Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors
Journal article, 2010
hemts
performance
semiconductors
transport
impact ionization
inas
simulation
noise
holes
Author
Beatriz G. Vasallo
University of Salamanca
H. Rodilla
University of Salamanca
T. Gonzalez
University of Salamanca
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
J. Mateos
University of Salamanca
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 108 9 094505Semiconductor Nanodevices for Room temperature THz Emission and Detection (ROOTHz)
European Commission (EC) (EC/FP7/243845), 2010-01-01 -- 2013-01-31.
Subject Categories
Physical Sciences
DOI
10.1063/1.3503430