Jan Grahn

Professor at Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

I am professor in Microwave Devices at the Department of Microtechnology and Nanoscience - MC2. I am exploring new technology for low-noise high-speed transistors in high-frequency receivers. I have almost twenty years of experience in both Si BJT/SiGe HBT and III-V FET technology at KTH Royal Institute of Technology and Chalmers University of Technology, respectively. Since 2001, I have been working on InGaAs/InAlAs/InP HEMTs for ultra-low noise microwave/ mm-wave LNAs, InAs/AlSb HEMTs for ultra-low power microwave/mm-wave circuits and (in an EU FP7 project) InAs diodes for THz detectors. I am currently leading a group consisting of PhD students, research engineers and technicians in the search for low(er) noise where intense collaboration with Low Noise Factory AB is a true success story.During more than twelve years, I have also been devoted to leadership in academy-industrial collaborations. Since 2007, I am leading the GHz Centre between Chalmers and a large team of companies to focus on joint key issues in RF/microwave research: How to improve efficiency in transmitters for 4G+, the implementation of GaN HEMT technology in industrially-accepted RF/MW designs as well as cutting-edge compound semiconductor technology for extremely demanding applications in science and space up to THz. To see assistant and associate Professors and their students to grow through such collaborations is a true benefit in my work.I am member of the General Assembly in European Microwave Association and a senior member in IEEE. I am or have been prime grant holder at Chalmers for 13 research projects from external funding sources. Year 2010-2012, I was Area of Advance Leader for Information and Communication Technology (ICT) directly under Vice President of Chalmers. In 2008, I acted General Chairman for the GigaHertz Symposium which up to date is the largest Swedish microwave conference.

Source: chalmers.se

Projects

2016–2016

Super/semiconductor quantum-noise-limited broadband amplifier (SuperSemiQ)

Jonas Bylander Quantum Device Physics
Jan Grahn Microwave Electronics
Chalmers

2016–2018

Tillförlitliga kylda mikrovågsförstärkare

Jan Grahn Microwave Electronics
VINNOVA

2010–2013

Semiconductor Nanodevices for Room temperature THz Emission and Detection (ROOTHz)

Jan Grahn Microwave Electronics
European Commission (FP7)

2013–2016

Ultra-low power transitors for millimetre-wave amplification

Jan Grahn Microwave Electronics
Swedish Research Council (VR)

There might be more projects where Jan Grahn participates, but you have to be logged in as a Chalmers employee to see them.

Publications

2017

Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

Joel Schleeh, M. A. McCulloch, Jan Grahn et al
Journal of Astronomical Telescopes, Instruments, and Systems. Vol. 3 (1)
Journal article
2016

10 K Room Temperature LNA for SKA Band 1

Jan Grahn, Per-Åke Nilsson, Joel Schleeh et al
Journal of Logic and Computation. Vol. 2016 - August, p. Art no 7540344-
Paper in proceedings
2016

Cryogenic low-noise InP HEMTs: A source-drain distance study

Göran Alestig, Joel Schleeh, Giuseppe Moschetti et al
2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-
Paper in proceedings
2015

Experimental analysis of shot-noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature

Ó García-Pérez, Andreas Westlund, T. Gonzalez et al
Paper in proceedings
2015

Erratum: “On the effect of δ-doping in self-switching diodes” [Appl. Phys. Lett. 105, 093505 (2014)]

X. Wallart, Andreas Westlund, G. Ducournau et al
Applied Physics Letters. Vol. 106, p. 199902-
Journal article
2015

Shot-noise suppression effects in InGaAs planar diodes at room temperature

Jan Grahn, Andreas Westlund, Susana Muñoz Pérez et al
Journal of Physics: Conference Series. Vol. 647 (1)
Paper in proceedings
2015

Cryogenic Kink Effect in InP pHEMTs: A Pulsed Measurements Study

Jan Grahn, Per-Åke Nilsson, Helena Rodilla et al
IEEE Transactions on Electron Devices. Vol. 62 (2), p. 532-537
Journal article
2015

Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties

L. Desplanque, Andreas Westlund, C. Gaquière et al
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. Vol. 33 (2), p. 021207-
Journal article
2015

Graphene self-switching diodes as zero-bias microwave detectors

Per-Åke Nilsson, Jan Grahn, Andreas Westlund et al
Applied Physics Letters. Vol. 106 (9), p. 093116-
Journal article
2015

Zero-Bias Self-Switching In65Ga35As channel Diodes for Terahertz Detection,

P. Sangaré, C. Gaquière, Andreas Westlund et al
IEEE International Conference on Indium Phosphide and Related Materials Conference Proceedings 2015. Vol. CSW 2015, p. 82-83
Paper in proceedings
2015

Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

Andreas Westlund, J. Mateos, Ignacio Íñiguez-De-La-Torre et al
Journal of Physics: Conference Series. Vol. 647 (1)
Paper in proceedings
2015

Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process

Bengt Nilsson, Arsalan Pourkabirian, Niklas Wadefalk et al
Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. Vol. 1, p. Art. no. 7411746-
Paper in proceedings
2015

Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties

L. Desplanque, Jan Grahn, P. Sangaré et al
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. Vol. 33 (2), p. 021207-
Journal article
2015

SWI 1200/600 GHz Highly Integrated Receiver Front-Ends

Aik-Yean Tang, Niklas Wadefalk, Jan Stake et al
36th ESA Antenna Workshop on Antennas and RF Systems for Space Science, ESA/ESTEC ,Noordwijk, The Netherlands; 6-9 Oct. 2015. Vol. session S3.1.2
Paper in proceedings
2015

Phonon black-body radiation limit for heat dissipation in electronics

Ignacio Íñiguez-De-La-Torre, Joel Schleeh, Per-Åke Nilsson et al
Nature Materials. Vol. 14 (2), p. 187-192
Journal article
2015

Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

Per-Åke Nilsson, I. Iniguez-de-la-Torre, L. Desplanque et al
Solid-State Electronics. Vol. 104 (Feb), p. 79-85
Journal article
2015

Graphene self-switching diodes as zero-bias microwave detectors

Jan Grahn, Per-Åke Nilsson, Andreas Westlund et al
Applied Physics Letters. Vol. 106 (9), p. 093116-
Journal article
2015

Errautm: "graphene self-switching diodes as zero-bias microwave detectors" (Applied Physics Letters (2015) 106 (093116)

Per-Åke Nilsson, Andreas Westlund, J. Hassan et al
Applied Physics Letters. Vol. 106 (15)
Journal article
2014

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

Mikael Malmkvist, Giuseppe Moschetti, Jan Grahn et al
Semiconductor Science and Technology. Vol. 29 (3)
Journal article
2014

Cryogenic noise performance of InGAAs/InAlAs HEMTs grown on InP and GaAs substrate

Jan Grahn, Joel Schleeh, Per-Åke Nilsson et al
Solid-State Electronics. Vol. 91, p. 74-77
Journal article
2014

Low noise GaAs Schottky TMIC and InP HEMT MMIC based Receivers for the ISMAR and SWI Instruments

Axel Murk, Anders Emrich, Huan Zhao Ternehäll et al
Paper in proceedings
2014

An InP MMIC process optimized for low noise at Cryo

Herbert Zirath, Jan Grahn, Per-Åke Nilsson et al
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Paper in proceedings
2014

Reliability Assessment of Mixers, Multipliers and Low Noise Amplifiers for Space Applications

Jan Grahn, Anders Emrich, Tomas Bryllert et al
Paper in proceedings
2014

On the effect of delta-doping in self-switching diodes

P. Sangare, C. Gaquiere, X. Wallart et al
Applied Physics Letters. Vol. 105 (9), p. Article Number: 093505 -
Journal article
2013

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

X. Wallart, Giuseppe Moschetti, Per-Åke Nilsson et al
Solid-State Electronics. Vol. 79, p. 268-273
Journal article
2013

Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT

Jan Grahn, Niklas Wadefalk, Helena Rodilla et al
2013 International Conference on Indium Phosphide and Related Materials
Paper in proceedings
2013

Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study

Niklas Wadefalk, J. Mateos, Helena Rodilla et al
IEEE Transactions on Electron Devices. Vol. 60 (5), p. 1625-1631
Journal article
2013

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

C. Gaquiere, Per-Åke Nilsson, G. Ducournau et al
Applied Physics Letters. Vol. 103 (13)
Journal article
2013

Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes

Per-Åke Nilsson, X. Wallart, Giuseppe Moschetti et al
2013 International Conference on Indium Phosphide and Related Materials
Paper in proceedings
2013

Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications

Piotr Starski, Joel Schleeh, Jan Grahn et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 61 (2), p. 871-877
Journal article
2013

DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation

Eric Lefebvre, X. Wallart, Jan Grahn et al
Solid-State Electronics. Vol. 87, p. 85-89
Journal article
2013

Influence of gate-channel distance in low-noise InP HEMTs

Jan Grahn, Per-Åke Nilsson, Helena Rodilla et al
2013 International Conference on Indium Phosphide and Related Materials
Paper in proceedings
2013

Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs

Per-Åke Nilsson, Niklas Wadefalk, Joel Schleeh et al
IEEE Transactions on Electron Devices. Vol. 60 (1), p. 206-212
Journal article
2013

200 GHz communication system using unipolar InAs THz rectifiers

Per-Åke Nilsson, X. Wallart, L. Desplanque et al
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Paper in proceedings
2013

Room temperature THz detection and emission with semiconductor nanodevices

Ana Íñiguez-De-La Torre, T. Gonzalez, Andreas Westlund et al
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013, p. 215-218
Paper in proceedings
2012

European Microwaves

Jan Grahn, R. Sorrentino
IEEE Microwave Magazine. Vol. 13 (6), p. 65-79
Journal article
2012

Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs

L. Desplanque, Niklas Wadefalk, Jan Grahn et al
15th European Microwave Week - Space for Microwaves Conference Proceedings. Amsterdam, NETHERLANDS. OCT 28-NOV 02, 2012, p. 373-376
Paper in proceedings
2012

Source-drain scaling of ion-implanted InAs/AlSb HEMTs

X. Wallart, Giuseppe Moschetti, Per-Åke Nilsson et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 57-60
Paper in proceedings
2012

Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

J. Mateos, T. Gonzalez, Jan Grahn et al
Semiconductor Science and Technology. Vol. 27 (1), p. 015008-
Journal article
2012

Fabrication and DC characterization of InAs/AlSb self-switching diodes

Per-Åke Nilsson, Jan Grahn, Huan Zhao Ternehäll et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 65-68
Paper in proceedings
2012

Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

Beatriz G. Vasallo, J. Mateos, Helena Rodilla et al
Semiconductor Science and Technology. Vol. 27 (6), p. Article Number: 065018-
Journal article
2012

Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature

Herbert Zirath, Jan Grahn, Bengt Nilsson et al
Journal of Logic and Computation
Paper in proceedings
2012

Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications

X. Wallart, Per-Åke Nilsson, Jan Grahn et al
IEEE Microwave and Wireless Components Letters. Vol. 22 (3), p. 144-146
Journal article
2012

Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Piotr Starski, Jan Grahn, Anna Malmros et al
IEEE Electron Device Letters. Vol. 33 (5), p. 664-666
Journal article
2012

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque, Giuseppe Moschetti, Y. Wang et al
Applied Physics Letters. Vol. 100 (26)
Journal article
2012

Planar InAs/AlSb HEMTs With Ion-Implanted Isolation

L. Desplanque, X. Wallart, Per-Åke Nilsson et al
IEEE Electron Device Letters. Vol. 33 (4), p. 510-512
Journal article
2012

Optimized InP HEMTs for low noise at cryogenic temperatures

Joel Schleeh, Helena Rodilla, Jan Grahn et al
24th International Conference on Indium Phosphide & Related Materials (IPRM), p. 241-244
Paper in proceedings
2012

Highly linear 1-3 GHz GaN HEMT low-noise amplifier

Jan Grahn, Kristoffer Andersson, Pirooz Chehrenegar et al
Journal of Logic and Computation
Paper in proceedings
2011

Design and characterization of a highly linear 3 GHz GaN HEMT amplifier

Niklas Rorsman, Jan Grahn, Olle Axelsson et al
Paper in proceedings
2011

Monte Carlo study of the noise performance of isolated-gate InAs HEMTs

H. Rodilla, Jan Grahn, T. Gonzalez et al
21st International Conference on Noise and Fluctuations, ICNF 2011; Toronto, ON; 12 June 2011 through 16 June 2011, p. 184-187
Paper in proceedings
2011

InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation

S. Bollaert, F. Danneville, Y. Roelens et al
Solid-State Electronics. Vol. 64 (1), p. 47-53
Journal article
2011

Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection

Y.Alimi, Giuseppe Moschetti, Per-Åke Nilsson et al
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on (2-7 Oct. 2011), p. 1-2
Paper in proceedings
2011

Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

T. Gonzalez, J. Mateos, H. Rodilla et al
Semiconductor Science and Technology. Vol. 26 (2)
Journal article
2011

Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

Beatriz G. Vasallo, Helena Rodilla, J. Mateos et al
Paper in proceedings
2011

Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition

Per-Åke Nilsson, Jan Grahn, Ramvall P. et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011
Paper in proceedings
2011

Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs

Helena Rodilla, Jan Grahn, Giuseppe Moschetti et al
Paper in proceedings
2011

Optimization of MBE-grown AlSb/InAs High Electron Mobility Transistor Structures

Per-Åke Nilsson, Giuseppe Moschetti, Shu Min Wang et al
16th European MBE conference, France, p. 133-134
Paper in proceedings
2011

