A 300-µW Cryogenic HEMT LNA for Quantum Computing
Paper in proceedings, 2020

This paper reports on ultra-low power 4-8 GHz (C-band) InP high-electron mobility transistor (HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum computing. We have investigated dc power dissipation in hybrid three-stage cryogenic LNAs using 100-nm gate length InP HEMTs with different indium content in the channel (65% and 80%). The noise performance at 300 K was found to be comparable for both channel structures. At 5 K, an LNA with 65% indium channel exhibited significantly lower noise temperature at any dc power dissipation compared to the LNA with 80% indium channel. The LNA with 65% indium channel achieved an average noise of 3.2 K with 23 dB gain at an ultra-low power consumption of 300 μW. To the best of authors' knowledge, the LNA exhibited the lowest noise temperature to date for sub-milliwatt power cryogenic C-band LNAs.

Author

Eunjung Cha

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Niklas Wadefalk

Low Noise Factory AB

Giuseppe Moschetti

Qamcom Research & Technology

Arsalan Pourkabirian

Low Noise Factory AB

Jörgen Stenarson

Low Noise Factory AB

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

Vol. 2020-August 1299-1302 9223865

IEEE/MTT-S International Microwave Symposium (IMS) 2020
Los Angeles, CA, USA,

Areas of Advance

Transport

Subject Categories

Telecommunications

Information Science

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/IMS30576.2020.9223865

More information

Latest update

1/5/2021 1