A 300-µW Cryogenic HEMT LNA for Quantum Computing
Paper i proceeding, 2020

This paper reports on ultra-low power 4-8 GHz (C-band) InP high-electron mobility transistor (HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum computing. We have investigated dc power dissipation in hybrid three-stage cryogenic LNAs using 100-nm gate length InP HEMTs with different indium content in the channel (65% and 80%). The noise performance at 300 K was found to be comparable for both channel structures. At 5 K, an LNA with 65% indium channel exhibited significantly lower noise temperature at any dc power dissipation compared to the LNA with 80% indium channel. The LNA with 65% indium channel achieved an average noise of 3.2 K with 23 dB gain at an ultra-low power consumption of 300 μW. To the best of authors' knowledge, the LNA exhibited the lowest noise temperature to date for sub-milliwatt power cryogenic C-band LNAs.

Författare

Eunjung Cha

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Niklas Wadefalk

Low Noise Factory AB

Giuseppe Moschetti

Qamcom Research & Technology

Arsalan Pourkabirian

Low Noise Factory AB

Jörgen Stenarson

Low Noise Factory AB

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

Vol. 2020-August 1299-1302 9223865

IEEE/MTT-S International Microwave Symposium (IMS) 2020
Los Angeles, CA, USA,

Styrkeområden

Transport

Ämneskategorier

Telekommunikation

Systemvetenskap

Annan elektroteknik och elektronik

DOI

10.1109/IMS30576.2020.9223865

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Senast uppdaterat

2021-01-05