Thermal properties of charge noise sources
Artikel i vetenskaplig tidskrift, 2013

Measurements of the temperature and bias dependence of single-electron transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low-temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.

Författare

Martin Gustafsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Arsalan Pourkabirian

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Göran Johansson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Tillämpad kvantfysik

John Clarke

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Per Delsing

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 88 24 Art. no. 245410- 245410

Styrkeområden

Nanovetenskap och nanoteknik

Infrastruktur

Nanotekniklaboratoriet

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1103/PhysRevB.88.245410

Mer information

Skapat

2017-10-08