Arsalan Pourkabirian

Publications (24)
Projects (0)

Showing 24 publications

2023

Optimization of InGaAs Channel for Cryogenic InP HEMT Low-Noise Amplifiers

Junjie Li, Johan Bergsten, Arsalan Pourkabirian et al

Other conference contribution

2023

Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation

Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti et al

IEEE Transactions on Electron Devices. Vol. 70 (5), p. 2431-2436

Journal article

2022

Influence of Spacer Thickness on the Noise Performance in InP HEMTs for Cryogenic LNAs

Junjie Li, Arsalan Pourkabirian, Johan Bergsten et al

IEEE Electron Device Letters. Vol. 43 (7), p. 1029-1032

Journal article

2022

On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs

Junjie Li, Arsalan Pourkabirian, Johan Bergsten et al

Asia-Pacific Microwave Conference Proceedings, APMC, p. 10-12

Paper in proceeding

2021

Reduction of Noise Temperature in Cryogenic InP HEMT Low Noise Amplifiers with Increased Spacer Thickness in InAlAs-InGaAs-InP Heterostructures

Junjie Li, Arsalan Pourkabirian, Johan Bergsten et al

Other conference contribution

2020

A 300-mu W Cryogenic HEMT LNA for Quantum Computing

Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti et al

PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), p. 1299-1302

Paper in proceeding

2020

III-V HEMTs for cryogenic low noise amplifiers

Jan Grahn, Eunjung Cha, Arsalan Pourkabirian et al

Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2020-December, p. 25.6.1-25.6.4

Paper in proceeding

2020

A 300-µW Cryogenic HEMT LNA for Quantum Computing

Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti et al

IEEE MTT-S International Microwave Symposium Digest. Vol. 2020-August, p. 1299-1302

Paper in proceeding

2019

Strong Geometrical Magnetoresistance and Angular Dependence in InP HEMTs for cryogenic LNAs

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al

Other conference contribution

2019

Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Giuseppe Moschetti et al

IIS UTokyo SYMPOSIUM No.100

Paper in proceeding

2019

On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al

AIP Advances. Vol. 9 (8)

Journal article

2018

Magnetic Influence on CryogenicInP HEMT LNAs

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al

Other conference contribution

2018

Magnetic Influence on Cryogenic InP HEMT DC Characteristics

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al

CSW 2018 Proceedings, p. 183-183

Other conference contribution

2018

0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers

Eunjung Cha, Niklas Wadefalk, Per Ake Nilsson et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (11), p. 4860-4869

Journal article

2017

Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K

Yulung Tang, Niklas Wadefalk, J. Kooi et al

IEEE MTT-S International Microwave Symposium Digest, p. 176-179

Paper in proceeding

2017

Cryogenic LNAs for SKA band 2 to 5

Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al

IEEE MTT-S International Microwave Symposium Digest, p. 164-167

Paper in proceeding

2017

Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs

Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 65 (12), p. 5171-5180

Journal article

2016

Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process

Per-Åke Nilsson, Arsalan Pourkabirian, Joel Schleeh et al

Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. Vol. 1, p. Art. no. 7411746-

Paper in proceeding

2016

Cryogenic low-noise InP HEMTs: A source-drain distance study

Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al

2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-

Paper in proceeding

2015

Probing the quantum vacuum with an artificial atom in front of a mirror

Io Chun Hoi, Anton Frisk Kockum, Lars Tornberg et al

Nature Physics. Vol. 11 (12), p. 1045-1049

Journal article

2014

Probing quantum and classical noise in nano circuits

Arsalan Pourkabirian

Doctoral thesis

2014

Nonequilibrium probing of two-level charge fluctuators using the step response of a single-electron transistor

Arsalan Pourkabirian, Martin Gustafsson, Göran Johansson et al

Physical Review Letters. Vol. 113 (25), p. 256801-

Journal article

2013

Thermal properties of charge noise sources

Martin Gustafsson, Arsalan Pourkabirian, Göran Johansson et al

Physical Review B - Condensed Matter and Materials Physics. Vol. 88 (24), p. Art. no. 245410-

Journal article

2011

Observation of the dynamical Casimir effect in a superconducting circuit

Christopher Wilson, Göran Johansson, Arsalan Pourkabirian et al

Nature. Vol. 479 (7373), p. 376-9

Journal article

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