Arsalan Pourkabirian

Publikationer (15)
Projekt (0)

Visar 15 publikationer

2020

A 300-µW Cryogenic HEMT LNA for Quantum Computing

Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti et al

IEEE MTT-S International Microwave Symposium Digest. Vol. 2020-August, p. 1299-1302

Paper i proceeding

2019

On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al

AIP Advances. Vol. 9 (8)

Artikel i vetenskaplig tidskrift

2019

Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Giuseppe Moschetti et al

IIS UTokyo SYMPOSIUM No.100

Paper i proceeding

2018

0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers

Eunjung Cha, Niklas Wadefalk, Per Ake Nilsson et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (11), p. 4860-4869

Artikel i vetenskaplig tidskrift

2018

Magnetic Influence on Cryogenic InP HEMT DC Characteristics

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al

Paper i proceeding

2017

Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs

Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 65 (12), p. 5171-5180

Artikel i vetenskaplig tidskrift

2017

Cryogenic LNAs for SKA band 2 to 5

Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al

IEEE MTT-S International Microwave Symposium Digest, p. 164-167

Paper i proceeding

2017

Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K

Yulung Tang, Niklas Wadefalk, J. Kooi et al

IEEE MTT-S International Microwave Symposium Digest, p. 176-179

Paper i proceeding

2016

Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process

Per-Åke Nilsson, Arsalan Pourkabirian, Joel Schleeh et al

Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. Vol. 1, p. Art. no. 7411746-

Paper i proceeding

2016

Cryogenic low-noise InP HEMTs: A source-drain distance study

Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al

2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-

Paper i proceeding

2015

Probing the quantum vacuum with an artificial atom in front of a mirror

Io Chun Hoi, Anton Frisk Kockum, Lars Tornberg et al

Nature Physics. Vol. 11 (12), p. 1045-1049

Artikel i vetenskaplig tidskrift

2014

Probing quantum and classical noise in nano circuits

Arsalan Pourkabirian

Doktorsavhandling

2014

Nonequilibrium probing of two-level charge fluctuators using the step response of a single-electron transistor

Arsalan Pourkabirian, Martin Gustafsson, Göran Johansson et al

Physical Review Letters. Vol. 113 (25), p. 256801-

Artikel i vetenskaplig tidskrift

2013

Thermal properties of charge noise sources

Martin Gustafsson, Arsalan Pourkabirian, Göran Johansson et al

Physical Review B - Condensed Matter and Materials Physics. Vol. 88 (24), p. Art. no. 245410-

Artikel i vetenskaplig tidskrift

2011

Observation of the dynamical Casimir effect in a superconducting circuit

Christopher Wilson, Göran Johansson, Arsalan Pourkabirian et al

Nature. Vol. 479 (7373), p. 376-9

Artikel i vetenskaplig tidskrift

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