Arsalan Pourkabirian
Visar 13 publikationer
2019
On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field
Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al
AIP Advances. Vol. 9 (8)
Artikel i vetenskaplig tidskrift
2018
0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
Eunjung Cha, Niklas Wadefalk, Per Ake Nilsson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (11), p. 4860-4869
Artikel i vetenskaplig tidskrift
2018
Magnetic Influence on Cryogenic InP HEMT DC Characteristics
Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al
Paper i proceeding
2017
Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs
Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 65 (12), p. 5171-5180
Artikel i vetenskaplig tidskrift
2017
Cryogenic LNAs for SKA band 2 to 5
Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE MTT-S International Microwave Symposium Digest, p. 164-167
Paper i proceeding
2017
Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K
Yulung Tang, Niklas Wadefalk, J. Kooi et al
IEEE MTT-S International Microwave Symposium Digest, p. 176-179
Paper i proceeding
2016
Cryogenic low-noise InP HEMTs: A source-drain distance study
Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al
2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-
Paper i proceeding
2015
Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
Per-Åke Nilsson, Arsalan Pourkabirian, Joel Schleeh et al
Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. Vol. 1, p. Art. no. 7411746-
Paper i proceeding
2015
Probing the quantum vacuum with an artificial atom in front of a mirror
Io Chun Hoi, Anton Frisk Kockum, Lars Tornberg et al
Nature Physics. Vol. 11 (12), p. 1045-1049
Artikel i vetenskaplig tidskrift
2014
Nonequilibrium probing of two-level charge fluctuators using the step response of a single-electron transistor
Arsalan Pourkabirian, Martin Gustafsson, Göran Johansson et al
Physical Review Letters. Vol. 113 (25), p. 256801-
Artikel i vetenskaplig tidskrift
2013
Thermal properties of charge noise sources
Martin Gustafsson, Arsalan Pourkabirian, Göran Johansson et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 88 (24), p. Art. no. 245410-
Artikel i vetenskaplig tidskrift
2011
Observation of the dynamical Casimir effect in a superconducting circuit
Christopher Wilson, Göran Johansson, Arsalan Pourkabirian et al
Nature. Vol. 479 (7373), p. 376-9
Artikel i vetenskaplig tidskrift
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