmkvist, Malin Borg et al

IEEE Transactions on Electron Devices. Vol. 56 (9), p. 1904-1911

Journal article

2009

Narrow band gap III-V based-FET for ultra low power high frequency analog applications

Gilles Dambrine, Sylvain Bollaert, Y. Roellens et al

2009 67th Annual Device Research Conference (DRC), p. 149-51

Paper in proceeding

2009

Epitaxial optimization of 130 nm gate-length InGaAs/InAlAs/InP HEMTs for low-noise applications

Mikael Malmkvist, Shu Min Wang, Jan Grahn

IEEE Transactions on Electron Devices. Vol. 56 (1), p. 126-131

Journal article

2009

InAs/AlSb HEMTs characterised at cryogenic temperatures

Per-Åke Nilsson, Giuseppe Moschetti, Niklas Wadefalk et al

WOCSDICE 2009

Paper in proceeding

2009

DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

Giuseppe Moschetti, Per-Åke Nilsson, Niklas Wadefalk et al

2009 IEEE International Conference on Indium Phosphide & Related Materials, p. 323-5

Paper in proceeding

2008

Epitaxial optimization of 130-nm gate-length InGaAs/InAlAs HEMTs for high-frequency applications

Mikael Malmkvist, Shu Min Wang, Jan Grahn

IEEE Transactions on Electron Devices. Vol. 55 (1), p. pp. 268-275

Journal article

2008

Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain

Malin Borg, Eric Lefebvre, Mikael Malmkvist et al

Solid-State Electronics. Vol. 52 (5), p. 775-781

Journal article

2008

Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

Mikael Malmkvist, Eric Lefebvre, Malin Borg et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (12), p. 2685-2691

Journal article

2008

GigaHertz Symposium 2008

Jan Grahn

Edited book

2007

Development of InAs/AlSb HEMT technology for high-frequency operation

Jan Grahn, Eric Lefebvre, Malin Borg et al

Proc. European Workshop on Compound Semiconductor Devices and Integrated Circuits, p. pp. 137-140

Paper in proceeding

2007

(Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs

Eric Lefebvre, Malin Borg, Mikael Malmkvist et al

Proc. 19th Indium Phosphide and Related Materials, p. pp. 125-128

Paper in proceeding

2007

DC and RF performance of 0.2-0.4µm gate length InAs/AlSb HEMTs

Malin Borg, Eric Lefebvre, Mikael Malmkvist et al

Proc. 19th Indium Phosphide and Related Materials, p. pp. 67-70

Paper in proceeding

2007

Characterization of insulated-gate versus Schottky-gate InAs/AlSb HEMTs

Mikael Malmkvist, Eric Lefebvre, Malin Borg et al

Proc. European Microwave Integrated Circuit Conference (EuMIC), p. pp. 24-27

Paper in proceeding

2007

Benchmarking of low band gap III-V based HEMTs and sub-100nm CMOS under low drain voltage regime

Sylvain Bollaert, Ludovic Desplanque, Xavier Wallart et al

Proc. European Microwave Integrated Circuit Conference (EuMIC), p. pp. 20-23

Paper in proceeding

2007

Chalmers Center for High-Speed Technology - CHACH: Final Report 1995-2006

Jan Grahn

Report

2006

Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InP HEMT MMIC technology

Mikael Malmkvist, Anders Mellberg, Niklas Rorsman et al

Solid State Electronics. Vol. 50 (5), p. 858-864

Journal article

2006

Physical Simulations of Pseudomorphic InP HEMTs

Martin Fagerlind, Hans Hjelmgren, Mikael Malmkvist et al

WOCSDICE 2006, Fiskebäckskil, Sweden, p. 101-103

Other conference contribution

2006

An SiC MESFET-based MMIC process

Mattias Sudow, Kristoffer Andersson, Niklas Billström et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 54 (12, Part 1), p. 4072-4078

Journal article

2006

A comparison of cryogenically cooled pseudomorphic and lattice matched InP HEMTs: Implementation in an ultra-low noise amplifier

Anna Malmros, Niklas Wadefalk, Piotr Starski et al

Asia Pacific Microwave Conference

Paper in proceeding

2006

Noise optimization of InP HEMTs

Mikael Malmkvist, Anna Malmros, Niklas Wadefalk et al

Proc. European Workshop on Compound Semiconductor Devices and Integrated Circuits, p. 97-99

Paper in proceeding

2006

Effect of Schottky layer thickness on DC, RF and noise of 70-nm gate length InP HEMTs

Mikael Malmkvist, Malin Borg, Shu Min Wang et al

18th International Conference on Indium Phosphide and Related Materials, pp. 386-388, p. 329-331

Paper in proceeding

2006

Novel devices for (sub)millimeter-wave space applications

Jan Grahn, Piotr Starski, Jan Stake et al

IEICE Trans. Electronics. Vol. E89 (C(7)), p. 891-897

Journal article

2005

A W-band MMIC amplifier using 70-nm gate length InP HEMT technology

Mikael Malmkvist, Anders Mellberg, Jan Grahn

35th European Microwave Conference

Paper in proceeding

2005

Novel devices for (sub)millimeter-wave space applications

Jan Grahn, Jan Stake, Serguei Cherednichenko

Proceed. 6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005), p. 20-21

Paper in proceeding

2005

Scaling of epitaxial layers in a 70 nm gate length InGaAs-InAlAs-InP HEMT technology

Malin Borg, Shu Min Wang, Jan Grahn

Proceed. GigaHertz 2005 Conference, p. 155-158

Other conference contribution

2005

Fabrication of InP HEMTs for cryogenically cooled low noise amplifiers

Anna Malmros, Piotr Starski, Jan Grahn

Proceed. GigaHertz 2005 conference, p. 266-269

Other conference contribution

2005

Optimization of sub-100 nm InP HEMT technology

Jan Grahn, Malin Fridman, Mikael Malmkvist et al

Proceed. 16th Symp. on Space-Terahertz Technology, p. 132-

Paper in proceeding

2005

W-band MMIC amplifier using pseudomorphic InP HEMT wiht sub 100-nm gate length

Mikael Malmkvist, Anders Mellberg, Jan Grahn

Gigahertz 2005

Other conference contribution

2005

Vertical scaling of gate-to-channel distance for a 70 nm InP pseudomorphic HEMT technology

Malin Borg, Jan Grahn, Shu Min Wang et al

Proceed. of Conf on InP and Related Materials (IPRM'05), p. 204-207

Paper in proceeding

2005

InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

Jan Grahn, Piotr Starski, Mikael Malmkvist et al

Proceed. of Conf on InP and Related Materials (IPRM'05), p. 124-128

Paper in proceeding

2004

A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifier

Mikael Malmkvist, Anders Mellberg, Jan Grahn et al

16th International Conference on Indium Phosphide and Related Materials, p. 386-388

Paper in proceeding

2004

Integration of components in a 50 nm {InGaAs}-{InAlAs}-{InP} {HEMT} process with pseudomorphic $\rm{In}_{0.35}{Ga}_{0.35}{As}$ channel

Anders Mellberg, Mikael Malmkvist, Jan Grahn et al

Proc. 34th European Microwave Conf., p. 171-174

Paper in proceeding

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Showing 10 research projects

2023–2026

Channel noise in two-dimensional field-effect electron devices