Joel Schleeh

Publications (31)
Projects (0)

Showing 31 publications

2019

On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian et al

AIP Advances. Vol. 9 (8)

Journal article

2019

Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field

Isabel Harrysson Rodrigues, David Niepce, Giuseppe Moschetti et al

IIS UTokyo SYMPOSIUM No.100

Paper in proceeding

2019

Low Power Cryogenic Rad-hard LNAs for Space

Christina Emrich, Peter Sobis, Niklas Wadefalk et al

Paper in proceeding

2019

A 183-GHz Schottky diode receiver with 4 dB noise figure

Martin Anderberg, Peter Sobis, Vladimir Drakinskiy et al

IEEE MTT-S International Microwave Symposium Digest. Vol. 2019-June, p. 172-175

Paper in proceeding

2018

Low noise 874 GHz receivers for the international submillimetre airborne radiometer (ISMAR)

Arvid Hammar, Peter Sobis, Vladimir Drakinskiy et al

Review of Scientific Instruments. Vol. 89 (5)

Journal article

2018

0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers

Eunjung Cha, Niklas Wadefalk, Per Ake Nilsson et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (11), p. 4860-4869

Journal article

2018

Magnetic Influence on Cryogenic InP HEMT DC Characteristics

Isabel Harrysson Rodrigues, Arsalan Pourkabirian, Giuseppe Moschetti et al

CSW 2018 Proceedings, p. 183-183

Other conference contribution

2017

Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

M. A. McCulloch, Jan Grahn, S. J. Melhuish et al

Journal of Astronomical Telescopes, Instruments, and Systems. Vol. 3 (1)

Journal article

2017

Cryogenic LNAs for SKA band 2 to 5

Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al

IEEE MTT-S International Microwave Symposium Digest, p. 164-167

Paper in proceeding

2017

Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K

Yulung Tang, Niklas Wadefalk, J. Kooi et al

IEEE MTT-S International Microwave Symposium Digest, p. 176-179

Paper in proceeding

2016

10 K Room Temperature LNA for SKA Band 1

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al

IEEE MTT-S International Microwave Symposium Digest. Vol. 2016 - August, p. Art no 7540344-

Paper in proceeding

2016

Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process

Per-Åke Nilsson, Arsalan Pourkabirian, Joel Schleeh et al

Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. Vol. 1, p. Art. no. 7411746-

Paper in proceeding

2016

Cryogenic low-noise InP HEMTs: A source-drain distance study

Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al

2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-

Paper in proceeding

2015

Cryogenic Kink Effect in InP pHEMTs: A Pulsed Measurements Study

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al

IEEE Transactions on Electron Devices. Vol. 62 (2), p. 532-537

Journal article

2015

SWI 1200/600 GHz highly integrated receiver front-ends

Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al

36th ESA Antenna Workshop on Antennas and RF Systems for Space Science, ESA/ESTEC ,Noordwijk, The Netherlands; 6-9 Oct. 2015. Vol. session S3.1.2

Paper in proceeding

2015

Phonon black-body radiation limit for heat dissipation in electronics

Joel Schleeh, J. Mateos, Ignacio Íñiguez-De-La-Torre et al

Nature Materials. Vol. 14 (2), p. 187-192

Journal article

2014

Cryogenic noise performance of InGAAs/InAlAs HEMTs grown on InP and GaAs substrate

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al

Solid-State Electronics. Vol. 91, p. 74-77

Journal article

2014

Low noise GaAs Schottky TMIC and InP HEMT MMIC based Receivers for the ISMAR and SWI Instruments

Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al

ESA Workshop on Micro and Millimetre Wave Technology and Techniques, Estec, the Netherlands

Paper in proceeding

2014

An InP MMIC process optimized for low noise at Cryo

Per-Åke Nilsson, Joel Schleeh, Niklas Wadefalk et al

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Paper in proceeding

2014

Multiplicative and Additive Low-Frequency Noise in Microwave Transistors

S. Weinreb, Joel Schleeh

IEEE Transactions on Microwave Theory and Techniques. Vol. 62 (1), p. 83-91

Journal article

2013

Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al

IEEE Transactions on Electron Devices. Vol. 60 (5), p. 1625-1631

Journal article

2013

Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al

2013 International Conference on Indium Phosphide and Related Materials

Paper in proceeding

2013

Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al

IEEE Transactions on Electron Devices. Vol. 60 (1), p. 206-212

Journal article

2013

Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al

IEEE Transactions on Microwave Theory and Techniques. Vol. 61 (2), p. 871-877

Journal article

2013

Influence of gate-channel distance in low-noise InP HEMTs

Per-Åke Nilsson, Helena Rodilla, Joel Schleeh et al

2013 International Conference on Indium Phosphide and Related Materials

Paper in proceeding

2013

Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors

Joel Schleeh

Doctoral thesis

2012

Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al

IEEE MTT-S International Microwave Symposium Digest

Paper in proceeding

2012

Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Joel Schleeh, Göran Alestig, John Halonen et al

IEEE Electron Device Letters. Vol. 33 (5), p. 664-666

Journal article

2012

Ultra-Low Noise InP HEMTs for Cryogenic Amplification

Joel Schleeh

Licentiate thesis

2012

Optimized InP HEMTs for low noise at cryogenic temperatures

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al

24th International Conference on Indium Phosphide & Related Materials (IPRM), p. 241-244

Paper in proceeding

2011

Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition

Joel Schleeh, John Halonen, Bengt Nilsson et al

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011

Paper in proceeding

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