Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
Paper in proceeding, 2016
An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogenic temperatures. The process was run on 4” wafers and utilized 130 nm gate-length HEMTs. Several wide band LNAs were made in a frequency range between 1 GHz and 100 GHz. A Ka band LNA had a minimum noise temperature of 10 K and a gain of 35 dB.
Author
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Arsalan Pourkabirian
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Joel Schleeh
Low Noise Factory AB
Niklas Wadefalk
Low Noise Factory AB
Piotr Starski
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Göran Alestig
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
John Halonen
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Bengt Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015
Vol. 1 Art. no. 7411746-
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Nano Technology
Other Electrical Engineering, Electronic Engineering, Information Engineering
Infrastructure
Nanofabrication Laboratory
DOI
10.1109/APMC.2015.7411746