John Halonen
Research Engineer
Showing 7 publications
Cryogenic LNAs for SKA band 2 to 5
Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process
Cryogenic low-noise InP HEMTs: A source-drain distance study
An InP MMIC process optimized for low noise at Cryo
Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition
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