Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature
Paper in proceeding, 2012
A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP HEMT process. A packaged LNA has been measured at both 300 K and 15 K. At 300 K the measured minimum noise temperature was 48 K at 7 GHz. At 15 K the measured minimum noise temperature was 3 K at 7 GHz and below 7 K within the entire 0.5-13 GHz band. The gain was between 34 dB and 40 dB at 300 K and between 38 dB and 44 dB at 4 K.
InGaAs
Cryogenic
Bandwidth
Low noise amplifier (LNA)
HEMT
Author
Joel Schleeh
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Wadefalk
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Piotr Starski
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Göran Alestig
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
John Halonen
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Bengt Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Anna Malmros
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
6259542978-146731087-1 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/MWSYM.2012.6259542
ISBN
978-146731087-1