An InP MMIC process optimized for low noise at Cryo
Paper in proceedings, 2014

An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.

MMIC

InP HEMT

Low noise amplifier (LNA)

Cryogenic

Author

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Wadefalk

Piotr Starski

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Helena Rodilla

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Göran Alestig

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

John Halonen

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Bengt Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

1550-8781 (ISSN)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/CSICS.2014.6978542

ISBN

9781479936229

More information

Created

10/7/2017