Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
Paper in proceeding, 2012
InGaAs
Cryogenic
Bandwidth
Low noise amplifier (LNA)
HEMT
Author
Joel Schleeh
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Wadefalk
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Piotr Starski
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Göran Alestig
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
John Halonen
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Bengt Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Anna Malmros
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
6259542978-146731087-1 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/MWSYM.2012.6259542
ISBN
978-146731087-1