Monte carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors

T. Gonzalez, Giuseppe Moschetti, Jan Grahn et al
Journal of Logic and Computation. Vol. 119 (2), p. 222-224
Paper in proceedings
2010

Linearization of Efficiency-Optimized Dynamic Load Modulation Transmitter Architectures

Thomas Eriksson, Hossein Mashad Nemati, Haiying Cao et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 58 (4), p. 873-881
Journal article
2010

Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study

J. Mateos, Giuseppe Moschetti, Jan Grahn et al
International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010, p. 333-336
Paper in proceedings
2010

Band-reconfigurable LDMOS power amplifier

Hossein Mashad Nemati, Christian Fager, Jan Grahn
2010 European Microwave Conference, p. 978-981
Paper in proceedings
2010

Anisotropic transport properties in InAs/AlSb heterostructures

Shu Min Wang, Alexei Kalaboukhov, Per-Åke Nilsson et al
Applied Physics Letters. Vol. 97 (24), p. 3-
Journal article
2010

Evaluation of a GaN HEMT transistor for load- and supply-modulation applications using intrinsic waveform measurements

Jan Grahn, Herbert Zirath, Steve C. Cripps et al
Journal of Logic and Computation, p. 509-512
Paper in proceedings
2010

Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

Jan Grahn, Giuseppe Moschetti, Beatriz G. Vasallo et al
Journal of Applied Physics. Vol. 108 (9)
Journal article
2010

Linearization of Efficiency-Optimized Dynamic Load Modulation Transmitter Architectures

Haiying Cao, Hossein Mashad Nemati, Ali Soltani Tehrani et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 58 (4), p. 873-881
Journal article
2010

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

Giuseppe Moschetti, Ludovic Desplanque, Per-Åke Nilsson et al
International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010, p. 321-324
Paper in proceedings
2010

Sb-HEMT: Toward 100-mV Cryogenic Electronics

N. Waldhoff, A. Olivier, S. Lepilliet et al
IEEE Transactions on Electron Devices. Vol. 57 (8), p. 1903-1909
Journal article
2010

Evaluation of a GaN HEMT transistor for load- and supply-modulation applications using intrinsic waveform measurements

Johannes Benedikt., Herbert Zirath, Paul J. Tasker et al
Journal of Logic and Computation, p. 509-512
Paper in proceedings
2009

Epitaxial optimization of 130 nm gate-length InGaAs/InAlAs/InP HEMTs for low-noise applications

Shu Min Wang, Mikael Malmkvist, Jan Grahn
IEEE Transactions on Electron Devices. Vol. 56 (1), p. 126-131
Journal article
2009

InAs/AlSb HEMTs characterised at cryogenic temperatures

A. Noudeviwa, Jan Grahn, Sylvain Bollaert et al
Paper in proceedings
2009

Gate-recess Technology for InAs/AlSb HEMTs

Gilles Dambrine, Jan Grahn, Sylvain Bollaert et al
IEEE Transactions on Electron Devices. Vol. 56 (9), p. 1904-1911
Journal article
2009

DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

Per-Åke Nilsson, Eric Lefebvre, Jan Grahn et al
2009 IEEE International Conference on Indium Phosphide & Related Materials, p. 323-5
Paper in proceedings
2009

Narrow band gap III-V based-FET for ultra low power high frequency analog applications

Y. Roellens, Per-Åke Nilsson, Jan Grahn et al
2009 67th Annual Device Research Conference (DRC), p. 149-51
Paper in proceedings
2008

Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

Gilles Dambrine, Sylvain Bollaert, Ludovic Desplanque et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 56 (12), p. 2685-2691
Journal article
2008

GigaHertz Symposium 2008

Jan Grahn
Edited book
2008

Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain

Malin Borg, Gilles Dambrine, Alain Cappy et al
Solid-State Electronics. Vol. 52 (5), p. 775-781
Journal article
2008

Epitaxial optimization of 130-nm gate-length InGaAs/InAlAs HEMTs for high-frequency applications

Shu Min Wang, Mikael Malmkvist, Jan Grahn
IEEE Transactions on Electron Devices. Vol. 55 (1), p. pp. 268-275
Journal article
2007

(Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs

Eric Lefebvre, Alain Cappy, Mikael Malmkvist et al
Proc. 19th Indium Phosphide and Related Materials, p. pp. 125-128
Paper in proceedings
2007

Characterization of insulated-gate versus Schottky-gate InAs/AlSb HEMTs

Gilles Dambrine, Ludovic Desplanque, Eric Lefebvre et al
Proc. European Microwave Integrated Circuit Conference (EuMIC), p. pp. 24-27
Paper in proceedings
2007

