Thermal properties of charge noise sources
Journal article, 2013

Measurements of the temperature and bias dependence of single-electron transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low-temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.

Author

Martin Gustafsson

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Arsalan Pourkabirian

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Göran Johansson

Chalmers, Microtechnology and Nanoscience (MC2), Applied Quantum Physics

John Clarke

Chalmers, Microtechnology and Nanoscience (MC2)

Per Delsing

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 88 24 Art. no. 245410- 245410

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Nanofabrication Laboratory

Subject Categories

Condensed Matter Physics

DOI

10.1103/PhysRevB.88.245410

More information

Created

10/8/2017