Chalmers Research: Giuseppe Moschetti

2023

Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation

Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti et al

IEEE Transactions on Electron Devices. Vol. 70 (5), p. 2431-2436

Journal article

2020

A 300-mu W Cryogenic HEMT LNA for Quantum Computing

Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti et al

PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), p. 1299-1302

Paper in proceeding

2020

A 300-µW Cryogenic HEMT LNA for Quantum Computing

Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti et al

IEEE MTT-S International Microwave Symposium Digest. Vol. 2020-August, p. 1299-1302

Paper in proceeding

2019

Strong Geometrical Magnetoresistance and Angular Dependence in InP HEMTs for cryogenic LNAs

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al

Other conference contribution

2019

Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Giuseppe Moschetti et al

IIS UTokyo SYMPOSIUM No.100

Paper in proceeding

2019

On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al

AIP Advances. Vol. 9 (8)

Journal article

2018

Magnetic Influence on CryogenicInP HEMT LNAs

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al

Other conference contribution

2018

Magnetic Influence on Cryogenic InP HEMT DC Characteristics

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al

CSW 2018 Proceedings, p. 183-183

Other conference contribution

2018

0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers

Eunjung Cha, Niklas Wadefalk, Per Ake Nilsson et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (11), p. 4860-4869

Journal article

2017

Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K

Yulung Tang, Niklas Wadefalk, J. Kooi et al

IEEE MTT-S International Microwave Symposium Digest, p. 176-179

Paper in proceeding

2017

Cryogenic LNAs for SKA band 2 to 5

Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al

IEEE MTT-S International Microwave Symposium Digest, p. 164-167

Paper in proceeding

2017

Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs

Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 65 (12), p. 5171-5180

Journal article

2017

Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs

Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al

IEEE MTT-S International Microwave Symposium Digest, p. 168-171

Paper in proceeding

2016

Cryogenic low-noise InP HEMTs: A source-drain distance study

Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al

2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-

Paper in proceeding

2014

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

Eric Lefebvre, Giuseppe Moschetti, Mikael Malmkvist et al

Semiconductor Science and Technology. Vol. 29 (3)

Journal article

2014

RBS channeling measurement of damage annealing in InAs/AlSb HEMT structures

A. Hallen, Giuseppe Moschetti

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. Vol. 332, p. 172-175

Journal article

2013

Cryogenic DC Characterization of InAs/Al80Ga20Sb Self-Switching Diodes

Andreas Westlund, Giuseppe Moschetti, Per-Åke Nilsson et al

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Paper in proceeding

2013

DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation

Giuseppe Moschetti, Eric Lefebvre, Martin Fagerlind et al

Solid-State Electronics. Vol. 87, p. 85-89

Journal article

2013

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

Giuseppe Moschetti, Morteza Abbasi, Per-Åke Nilsson et al

Solid-State Electronics. Vol. 79, p. 268-273

Journal article

2012

Fabrication and DC characterization of InAs/AlSb self-switching diodes

Andreas Westlund, Giuseppe Moschetti, Huan Zhao Ternehäll et al

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 65-68

Paper in proceeding

2012

Planar InAs/AlSb HEMTs With Ion-Implanted Isolation

Giuseppe Moschetti, Per-Åke Nilsson, A. Hallen et al

IEEE Electron Device Letters. Vol. 33 (4), p. 510-512

Journal article

2012

Source-drain scaling of ion-implanted InAs/AlSb HEMTs

Giuseppe Moschetti, Per-Åke Nilsson, A. Hallen et al

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, p. 57-60

Paper in proceeding

2012

Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

Beatriz G. Vasallo, Helena Rodilla, T. Gonzalez et al

Semiconductor Science and Technology. Vol. 27 (6), p. Article Number: 065018-

Journal article

2012

Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications

Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al

IEEE Microwave and Wireless Components Letters. Vol. 22 (3), p. 144-146

Journal article

2012

Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs

Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al

15th European Microwave Week - Space for Microwaves Conference Proceedings. Amsterdam, NETHERLANDS. OCT 28-NOV 02, 2012, p. 373-376

