Joel Schleeh
Showing 28 publications
2019
Low Power Cryogenic Rad-hard LNAs for Space
Christina Emrich, Peter Sobis, Niklas Wadefalk et al
Paper in proceedings
2019
A 183-GHz Schottky diode receiver with 4 dB noise figure
Martin Anderberg, Peter Sobis, Vladimir Drakinskiy et al
IEEE MTT-S International Microwave Symposium Digest, p. 172-175
Paper in proceedings
2018
Low noise 874 GHz receivers for the international submillimetre airborne radiometer (ISMAR)
Arvid Hammar, Peter Sobis, Vladimir Drakinskiy et al
Review of Scientific Instruments. Vol. 89 (5)
Journal article
2018
0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers
Eunjung Cha, Niklas Wadefalk, Per Ake Nilsson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (11), p. 4860-4869
Journal article
2017
Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers
M. A. McCulloch, Jan Grahn, S. J. Melhuish et al
Journal of Astronomical Telescopes, Instruments, and Systems. Vol. 3 (1)
Journal article
2017
Cryogenic LNAs for SKA band 2 to 5
Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE MTT-S International Microwave Symposium Digest, p. 164-167
Paper in proceedings
2017
Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K
Yulung Tang, Niklas Wadefalk, J. Kooi et al
IEEE MTT-S International Microwave Symposium Digest, p. 176-179
Paper in proceedings
2016
10 K Room Temperature LNA for SKA Band 1
Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE MTT-S International Microwave Symposium Digest. Vol. 2016 - August, p. Art no 7540344-
Paper in proceedings
2016
Cryogenic low-noise InP HEMTs: A source-drain distance study
Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al
2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-
Paper in proceedings
2015
Cryogenic Kink Effect in InP pHEMTs: A Pulsed Measurements Study
Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al
IEEE Transactions on Electron Devices. Vol. 62 (2), p. 532-537
Journal article
2015
SWI 1200/600 GHz highly integrated receiver front-ends
Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al
36th ESA Antenna Workshop on Antennas and RF Systems for Space Science, ESA/ESTEC ,Noordwijk, The Netherlands; 6-9 Oct. 2015. Vol. session S3.1.2
Paper in proceedings
2015
Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
Per-Åke Nilsson, Arsalan Pourkabirian, Joel Schleeh et al
Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. Vol. 1, p. Art. no. 7411746-
Paper in proceedings
2015
Phonon black-body radiation limit for heat dissipation in electronics
Joel Schleeh, J. Mateos, Ignacio Íñiguez-De-La-Torre et al
Nature Materials. Vol. 14 (2), p. 187-192
Journal article
2014
Cryogenic noise performance of InGAAs/InAlAs HEMTs grown on InP and GaAs substrate
Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al
Solid-State Electronics. Vol. 91, p. 74-77
Journal article
2014
Low noise GaAs Schottky TMIC and InP HEMT MMIC based Receivers for the ISMAR and SWI Instruments
Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al
ESA Workshop on Micro and Millimetre Wave Technology and Techniques, Estec, the Netherlands
Paper in proceedings
2014
An InP MMIC process optimized for low noise at Cryo
Per-Åke Nilsson, Joel Schleeh, Niklas Wadefalk et al
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Paper in proceedings
2014
Multiplicative and Additive Low-Frequency Noise in Microwave Transistors
S. Weinreb, Joel Schleeh
IEEE Transactions on Microwave Theory and Techniques. Vol. 62 (1), p. 83-91
Journal article
2013
Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study
Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al
IEEE Transactions on Electron Devices. Vol. 60 (5), p. 1625-1631
Journal article
2013
Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT
Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al
2013 International Conference on Indium Phosphide and Related Materials
Paper in proceedings
2013
Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs
Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al
IEEE Transactions on Electron Devices. Vol. 60 (1), p. 206-212
Journal article
2013
Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications
Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 61 (2), p. 871-877
Journal article
2013
Influence of gate-channel distance in low-noise InP HEMTs
Per-Åke Nilsson, Helena Rodilla, Joel Schleeh et al
2013 International Conference on Indium Phosphide and Related Materials
Paper in proceedings
2012
Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE MTT-S International Microwave Symposium Digest
Paper in proceedings
2012
Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
Joel Schleeh, Göran Alestig, John Halonen et al
IEEE Electron Device Letters. Vol. 33 (5), p. 664-666
Journal article
2012
Optimized InP HEMTs for low noise at cryogenic temperatures
Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al
24th International Conference on Indium Phosphide & Related Materials (IPRM), p. 241-244
Paper in proceedings
2011
Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition
Joel Schleeh, John Halonen, Bengt Nilsson et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011
Paper in proceedings
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