Arsalan Pourkabirian

Showing 17 publications

2020

III-V HEMTs for cryogenic low noise amplifiers

Jan Grahn, Eunjung Cha, Arsalan Pourkabirian et al
Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2020-December, p. 25.6.1-25.6.4
Paper in proceeding
2020

A 300-mu W Cryogenic HEMT LNA for Quantum Computing

Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti et al
PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), p. 1299-1302
Paper in proceeding
2020

A 300-µW Cryogenic HEMT LNA for Quantum Computing

Eunjung Cha, Niklas Wadefalk, Giuseppe Moschetti et al
IEEE MTT-S International Microwave Symposium Digest. Vol. 2020-August, p. 1299-1302
Paper in proceeding
2019

On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al
AIP Advances. Vol. 9 (8)
Journal article
2019

Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Giuseppe Moschetti et al
IIS UTokyo SYMPOSIUM No.100
Paper in proceeding
2018

0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers

Eunjung Cha, Niklas Wadefalk, Per Ake Nilsson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (11), p. 4860-4869
Journal article
2018

Magnetic Influence on Cryogenic InP HEMT DC Characteristics

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al
Paper in proceeding
2017

Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs

Eunjung Cha, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 65 (12), p. 5171-5180
Journal article
2017

Cryogenic LNAs for SKA band 2 to 5

Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE MTT-S International Microwave Symposium Digest, p. 164-167
Paper in proceeding
2017

Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K

Yulung Tang, Niklas Wadefalk, J. Kooi et al
IEEE MTT-S International Microwave Symposium Digest, p. 176-179
Paper in proceeding
2016

Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process

Per-Åke Nilsson, Arsalan Pourkabirian, Joel Schleeh et al
Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. Vol. 1, p. Art. no. 7411746-
Paper in proceeding
2016

Cryogenic low-noise InP HEMTs: A source-drain distance study

Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al
2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-
Paper in proceeding
2015

Probing the quantum vacuum with an artificial atom in front of a mirror

Io Chun Hoi, Anton Frisk Kockum, Lars Tornberg et al
Nature Physics. Vol. 11 (12), p. 1045-1049
Journal article
2014

Probing quantum and classical noise in nano circuits

Arsalan Pourkabirian
Doctoral thesis
2014

Nonequilibrium probing of two-level charge fluctuators using the step response of a single-electron transistor

Arsalan Pourkabirian, Martin Gustafsson, Göran Johansson et al
Physical Review Letters. Vol. 113 (25), p. 256801-
Journal article
2013

Thermal properties of charge noise sources

Martin Gustafsson, Arsalan Pourkabirian, Göran Johansson et al
Physical Review B - Condensed Matter and Materials Physics. Vol. 88 (24), p. Art. no. 245410-
Journal article
2011

Observation of the dynamical Casimir effect in a superconducting circuit

Christopher Wilson, Göran Johansson, Arsalan Pourkabirian et al
Nature. Vol. 479 (7373), p. 376-9
Journal article

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