Paper in proceeding

2012

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque, S. El Kazzi, J. L. Codron et al

Applied Physics Letters. Vol. 100 (26)

Journal article

2012

Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

Giuseppe Moschetti

Doctoral thesis

2012

Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

Helena Rodilla, T. Gonzalez, Giuseppe Moschetti et al

Semiconductor Science and Technology. Vol. 27 (1), p. 015008-

Journal article

2011

Optimization of MBE-grown AlSb/InAs High Electron Mobility Transistor Structures

Huan Zhao Ternehäll, Giuseppe Moschetti, Shu Min Wang et al

16th European MBE conference, France, p. 133-134

Paper in proceeding

2011

Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs

Helena Rodilla, T. Gonzalez, J. Mateos et al

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February through 11 February

Paper in proceeding

2011

Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

Beatriz G. Vasallo, Helena Rodilla, T. Gonzalez et al

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February 2011 through 11 February

Paper in proceeding

2011

Monte carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors

Beatriz G. Vasallo, H. Rodilla, T. Gonzalez et al

Acta Physica Polonica A. Vol. 119 (2), p. 222-224

Paper in proceeding

Show project

2011

InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation

Giuseppe Moschetti, Niklas Wadefalk, Per-Åke Nilsson et al

Solid-State Electronics. Vol. 64 (1), p. 47-53

Journal article

2011

Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection

L.Q.Zhang, Y.Alimi, C.Balocco et al

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on (2-7 Oct. 2011), p. 1-2

Paper in proceeding

2011

Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

H. Rodilla, T. Gonzalez, Giuseppe Moschetti et al

Semiconductor Science and Technology. Vol. 26 (2)

Journal article

2011

Monte Carlo study of the noise performance of isolated-gate InAs HEMTs

H. Rodilla, Beatriz G. Vasallo, J. Mateos et al

21st International Conference on Noise and Fluctuations, ICNF 2011; Toronto, ON; 12 June 2011 through 16 June 2011, p. 184-187

Paper in proceeding

2010

Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

Beatriz G. Vasallo, H. Rodilla, T. Gonzalez et al

Journal of Applied Physics. Vol. 108 (9)

Journal article

Show project

2010

Sb-HEMT: Toward 100-mV Cryogenic Electronics

A. Noudeviwa, Y. Roelens, F. Danneville et al

IEEE Transactions on Electron Devices. Vol. 57 (8), p. 1903-1909

Journal article

2010

InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

Giuseppe Moschetti

Licentiate thesis

2010

Anisotropic transport properties in InAs/AlSb heterostructures

Giuseppe Moschetti, Huan Zhao Ternehäll, Per-Åke Nilsson et al

Applied Physics Letters. Vol. 97 (24), p. 3-

Journal article

2010

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

Giuseppe Moschetti, Per-Åke Nilsson, Ludovic Desplanque et al

International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010, p. 321-324

Paper in proceeding

2010

Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study

H. Rodilla, T. Gonzalez, Mikael Malmkvist et al

International Conference on Indium Phosphide and Related Materials. Proceedings. 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010; Kagawa; 31 May 2010 through 4 June 2010, p. 333-336

Paper in proceeding

2009

Narrow band gap III-V based-FET for ultra low power high frequency analog applications

Gilles Dambrine, Sylvain Bollaert, Y. Roellens et al

2009 67th Annual Device Research Conference (DRC), p. 149-51

Paper in proceeding

2009

InAs/AlSb HEMTs characterised at cryogenic temperatures

Per-Åke Nilsson, Giuseppe Moschetti, Niklas Wadefalk et al

WOCSDICE 2009

Paper in proceeding

2009

DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

Giuseppe Moschetti, Per-Åke Nilsson, Niklas Wadefalk et al

2009 IEEE International Conference on Indium Phosphide & Related Materials, p. 323-5

Paper in proceeding

2009

DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures

Giuseppe Moschetti

IEEE Indium Phosphide & Related Materials, 2009, p. 323 - 325

Paper in proceeding