Joel Schleeh

Showing 28 publications

2019

Low Power Cryogenic Rad-hard LNAs for Space

Christina Emrich, Peter Sobis, Niklas Wadefalk et al
Paper in proceedings
2019

A 183-GHz Schottky diode receiver with 4 dB noise figure

Martin Anderberg, Peter Sobis, Vladimir Drakinskiy et al
IEEE MTT-S International Microwave Symposium Digest, p. 172-175
Paper in proceedings
2018

Low noise 874 GHz receivers for the international submillimetre airborne radiometer (ISMAR)

Arvid Hammar, Peter Sobis, Vladimir Drakinskiy et al
Review of Scientific Instruments. Vol. 89 (5)
Journal article
2018

0.3-14 and 16-28 GHz Wide-Bandwidth Cryogenic MMIC Low-Noise Amplifiers

Eunjung Cha, Niklas Wadefalk, Per Ake Nilsson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 66 (11), p. 4860-4869
Journal article
2017

Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

M. A. McCulloch, Jan Grahn, S. J. Melhuish et al
Journal of Astronomical Telescopes, Instruments, and Systems. Vol. 3 (1)
Journal article
2017

Cryogenic LNAs for SKA band 2 to 5

Joel Schleeh, Giuseppe Moschetti, Niklas Wadefalk et al
IEEE MTT-S International Microwave Symposium Digest, p. 164-167
Paper in proceedings
2017

Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K

Yulung Tang, Niklas Wadefalk, J. Kooi et al
IEEE MTT-S International Microwave Symposium Digest, p. 176-179
Paper in proceedings
2016

10 K Room Temperature LNA for SKA Band 1

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE MTT-S International Microwave Symposium Digest. Vol. 2016 - August, p. Art no 7540344-
Paper in proceedings
2016

Cryogenic low-noise InP HEMTs: A source-drain distance study

Eunjung Cha, Arsalan Pourkabirian, Joel Schleeh et al
2016 Compound Semiconductor Week, CSW 2016, p. Article number 7528576-
Paper in proceedings
2015

Cryogenic Kink Effect in InP pHEMTs: A Pulsed Measurements Study

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al
IEEE Transactions on Electron Devices. Vol. 62 (2), p. 532-537
Journal article
2015

SWI 1200/600 GHz highly integrated receiver front-ends

Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al
36th ESA Antenna Workshop on Antennas and RF Systems for Space Science, ESA/ESTEC ,Noordwijk, The Netherlands; 6-9 Oct. 2015. Vol. session S3.1.2
Paper in proceedings
2015

Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process

Per-Åke Nilsson, Arsalan Pourkabirian, Joel Schleeh et al
Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. Vol. 1, p. Art. no. 7411746-
Paper in proceedings
2015

Phonon black-body radiation limit for heat dissipation in electronics

Joel Schleeh, J. Mateos, Ignacio Íñiguez-De-La-Torre et al
Nature Materials. Vol. 14 (2), p. 187-192
Journal article
2014

Cryogenic noise performance of InGAAs/InAlAs HEMTs grown on InP and GaAs substrate

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al
Solid-State Electronics. Vol. 91, p. 74-77
Journal article
2014

Low noise GaAs Schottky TMIC and InP HEMT MMIC based Receivers for the ISMAR and SWI Instruments

Peter Sobis, Vladimir Drakinskiy, Niklas Wadefalk et al
ESA Workshop on Micro and Millimetre Wave Technology and Techniques, Estec, the Netherlands
Paper in proceedings
2014

An InP MMIC process optimized for low noise at Cryo

Per-Åke Nilsson, Joel Schleeh, Niklas Wadefalk et al
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Paper in proceedings
2014

Multiplicative and Additive Low-Frequency Noise in Microwave Transistors

S. Weinreb, Joel Schleeh
IEEE Transactions on Microwave Theory and Techniques. Vol. 62 (1), p. 83-91
Journal article
2013

Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al
IEEE Transactions on Electron Devices. Vol. 60 (5), p. 1625-1631
Journal article
2013

Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al
2013 International Conference on Indium Phosphide and Related Materials
Paper in proceedings
2013

Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs

Joel Schleeh, Helena Rodilla, Niklas Wadefalk et al
IEEE Transactions on Electron Devices. Vol. 60 (1), p. 206-212
Journal article
2013

Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE Transactions on Microwave Theory and Techniques. Vol. 61 (2), p. 871-877
Journal article
2013

Influence of gate-channel distance in low-noise InP HEMTs

Per-Åke Nilsson, Helena Rodilla, Joel Schleeh et al
2013 International Conference on Indium Phosphide and Related Materials
Paper in proceedings
2012

Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature

Joel Schleeh, Niklas Wadefalk, Per-Åke Nilsson et al
IEEE MTT-S International Microwave Symposium Digest
Paper in proceedings
2012

Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Joel Schleeh, Göran Alestig, John Halonen et al
IEEE Electron Device Letters. Vol. 33 (5), p. 664-666
Journal article
2012

Ultra-Low Noise InP HEMTs for Cryogenic Amplification

Joel Schleeh
Licentiate thesis
2012

Optimized InP HEMTs for low noise at cryogenic temperatures

Helena Rodilla, Joel Schleeh, Per-Åke Nilsson et al
24th International Conference on Indium Phosphide & Related Materials (IPRM), p. 241-244
Paper in proceedings
2011

Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition

Joel Schleeh, John Halonen, Bengt Nilsson et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011
Paper in proceedings

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