DC and RF performance of 0.2-0.4µm gate length InAs/AlSb HEMTs

Jan Grahn, Eric Lefebvre, Mikael Malmkvist et al
Proc. 19th Indium Phosphide and Related Materials, p. pp. 67-70
Paper in proceedings
2007

Benchmarking of low band gap III-V based HEMTs and sub-100nm CMOS under low drain voltage regime

Sylvain Bollaert, Yannick Roelens, Malin Borg et al
Proc. European Microwave Integrated Circuit Conference (EuMIC), p. pp. 20-23
Paper in proceedings
2007

Development of InAs/AlSb HEMT technology for high-frequency operation

Sylvain Bollaert, Gilles Dambrine, Xavier Wallart et al
Proc. European Workshop on Compound Semiconductor Devices and Integrated Circuits, p. pp. 137-140
Paper in proceedings
2006

Physical Simulations of Pseudomorphic InP HEMTs

Martin Fagerlind, Hans Hjelmgren, Jan Grahn et al
WOCSDICE 2006, Fiskebäckskil, Sweden, p. 101-103
Conference contribution
2006

Noise optimization of InP HEMTs

Mikael Malmkvist, Jan Grahn, Piotr Starski et al
Proc. European Workshop on Compound Semiconductor Devices and Integrated Circuits, p. 97-99
Paper in proceedings
2006

Novel devices for (sub)millimeter-wave space applications

Piotr Starski, Jan Stake, Serguei Cherednichenko et al
IEICE Trans. Electronics. Vol. E89 (C(7)), p. 891-897
Journal article
2006

Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InP HEMT MMIC technology

Mikael Malmkvist, Jan Grahn, Anders Mellberg et al
Solid State Electronics. Vol. 50 (5), p. 858-864
Journal article
2006

An SiC MESFET-based MMIC process

Mattias Sudow, Kristoffer Andersson, Herbert Zirath et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 54 (12, Part 1), p. 4072-4078
Journal article
2006

Effect of Schottky layer thickness on DC, RF and noise of 70-nm gate length InP HEMTs

Malin Borg, Shu Min Wang, Mikael Malmkvist et al
18th International Conference on Indium Phosphide and Related Materials, pp. 386-388, p. 329-331
Paper in proceedings
2005

Fabrication of InP HEMTs for cryogenically cooled low noise amplifiers

Jan Grahn, Piotr Starski, Anna Malmros
Proceed. GigaHertz 2005 conference, p. 266-269
Conference contribution
2005

W-band MMIC amplifier using pseudomorphic InP HEMT wiht sub 100-nm gate length

Anders Mellberg, Mikael Malmkvist, Jan Grahn
Conference contribution
2005

A W-band MMIC amplifier using 70-nm gate length InP HEMT technology

Mikael Malmkvist, Jan Grahn, Anders Mellberg
Paper in proceedings
2005

Optimization of sub-100 nm InP HEMT technology

Jan Grahn, Mikael Malmkvist, Anders Mellberg et al
Proceed. 16th Symp. on Space-Terahertz Technology, p. 132-
Paper in proceedings
2005

Vertical scaling of gate-to-channel distance for a 70 nm InP pseudomorphic HEMT technology

Anders Mellberg, Jan Grahn, Herbert Zirath et al
Proceed. of Conf on InP and Related Materials (IPRM'05), p. 204-207
Paper in proceedings
2005

Scaling of epitaxial layers in a 70 nm gate length InGaAs-InAlAs-InP HEMT technology

Jan Grahn, Malin Borg, Shu Min Wang
Proceed. GigaHertz 2005 Conference, p. 155-158
Conference contribution
2005

Novel devices for (sub)millimeter-wave space applications

Serguei Cherednichenko, Jan Grahn, Jan Stake
Proceed. 6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005), p. 20-21
Paper in proceedings
2005

InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

Malin Fridman, Shu Min Wang, Anna Malmros et al
Proceed. of Conf on InP and Related Materials (IPRM'05), p. 124-128
Paper in proceedings
2004

A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifier

Herbert Zirath, Mikael Malmkvist, Anders Mellberg et al
16th International Conference on Indium Phosphide and Related Materials, p. 386-388
Paper in proceedings
2004

Integration of components in a 50 nm {InGaAs}-{InAlAs}-{InP} {HEMT} process with pseudomorphic $\rm{In}_{0.35}{Ga}_{0.35}{As}$ channel

Niklas Rorsman, Herbert Zirath, Anders Mellberg et al
Proc. 34th European Microwave Conf., p. 171-174
Paper in proceedings