An InP MMIC process optimized for low noise at Cryo
Paper in proceeding, 2014
An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.
MMIC
InP HEMT
Low noise amplifier (LNA)
Cryogenic
Author
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Joel Schleeh
Niklas Wadefalk
Piotr Starski
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Helena Rodilla
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Göran Alestig
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
John Halonen
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Bengt Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
1550-8781 (ISSN)
9781479936229 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/CSICS.2014.6978542
ISBN
9781479936229