Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
Paper in proceedings, 2012

A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP HEMT process. A packaged LNA has been measured at both 300 K and 15 K. At 300 K the measured minimum noise temperature was 48 K at 7 GHz. At 15 K the measured minimum noise temperature was 3 K at 7 GHz and below 7 K within the entire 0.5-13 GHz band. The gain was between 34 dB and 40 dB at 300 K and between 38 dB and 44 dB at 4 K.

InGaAs

Cryogenic

Bandwidth

Low noise amplifier (LNA)

HEMT

Author

Joel Schleeh

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Wadefalk

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Piotr Starski

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Göran Alestig

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

John Halonen

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Bengt Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Anna Malmros

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

6259542

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/MWSYM.2012.6259542

ISBN

978-146731087-1

More information

Created

10/7/2017